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THE IMPROVEMENT OF ELECTRON FIELD EMISSION FROM AMORPHOUS CARBON FILMS DUE TO HYDROGEN PLASMA CHEMICAL ANNEALING EFFECT 被引量:15
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作者 J. Xu, X.H. Huang, L. Wang, W. Li and K.J. Chen (National Laboratory of Solid State Microstructures and Departmeat of Physics, Nanjing University, Nanjing 210093, China) J.B. Xu (Department of Electronic Engineering, The Chinese University of Hong Kong, S 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2001年第6期497-500,共4页
Hydrogenated amorphous carbon films were fabricated by using layer-by-layer deposition method and hydrogen dilution method in a small d.c.-assisted plasma enhanced chemical vapor deposition system. It was found that t... Hydrogenated amorphous carbon films were fabricated by using layer-by-layer deposition method and hydrogen dilution method in a small d.c.-assisted plasma enhanced chemical vapor deposition system. It was found that the hydrogen plasma treatment could change the sp2/sp3 ratio to some extent by chemical etching. The improvements of field emission characteristics were observed compared with that from conventionally deposited a-C films, which can be attributed to the large field enhancement effect due to the inhomogeneous distribution of nanometer scale sp2 clusters and the reduction of the surface emission barrier due to the hydrogen termination. 展开更多
关键词 field emission amorphous carbon hydrogen plasma treatment
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Simple method to rapidly fabricate chain-like carbon nanotube films and its field emission properties 被引量:2
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作者 Zhi-yuan Wu Shuang-qi Hu Zhi-qian Wang 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2010年第3期371-375,共5页
A simple process to fabricate chain-like carbon nanotube (CNT) films by microwave plasma-enhanced chemical vapor deposition (MPCVD) was developed successfully. Prior to deposition, the Ti/Al2O3 substrates were gro... A simple process to fabricate chain-like carbon nanotube (CNT) films by microwave plasma-enhanced chemical vapor deposition (MPCVD) was developed successfully. Prior to deposition, the Ti/Al2O3 substrates were ground with Fe-doped SiO2 powder. The nano-structure of the deposited films was analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The field electron emission characteristics of the chain-like carbon nanotube films were measured under the vacuum of 10-5 Pa. The low turn-on field of 0.80 V/μm and the emission current density of 8.5 mA/cm2 at the electric field of 3.0 V/μm are obtained. Based on the above results, chain-like carbon nanotube films probably have important applications in cold cathode materials and electrode materials. 展开更多
关键词 carbon nanotube (CNT) CHAIN-LIKE film microwave plasma-enhanced chemical vapor deposition (MPCVD) field emission
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The effects of a static magnetic field on the microwave absorption of hydrogen plasma in carbon nanotubes: a numerical study 被引量:1
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作者 彭志华 龚学余 +2 位作者 彭延峰 郭燕春 宁艳桃 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第7期541-545,共5页
