HBsAg positive families including 375 indiduals were investigated in genetic epidemiology.The results showed the HBsAg carrier rate of the blood relatives was significantly higherthan that of the non-blood relatives(P...HBsAg positive families including 375 indiduals were investigated in genetic epidemiology.The results showed the HBsAg carrier rate of the blood relatives was significantly higherthan that of the non-blood relatives(P<0.01).The HBsAg carrier rate decreased with the degreeof relatives,that is,the HBsAg carrier rate of the lst degree relatives was higher than that of the 2nddegree relatives and the HBsAg carrier rate or the 2nd degree relatives wus higher than that of the3rd degree relatives(P<0.01).The HBsAg carrier rate of the individuals living together with theprobands was higher than that of those living apart (P<0.01).But the other two marker of HBVinfectivity,anti-HBs and anti-HBc didn't show significant difference mentioned above.The resultsanalysed by means of Logistic Regression model showed blood relationship played an important rolein HBsAg carrier state.In addition,the history of common environment was associated with HBsAgcarrier state.The average of heritability in the 1st,2nd,3rd degree relatives was 88.80%.Analysis.of genetic model showed HBsAg carrier saute corresponded to the ckaracteristic of multifactorial genetic disease,excluding the possibility of single gene genetic disease.展开更多
The long-range magnetism observed in group-V tellurides quintuple layers is the only working example of carrierfree dilute magnetic semiconductors(DMS), whereas the physical mechanism is unclear, except the speculat...The long-range magnetism observed in group-V tellurides quintuple layers is the only working example of carrierfree dilute magnetic semiconductors(DMS), whereas the physical mechanism is unclear, except the speculation on the band topology enhanced van Vleck paramagnetism. Based on DFT calculations, we find a stable longrange ferromagnetic order in a single quintuple layer of Cr-doped Bi_2Te_3 or Sb_2Te_3, with the dopant separation more than 9 ?. This configuration is the global energy minimum among all configurations. Different from the conventional super exchange theory, the magnetism is facilitated by the lone pair derived anti-bonding states near the cations. Such anti-bonding states work as stepping stones merged in the electron sea and conduct magnetism.Further, spin orbit coupling induced band inversion is found to be insignificant in the magnetism. Therefore, our findings directly dismiss the common misbelief that band topology is the only factor that enhances the magnetism.We further demonstrate that removal of the lone pair derived states destroys the long-range magnetism. This novel mechanism sheds light on the fundamental understanding of long-range magnetism and may lead to discoveries of new classes of DMS.展开更多
AIM: To estimate the amount of apoptosis among healthy HBsAg carriers, patients with chronic HBV infection treated with lamivudine and patients with chronic HCV infedJon treated with interferon alpha and ribavirin. Ac...AIM: To estimate the amount of apoptosis among healthy HBsAg carriers, patients with chronic HBV infection treated with lamivudine and patients with chronic HCV infedJon treated with interferon alpha and ribavirin. Activity of apoptosis was evaluated by serum sFas/sFasL concentration measurement.Moreover dependence between apoptosis and HBV-DNA or HCV-RNA levels was studied.METHODS: Eighty-six persons were included into study: 34 healthy HBsAg carriers, 33 patients with chronic HBV infection and 19 patients with chronic HCV infection. Serum levels of sFas/sFasL were measured by ELISA assay. HBV-DNA and HCV-RNA were measured by RT-PCR assay. Levels of sFas/sFasL were determined before and 2 and 12 wk after therapy in patients with chronic hepatitis B and C infection.HBV-DNA or HCV-RNA was detected before treatment and 6 mo after treatment.RFSULTS: Twenty-four (71%) healthy HBsAg carriers showed HBV-DNA over 10^5/mL, which was comparable to the patients with chronic hepatitis B. Independently from HBV-DNA levels,the concentration of sFas among healthy HBsAg carriers was comparable to healthy persons. Among patients with chronic hepatitis B and C, the concentration of sFas was significantly higher in comparison to healthy HBsAg carriers and healthy persons. In chronic hepatitis B patients the concentration of sFas was decreased during lamivudine treatment. Among chronic hepatitis C patients the concentration of sFas was increased during IFN alpha and ribavirin treatment, sFasL was not detected in control group. Furthermore sFasL oo:urred more frequently in chronic hepatitis C patients in comparison to chronic hepatitis B patients.CONCLUSION: There are no correlations between apoptosis and HBV-DNA levels. However ther is an association between apoptosis and activity of inflammation in patients with chronic HBV infection. Apoptosis can be increased in patients with chronic hepatitis C by effective treatment which may be a result of apoptosis stimulation by IFN-α.展开更多
