The capacitance-voltage characteristics of AIGaN/GaN high-electron-mobility transistors （HEMTS） are measured in the temperature range of 223-398K. The dependence of capacitance on frequency at various temperatures i...The capacitance-voltage characteristics of AIGaN/GaN high-electron-mobility transistors （HEMTS） are measured in the temperature range of 223-398K. The dependence of capacitance on frequency at various temperatures is analyzed. At lower temperatures, the capacitance decreases only very slightly with frequency. At higher frequencies the curves for all temperatures tend to one capacitance value. Such behavior can be attributed to the interface states or the dislocations.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 60976059 and 61106074the National Basic Research Program of China under Grant No 2011CB301704
文摘The capacitance-voltage characteristics of AIGaN/GaN high-electron-mobility transistors （HEMTS） are measured in the temperature range of 223-398K. The dependence of capacitance on frequency at various temperatures is analyzed. At lower temperatures, the capacitance decreases only very slightly with frequency. At higher frequencies the curves for all temperatures tend to one capacitance value. Such behavior can be attributed to the interface states or the dislocations.