We theoretically investigate the microwave absorption properties of hydrogen plasma in iron-catalyzed high- pressure disproportionation-grown carbon nanotubes under an external static magnetic field in the frequency r... We theoretically investigate the microwave absorption properties of hydrogen plasma in iron-catalyzed high- pressure disproportionation-grown carbon nanotubes under an external static magnetic field in the frequency range 0.3 GHz to 30 GHz, using the Maxwell equations in conjunction with a general expression for the effective complex permittivity of magnetized plasma known as the Appleton Hartree formula. The effects of the external static magnetic field intensity and the incident microwave propagation direction on the microwave absorption of hydrogen plasma in CNTs are studied in detail. The numerical results indicate that the microwave absorption properties of hydrogen plasma in iron-catalyzed high-pressure disproportionation-grown carbon nanotubes can be obviously improved when the exter- nal static magnetic field is applied to the material. It is found that the specified frequency microwave can be strongly absorbed by the hydrogen plasma in iron-catalyzed high-pressure disproportionation-grown carbon nanotubes over a wide range of incidence angles by adjusting the external magnetic field intensity and the parameters of the hydrogen plasma. 展开更多
关键词 carbon nanotubes hydrogen plasma static magnetic field microwave absorption
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Parallel processing via carbon field emission-based controlled switching of regular bijective nano systolic networks,part 1:basics
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作者 Anas N.Al-Rabadi 《International Journal of Intelligent Computing and Cybernetics》 EI 2016年第3期274-297,共24页
Purpose-The purpose of this paper is to introduce new implementations for parallel processing applications using bijective systolic networks and the corresponding carbon-based field emission controlled switching.The d... Purpose-The purpose of this paper is to introduce new implementations for parallel processing applications using bijective systolic networks and the corresponding carbon-based field emission controlled switching.The developed implementations are performed in the reversible domain to perform the required bijective parallel computing,where the implementations for parallel computations that utilize the presented field-emission controlled switching and their corresponding m-ary(many-valued)extensions for the use in nano systolic networks are introduced.The first part of the paper presents important fundamentals with regards to systolic computing and carbon-based field emission that will be utilized in the implementations within the second part of the paper.Design/methodology/approach-The introduced systolic systems utilize recent findings in field emission and nano applications to implement the functionality of the basic bijective systolic network.This includes many-valued systolic computing via field emission techniques using carbon-based nanotubes and nanotips.The realization of bijective logic circuits in current and emerging technologies can be very important for various