A contrast study on the effects of manual acupuncture and electroacupuncture wasconducted in 60 cases of chronic hepatitis B carriers.The results demonstrated that theimmunological functions,both cellular and humoral,...A contrast study on the effects of manual acupuncture and electroacupuncture wasconducted in 60 cases of chronic hepatitis B carriers.The results demonstrated that theimmunological functions,both cellular and humoral,were markedly regulated asevidenced by the negative turnover rates of HBsAg,HBeAg,anti-HBc and HBcAg,as wellas the positive turnover rate of anti-HBe.展开更多
The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum do...The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum dose of 3.3 × 1013 el/cm2. In-situ measurements were carried out under artificial conditions simulating natural environment (space, semiconductor detectors, etc.). The observed phenomena were investigated experimentally in-situ using a high-speed oscilloscope equipped with a special preamplifier. Following irradiation to particular doses, some peculiarities of the recovery time of the semiconductor equilibrium condition (“characteristic time”), were obtained. Thus, it was found that the value of the “characteristic time” differs by an order of magnitude from the lifetime of the non-equilibrium (minority) charge carrier measured in an ex-situ regime. However, their behavior, as a function of irradiation dose, is similar and decreases with dose increase. Investigations of the dependencies of electro-physical parameters on irradiation dose, using Hall effect measurements, showed that at particular doses the radiation defects thus created, have an insignificant influence on the concentration of the charge carriers, but change their scattering properties appreciably, which affects the time parameters for the recombination of the semiconductor charge carriers. This investigation uses a novel approach to solid-state radiation physics, where in situ measurements were conducted in addition to conventional pre- and post-irradiation.展开更多
Intrinsic carrier concentration(ni) is one of the most important physical parameters for understanding the physics of strained Si and Si1-xGex materials as well as for evaluating the electrical properties of Si-based ...Intrinsic carrier concentration(ni) is one of the most important physical parameters for understanding the physics of strained Si and Si1-xGex materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and Si1-xGex materials has been still lacking. In this paper, by analyzing the band structure of strained Si and Si1-xGex materials, both the effective densities of the state near the top of valence band and the bottom of conduction band( Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction(x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si(001) and Si1-xGex(001) and(101) materials at 300 K increases significantly with increasing Ge fraction(x), which provides valuable references to understand the Sibased strained device physics and design.展开更多
A serological survey conducted among 196 pregnant women resident in and around Maiduguri, an urban town in north eastern Nigeria showed that 33 (16.8%) were asymptomatic carriers of hepatitis B virus surface antigen (...A serological survey conducted among 196 pregnant women resident in and around Maiduguri, an urban town in north eastern Nigeria showed that 33 (16.8%) were asymptomatic carriers of hepatitis B virus surface antigen (HBsAg). They are within the age range of 14-40 years with mean (± SD) age of 24.7 (± 6.3). The women attend antenatal clinic at the State Specialist Hospital, a secondary health facility in Maiduguri, Borno state. The women are all heterosexuals. The distribution of HBsAg carrier rate according to age of women studied showed a significant (p = 0.0061) increase of the prevalence of HBsAg from 4 (8.7%) in the lower age group (39 years). According to the number of pregnancies, the prevalence of HBsAg infection increased significantly from 6 (9.2%) among primiparous to 13 (13.7%) and 14 (38.9%) among multiparous and grand multiparous respectively. The carrier rate of HBsAg infection among the pregnant women studied based on their duration of pregnancies and their social class showed no significant differences. However, according to the factors known to be commonly associated with the highest risk of