A new electrode structure CdZnTe(Cadmium Zinc Telluride) detector named Binode CdZnTe has been proposed in this paper.Together with the softwares of MAXWELL,GEANT4,and ROOT,the charge collection process and its gamma ...A new electrode structure CdZnTe(Cadmium Zinc Telluride) detector named Binode CdZnTe has been proposed in this paper.Together with the softwares of MAXWELL,GEANT4,and ROOT,the charge collection process and its gamma spectrum of the detector have been simulated and the detector structure has been optimized.In order to improve its performance further,Compton scattering effect correction has been used.The simulation results demonstrate that with refined design and Compton scattering effect correction,Binode CdZnTe detectors is capable of achieving 3.92%FWHM at 122 keV,and 1.27%FWHM at 662 keV.Compared with other single-polarity(electron-only) detector configurations,Binode CdZnTe detector offers a cost effective and simple structure alternative with comparable energy resolution.展开更多
杂质是影响碲镉汞器件性能的重要因素之一。对于碲锌镉衬底晶体和窄禁带碲镉汞材料来说,杂质的影响更加显著。主要论述了碲镉汞材料中常见的杂质类型以及杂质在材料中的作用,并分析了影响器件性能的主要杂质。采用辉光放电质谱法(Glow D...杂质是影响碲镉汞器件性能的重要因素之一。对于碲锌镉衬底晶体和窄禁带碲镉汞材料来说,杂质的影响更加显著。主要论述了碲镉汞材料中常见的杂质类型以及杂质在材料中的作用,并分析了影响器件性能的主要杂质。采用辉光放电质谱法(Glow Discharge Mass Spectrometry,GDMS)测试了材料中的杂质含量,同时通过改进的区熔工艺降低了碲锌镉衬底及液相外延生长的碲镉汞薄膜材料中的杂质含量,提高了碲镉汞薄膜的电学性能,从而满足高性能碲镉汞红外探测器的制备要求。展开更多
文摘A new electrode structure CdZnTe(Cadmium Zinc Telluride) detector named Binode CdZnTe has been proposed in this paper.Together with the softwares of MAXWELL,GEANT4,and ROOT,the charge collection process and its gamma spectrum of the detector have been simulated and the detector structure has been optimized.In order to improve its performance further,Compton scattering effect correction has been used.The simulation results demonstrate that with refined design and Compton scattering effect correction,Binode CdZnTe detectors is capable of achieving 3.92%FWHM at 122 keV,and 1.27%FWHM at 662 keV.Compared with other single-polarity(electron-only) detector configurations,Binode CdZnTe detector offers a cost effective and simple structure alternative with comparable energy resolution.
文摘杂质是影响碲镉汞器件性能的重要因素之一。对于碲锌镉衬底晶体和窄禁带碲镉汞材料来说,杂质的影响更加显著。主要论述了碲镉汞材料中常见的杂质类型以及杂质在材料中的作用,并分析了影响器件性能的主要杂质。采用辉光放电质谱法(Glow Discharge Mass Spectrometry,GDMS)测试了材料中的杂质含量,同时通过改进的区熔工艺降低了碲锌镉衬底及液相外延生长的碲镉汞薄膜材料中的杂质含量,提高了碲镉汞薄膜的电学性能,从而满足高性能碲镉汞红外探测器的制备要求。