reasons.The reduction of power consumption is a major requirement for the circuit design in future technologies,and thus,the new nano systolic circuits can play an important role in the design of circuits that consume minimal power for future applications such as in low-power signal processing.In addition,the implemented bijective systems can be utilized to implement massive parallel processing and thus obtaining very high processing performance,where the implementation will also utilize the significant size reduction within the nano domain.The extensions of implementations to field emission-based many-valued systolic networks using the introduced bijective nano systolic architectures are also presented.Findings-Novel bijective systolic architectures using nano-based field emission implementations are introduced in this paper,and the implementation using the general scheme of many-valued computing is presented.The carbon-based field emission implementation of nano systolic networks is also introduced.This is accomplished using the introduced field emission carbon-based devices,where field emission from carbon nanotubes and nano-apex carbon fibers is utilized.The implementations of the many-valued bijective systolic networks utilizing the introduced nano-based architectures are also presented.Originality/value-The introduced bijective systolic implementations form new important directions in the systolic realizations using the newly emerging nano-based technologies.The 2-to-1 multiplexer is a basic building block in“switch logic,”where in switch logic,a logic circuit is realized as a combination of switches rather than a combination of logic gates as in the gate logic,which proves to be less costly in synthesizing multiplexer-based wide variety of modern circuits and systems since nano implementations exist in very compact space where carbon-based devices switch reliably using much less power than silicon-based devices.The introduced implementations for nano systolic computation are new and interesting for the design in future nanotechnologies that require optimal design specifications of minimum power consumption and minimum size layout such as in low-power control of autonomous robots and in the adiabatic low-power very-large-scale-integration circuit design for signal processing applications. 展开更多
关键词 NANOTECHNOLOGY Multiplexing carbon nanotubes Controlled switching Switch logic Systolic networks Reversible logic Bijectivity carbon nanotips field emission Parallel processing
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Parallel processing via carbon field emission-based controlled-switching of regular bijective nano systolic networks,Part II Architectural implementation
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作者 Anas N.Al-Rabadi 《International Journal of Intelligent Computing and Cybernetics》 EI 2016年第4期369-393,共25页
Purpose–The purpose of this paper is to introduce new implementations for parallel processing applications using bijective systolic networks and their corresponding carbon-based field emission controlled switching.Th... Purpose–The purpose of this paper is to introduce new implementations for parallel processing applications using bijective systolic networks and their corresponding carbon-based field emission controlled switching.The developed implementations are performed in the reversible domain to perform the required bijective parallel computing,where the implementations for parallel computations that utilize the presented field-emission controlled switching and their corresponding many-valued(m-ary)extensions for the use in nano systolic networks are introduced.The second part of the paper introduces the implementation of systolic computing using two-to-one controlled switching via carbon-based field emission that were presented in the first part of the paper,and the computational extension to the general case of many-valued(m-ary)systolic networks utilizing many-to-one carbon-based field emission is also introduced.Design/methodology/approach–The introduced systolic systems utilize recent findings in field emission and nano applications to implement the functionality of the basic bijective systolic network.This includes many-valued systolic computing via field-emission techniques using carbon-based nanotubes and nanotips.The realization of bijective logic circuits in current and emerging technologies can be very important for various reasons.The reduction of power consumption is a major requirement for the circuit design in future technologies,and thus,the new nano systolic circuits can play an important role in the design of circuits that consume minimal power for future applications such as in low-power signal processing.In addition,the implemented bijective systems can be utilized to implement massive parallel processing and thus obtaining very high processing performance,where the implementation will also utilize the significant size reduction within the nano domain.The extensions of implementations to field emission-based many-valued systolic networks using the introduced bijective nano systolic architectures are also presented.Findings–Novel bijective systolic architectures using nano-based field emission implementations are introduced in this paper,and the implementation using the general scheme of many-valued computing is presented.The carbon-based field emission implementation of nano systolic networks is also introduced.This is accomplished using the introduced field-emission carbon-based devices,where field emission from carbon nanotubes and nano-apex carbon fibersisutilized.The implementationsof the many-valued bijective systolic networks utilizing the introduced nano-based architectures are also presented.Practical implications–The introduced bijective systolic implementations form new important directions in the systolic realizations using the newly emerging nano-based technologies.The 2-to-1 multiplexer is a basic building block in“switch logic,”where in switch logic,a logic circuit is realized as a combination of switches rather than a combination of logic gates as in the gate logic,which proves to be less costly in synthesizing multiplexer-based wide variety of modern circuits and systems since nano implementations exist in very compact space where carbon-based devices switch reliably using much less power than silicon-based devices.The introduced implementations for nano systolic computation are new and interesting for the design in future nanotechnologies that require optimal design specifications of minimum power consumption and minimum size layout such as in low-power control of autonomous robots and in the adiabatic low-power VLSI circuit design for signal processing applications.Originality/value–The introduced bijective systolic implementations form new important directions in the systolic realizations utilizing the newly emerging nanotechnologies.The introduced implementations for nano systolic computation are new and interesting for the design in future nanotechnologies that require optimal design specifications of high performance,minimum power and minimum size. 展开更多
关键词 Controlled switching carbon nanotubes Systolic networks NANOTECHNOLOGY Multiplexing Reversible logic Bijectivity carbon nanotips field emission Discrete-event dynamic systems Switch logic Parallel processing
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Vacuum Outgassing Behavior of Carbon Nanotube Cathode with High-Intensity Pulsed Electron Emission 被引量:1
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作者 谌怡 张篁 +7 位作者 夏连胜 刘星光 潘海峰 吕璐 杨安民 石金水 章林文 邓建军 《Plasma Science and Technology》 SCIE EI CAS CSCD 2015年第2期129-133,共5页
Experimental investigations on the vacuum outgassing of a carbon nanotube (CNT) cathode with high-intensity pulsed electron emission on a 2 MeV linear induction accelerator injector are presented. Under the 1.60 MV ... Experimental investigations on the vacuum outgassing of a carbon nanotube (CNT) cathode with high-intensity pulsed electron emission on a 2 MeV linear induction accelerator injector are presented. Under the 1.60 MV diode voltage, the CNT cathode could provide 1.67 kA electron beam with the amount of outgassing of about 0.51 Pa.L. It is found that the amount of outgassing, which determines the cathode emission current, depends on the diode voltage and the vacuum. 展开更多
关键词 carbon nanotube cathode vacuum outgassing cathode plasma high-intensityelectron beam plasma-induced field emission
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碳纳米管场致发射中的空间电荷效应 被引量:5
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作者 张强 陈泽祥 +2 位作者 朱炳金 王小菊 于涛 《发光学报》 EI CAS CSCD 北大核心 2008年第3期567-572,共6页
采用微波等离子体化学气相沉积(MWPCVD)方法成功制备以碳纳米管束为单元的场致发射阵列,获得很好的场致发射电流发射特性,在电流密度较大时,发现I-V特性偏离由Fowler-Nordheim公式计算出的结果。采用Electron Beam Simulation(EBS)软件... 采用微波等离子体化学气相沉积(MWPCVD)方法成功制备以碳纳米管束为单元的场致发射阵列,获得很好的场致发射电流发射特性,在电流密度较大时,发现I-V特性偏离由Fowler-Nordheim公式计算出的结果。采用Electron Beam Simulation(EBS)软件进行模拟分析发现:在电流密度较低时,I-V特性能很好与F-N公式吻合。但碳纳米管尖端电流密度大于106A/cm2时,碳纳米管尖端处的有效电场强度受空间电荷的影响比较明显,进而对碳纳米管的场致发射特性显现出不可忽略的影响,此时碳纳米管的发射电流密度开始受到空间电荷的限制。 展开更多
关键词 空间电荷效应 碳纳米管 场致发射 微波等离子体化学气相沉积
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纳米碳管的制备及其场发射性能研究(英文) 被引量:3
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作者 邓周虎 王雪文 +2 位作者 李林 闫军锋 任兆玉 《光子学报》 EI CAS CSCD 北大核心 2007年第2期239-243,共5页
将Ni(NO3)2-Mg(NO3)2体系作为催化剂前驱体,在不同气源比例下用CVD催化裂解法制备纳米碳管,用SEM、TEM和喇曼光谱对其进行了表征和分析,制备出完整性好的纳米碳管.再用两种工艺和配方制备其场发射阴极,对阴极样品进行了场发射性能测试.... 将Ni(NO3)2-Mg(NO3)2体系作为催化剂前驱体,在不同气源比例下用CVD催化裂解法制备纳米碳管,用SEM、TEM和喇曼光谱对其进行了表征和分析,制备出完整性好的纳米碳管.再用两种工艺和配方制备其场发射阴极,对阴极样品进行了场发射性能测试.结果表明,经过氢处理在Si基上制备的CNT阴极发光效果好,且具有良好的场发射性能. 展开更多
关键词 纳米碳管 场发射阴极 氢等离子体表面处理
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微图形定向碳纳米管场发射阵列冷阴极的研究 被引量:12
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作者 陈长青 丁明清 +4 位作者 李兴辉 白国栋 张甫权 冯进军 邵文生 《真空科学与技术学报》 EI CAS CSCD 北大核心 2007年第5期363-366,共4页
本文介绍了一种微图形化碳纳米管场发射阵列冷阴极,每个图形的直径仅为1μm,构成一个发射单元。制作工艺如下:首先在硅(100)基片上沉积氮化钛缓冲层,然后采用曝光工艺获得直径为1μm的胶孔阵列,沉积催化剂铁,最后采用直流等离子体增强... 本文介绍了一种微图形化碳纳米管场发射阵列冷阴极,每个图形的直径仅为1μm,构成一个发射单元。制作工艺如下:首先在硅(100)基片上沉积氮化钛缓冲层,然后采用曝光工艺获得直径为1μm的胶孔阵列,沉积催化剂铁,最后采用直流等离子体增强化学气相沉积(DC-PECVD)生长直立的碳纳米管。并对17500个发射单元的阵列阴极进行了表面形貌表征及场发射特性测试。结果表明,碳纳米管阵列阴极的一致性较好;最低开启电场为1 V/μm;电场为17 V/μm时,测得的电流密度已达到90 mA/cm2;发射电流为550μA时,在2.5 h内的波动小于5.6%。 展开更多
关键词 微图形 定向碳纳米管 场发射阵列冷阴极 直流等离子体增强化学气相沉积
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碳纳米管应用研究现状与进展 被引量:30
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作者 姜靖雯 彭峰 《材料科学与工程学报》 CAS CSCD 北大核心 2003年第3期464-468,共5页
本文综述了近年来碳纳米管在场发射、分子电子器件、复合增强材料、超级电容器、储氢材料、催化剂材料、锂离子充电电池电极材料等方面应用研究的现状与进展 ;
关键词 碳纳米管 应用 研究现状 电学性能 应用 场致发射 电子器件 力学性能 储氢材料 催化剂 锂离子充电电池 电极材料
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强流碳纳米管阴极快脉冲重频发射特性 被引量:2
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作者 向飞 吴平 +3 位作者 曾凡光 王淦平 李春霞 鞠炳全 《物理学报》 SCIE EI CAS CSCD 北大核心 2015年第16期219-224,共6页
在Cu基底上,采用催化热解生长法制备了石墨化程度较高的碳纳米管阴极.当电子束能量达到1 Me V、梯度约为60 k V/ns时,发射束流强度达到15 k A,相应密度约为1 k A/cm2,束压、束流响应快,波形间几无延时.以50 Hz重复频率、约15 GW束功率... 在Cu基底上,采用催化热解生长法制备了石墨化程度较高的碳纳米管阴极.当电子束能量达到1 Me V、梯度约为60 k V/ns时,发射束流强度达到15 k A,相应密度约为1 k A/cm2,束压、束流响应快,波形间几无延时.以50 Hz重复频率、约15 GW束功率强流发射时,波形稳定,随着频率增高,稳定性降低.发射炮次达1000后,表面形貌保持完整、界面无脱附;束压与束流基本满足空间电荷限制定律,发射机理属闪络型等离子体发射,等离子体速度约为3.9 cm/μs. 展开更多
关键词 碳纳米管阴极 重复频率 场致发射 等离子体速度
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强流碳纳米管阴极重复频率发射特性 被引量:2
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作者 向飞 曾凡光 +3 位作者 王淦平 李春霞 麻华丽 鞠炳全 《强激光与粒子束》 EI CAS CSCD 北大核心 2014年第6期285-288,共4页
采用钛氰铁高温催化热解方法可制备发射性能优异的碳纳米管薄膜阴极。当脉冲电场峰值达到30 MV/m时,发射电流密度达kA/cm2以上,对应相对论电子束流强度高达15 kA,等离子体发射机制参与电子束发射过程。以重复频率10 Hz发射模式时,其发... 采用钛氰铁高温催化热解方法可制备发射性能优异的碳纳米管薄膜阴极。当脉冲电场峰值达到30 MV/m时,发射电流密度达kA/cm2以上,对应相对论电子束流强度高达15 kA,等离子体发射机制参与电子束发射过程。以重复频率10 Hz发射模式时,其发射阈值低,束压、束流波形跟随性好,发射稳定性优于石墨阴极。发射发次达到1000后,碳纳米管形态依然完整,界面无脱附。 展开更多
关键词 碳纳米管阴极 重复频率 场致发射 等离子体发射
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铜基碳纳米管复合电镀辅助工艺的对比研究 被引量:3
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作者 赵海涛 陈吉安 +1 位作者 范振民 王全保 《电镀与环保》 CAS CSCD 北大核心 2012年第1期12-14,共3页
铜基碳纳米管复合电镀是制备场发射阴极的极佳工艺。基于铜基碳纳米管的复合电镀技术,对比研究了不同辅助工艺对复合镀层质量的影响,包括机械搅拌、空气搅拌、阴极移动、超声波振荡、间歇超声波振荡。使用机械类辅助工艺,镀液振动较小,... 铜基碳纳米管复合电镀是制备场发射阴极的极佳工艺。基于铜基碳纳米管的复合电镀技术,对比研究了不同辅助工艺对复合镀层质量的影响,包括机械搅拌、空气搅拌、阴极移动、超声波振荡、间歇超声波振荡。使用机械类辅助工艺,镀液振动较小,镀层上的碳纳米管较多,但团聚的也多;使用超声波类辅助工艺,镀液振动较大,镀层上的碳纳米管较少,基本无团聚现象。两大类辅助工艺应联合使用,控制合适的间歇振荡时间是获得碳纳米管数量多、分散性高的复合镀层的关键。 展开更多
关键词 场发射阴极 碳纳米管 复合电镀 辅助工艺 间歇超声波振荡
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电泳沉积碳纳米管的微波等离子体改性 被引量:3
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作者 秦玉香 胡明 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2008年第3期515-518,共4页
采用电泳法在Si基底上沉积了碳纳米管(CNTs)薄膜,并利用Ar微波等离子体对CNTs薄膜进行了改性处理,研究了改性前后CNTs的微观结构和场发射性能.高分辨透射电子显微镜(HRTEM)和拉曼光谱的表征结果表明,等离子体改性明显改变了CNTs的微观结... 采用电泳法在Si基底上沉积了碳纳米管(CNTs)薄膜,并利用Ar微波等离子体对CNTs薄膜进行了改性处理,研究了改性前后CNTs的微观结构和场发射性能.高分辨透射电子显微镜(HRTEM)和拉曼光谱的表征结果表明,等离子体改性明显改变了CNTs的微观结构,形成了大量的管壁结构缺陷、纳米级突起和"针形"尖端;场发射测试结果表明,CNTs经Ar等离子体改性处理后开启电场较改性前略有增大,等离子体改性10min的CNTs薄膜表现出最佳的场发射J—E特性,阈值电场由改性前的3.12V/μm降低到2.54V/μm,当电场强度为3.3V/μm时,场发射电流密度由改性前的18.4mA/cm^2增大到60.7mA/cm^2.对Ar微波等离子体改性增强CNTs薄膜场发射性能的机理进行了分析. 展开更多
关键词 碳纳米管 电泳沉积 等离子体改性 场发射
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氢等离子体处理——一种有效提高碳纳米管场发射性能的方法 被引量:1
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作者 张继华 冯涛 +2 位作者 于伟东 王曦 柳湘怀 《光散射学报》 2003年第1期6-9,共4页
研究了经氢等离子体处理后多壁碳纳米管的场发射性能。测量了处理前后样品的电流电压特性和表面形貌。结果表明经氢等离子体处理后,发射性能明显改善,发射点密度由未经处理的104/cm2提高到106/cm2。发现了一种新的碳纳米管结构,称之为... 研究了经氢等离子体处理后多壁碳纳米管的场发射性能。测量了处理前后样品的电流电压特性和表面形貌。结果表明经氢等离子体处理后,发射性能明显改善,发射点密度由未经处理的104/cm2提高到106/cm2。发现了一种新的碳纳米管结构,称之为多结的碳纳米管,并讨论了样品发射性能提高的可能机理。这种处理提供了一种有效提高发射点密度和基于碳纳米管的平板显示器性能的方法,非常适用于低成本大面积场发射阴极的制作。 展开更多
关键词 碳纳米管 场发射性能 氢等离子体处理 电流电压特性 表面形貌 场发射阴极
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电泳淀积三极管结构的碳纳米管场发射显示阴极(英文) 被引量:1
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作者 吕文辉 宋航 +6 位作者 李志明 赵辉 曹连振 赵海峰 蒋红 缪国庆 金亿鑫 《电子器件》 CAS 2008年第1期48-51,共4页
本研究探索了一种电泳选域组装碳纳米管发射器到正栅极结构的衬底中作为三极管结构的场发射显示阴极的工艺。在这个工艺中,悬浊液中的碳纳米管在施加于栅极电极和阴极电极的电压的作用下移向并淀积到三极管结构的衬底中。同时,这个栅极... 本研究探索了一种电泳选域组装碳纳米管发射器到正栅极结构的衬底中作为三极管结构的场发射显示阴极的工艺。在这个工艺中,悬浊液中的碳纳米管在施加于栅极电极和阴极电极的电压的作用下移向并淀积到三极管结构的衬底中。同时,这个栅极电极的正电压能够排斥悬浊的碳纳米管,使栅极电极不吸附碳纳米管。实验结果表明,碳纳米管选域组装到栅极孔洞中去,并且每一个孔洞中碳纳米管具有相同的组装密度。该工艺成本低、可实现大面积阴极的制备,是一种在制备三极管型碳纳米管场发射显示阴极中可供选择的工艺。 展开更多
关键词 碳纳米管 场发射阴极 电泳工艺
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现代显示技术的研究进展 被引量:6
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作者 袁泽明 杨玉叶 +1 位作者 高锐敏 姚宁 《现代显示》 2008年第11期18-21,57,共5页
结合其发光原理及特点分析了阴极射线管(CRT)显示器、液晶显示器(LCD)、等离子显示器(PDP)、场发射显示器(FED)的市场走向,认为FED是一种最理想的显示器。对FED不同类型的阴极场发射阵列(FEA)进行比较,认为碳纳米管薄膜阴极是目前最有... 结合其发光原理及特点分析了阴极射线管(CRT)显示器、液晶显示器(LCD)、等离子显示器(PDP)、场发射显示器(FED)的市场走向,认为FED是一种最理想的显示器。对FED不同类型的阴极场发射阵列(FEA)进行比较,认为碳纳米管薄膜阴极是目前最有希望实现FED市场化的场发射体。 展开更多
关键词 阴极射线管 液晶显示器 等离子显示器 场发射显示器 场发射阵列 碳纳米管
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碳纳米管阴极强流脉冲发射特性实验
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作者 谌怡 夏连胜 +2 位作者 张篁 刘星光 廖庆亮 《强激光与粒子束》 EI CAS CSCD 北大核心 2011年第3期775-778,共4页
在2 MeV直线感应加速器注入器平台上研究了采用浸渍涂覆方法制备的大面积碳纳米管阴极发射体的强流发射特性。研究结果表明:在脉冲高压电场下,碳纳米管阴极具有强流电子束发射能力,发射电流密度较大;碳纳米管阴极发射电子过程为场致等... 在2 MeV直线感应加速器注入器平台上研究了采用浸渍涂覆方法制备的大面积碳纳米管阴极发射体的强流发射特性。研究结果表明:在脉冲高压电场下,碳纳米管阴极具有强流电子束发射能力,发射电流密度较大;碳纳米管阴极发射电子过程为场致等离子体发射。实验过程中,阴极端取样电阻环收集到的最大发射电流达350 A,阳极端法拉第筒收集的发射电流为167 A,最大阴极发射电流密度为19.4 A/cm2。 展开更多
关键词 直线感应加速器 碳纳米管 强流电子束 场致等离子体发射
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氢等离子体处理对类金刚石膜场发射性能的影响
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作者 赵立新 彭鸿雁 +7 位作者 陈玉强 罗玉杰 陈宝玲 徐闰 黄健 王林军 夏义本 金曾孙 《新型炭材料》 SCIE EI CAS CSCD 北大核心 2010年第4期317-320,共4页
采用大功率、高重复频率、准分子激光溅射热解石墨靶制备了类金刚石膜,研究了直流辉光氢等离子体处理对类金刚石膜的场发射性能的影响。结果表明:氢等离子体处理后,类金刚石膜的场发射性能明显提高,其发射阈值电场由26V/μm下降到19V/μ... 采用大功率、高重复频率、准分子激光溅射热解石墨靶制备了类金刚石膜,研究了直流辉光氢等离子体处理对类金刚石膜的场发射性能的影响。结果表明:氢等离子体处理后,类金刚石膜的场发射性能明显提高,其发射阈值电场由26V/μm下降到19V/μm。氢等离子体刻蚀除去了类金刚石膜生长表面的富含石墨的薄层,露出的新表面具有较低的功函数;膜表面的悬键被氢原子饱和,进一步降低了电子亲和势,改善了膜的场发射性能。 展开更多
关键词 类金刚石膜 氢等离子体处理 场发射
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氢分子吸附碳纳米管场发射性质的密度泛函理论研究(英文) 被引量:1
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作者 孙凯 樊志琴 刘秀英 《科学技术与工程》 2011年第25期6006-6009,共4页
使用第一原理密度泛函理论方法,对吸附氢分子的开口(5,5)单壁碳纳米管在有电场和无电场情况下的性质进行研究。研究结果表明在有电场发射条件下,吸附氢分子后的结构更加稳定。氢分子吸附后,费米能级处的局域态密度增加。
关键词 碳纳米管 场发射 密度泛函理论 氢吸附
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