transmission of HBV such as history of blood transfusion, Tribal marks/tattooing, use of sharps, sharing of articles, history of jaundice in the women and husbands, history of sexually transmitted infections (STIs) of the women and husbands and the type of marriage (monogamous or polygamous), number of sexual relationships per week, only the history of blood transfusion was significantly associated with HBsAg carrier rate (RR = 3.71., 95% Confidence Interval (C.I.), 1.89-7.30, p = 0.0078). The study confirms that pregnant women who attend antenatal clinic in this secondary health facility are at higher risk of being infected with the HBV, which could lead to both prenatal and post natal transmission to their newborns.展开更多
文摘HBsAg positive families including 375 indiduals were investigated in genetic epidemiology.The results showed the HBsAg carrier rate of the blood relatives was significantly higherthan that of the non-blood relatives(P<0.01).The HBsAg carrier rate decreased with the degreeof relatives,that is,the HBsAg carrier rate of the lst degree relatives was higher than that of the 2nddegree relatives and the HBsAg carrier rate or the 2nd degree relatives wus higher than that of the3rd degree relatives(P<0.01).The HBsAg carrier rate of the individuals living together with theprobands was higher than that of those living apart (P<0.01).But the other two marker of HBVinfectivity,anti-HBs and anti-HBc didn't show significant difference mentioned above.The resultsanalysed by means of Logistic Regression model showed blood relationship played an important rolein HBsAg carrier state.In addition,the history of common environment was associated with HBsAgcarrier state.The average of heritability in the 1st,2nd,3rd degree relatives was 88.80%.Analysis.of genetic model showed HBsAg carrier saute corresponded to the ckaracteristic of multifactorial genetic disease,excluding the possibility of single gene genetic disease.
基金Supported by Chinese University of Hong Kong(CUHK)under Grant No 4053084University Grants Committee of Hong Kong under Grant No 24300814the Start-up Funding of CUHK
文摘The long-range magnetism observed in group-V tellurides quintuple layers is the only working example of carrierfree dilute magnetic semiconductors(DMS), whereas the physical mechanism is unclear, except the speculation on the band topology enhanced van Vleck paramagnetism. Based on DFT calculations, we find a stable longrange ferromagnetic order in a single quintuple layer of Cr-doped Bi_2Te_3 or Sb_2Te_3, with the dopant separation more than 9 ?. This configuration is the global energy minimum among all configurations. Different from the conventional super exchange theory, the magnetism is facilitated by the lone pair derived anti-bonding states near the cations. Such anti-bonding states work as stepping stones merged in the electron sea and conduct magnetism.Further, spin orbit coupling induced band inversion is found to be insignificant in the magnetism. Therefore, our findings directly dismiss the common misbelief that band topology is the only factor that enhances the magnetism.We further demonstrate that removal of the lone pair derived states destroys the long-range magnetism. This novel mechanism sheds light on the fundamental understanding of long-range magnetism and may lead to discoveries of new classes of DMS.
文摘AIM: To estimate the amount of apoptosis among healthy HBsAg carriers, patients with chronic HBV infection treated with lamivudine and patients with chronic HCV infedJon treated with interferon alpha and ribavirin. Activity of apoptosis was evaluated by serum sFas/sFasL concentration measurement.Moreover dependence between apoptosis and HBV-DNA or HCV-RNA levels was studied.METHODS: Eighty-six persons were included into study: 34 healthy HBsAg carriers, 33 patients with chronic HBV infection and 19 patients with chronic HCV infection. Serum levels of sFas/sFasL were measured by ELISA assay. HBV-DNA and HCV-RNA were measured by RT-PCR assay. Levels of sFas/sFasL were determined before and 2 and 12 wk after therapy in patients with chronic hepatitis B and C infection.HBV-DNA or HCV-RNA was detected before treatment and 6 mo after treatment.RFSULTS: Twenty-four (71%) healthy HBsAg carriers showed HBV-DNA over 10^5/mL, which was comparable to the patients with chronic hepatitis B. Independently from HBV-DNA levels,the concentration of sFas among healthy HBsAg carriers was comparable to healthy persons. Among patients with chronic hepatitis B and C, the concentration of sFas was significantly higher in comparison to healthy HBsAg carriers and healthy persons. In chronic hepatitis B patients the concentration of sFas was decreased during lamivudine treatment. Among chronic hepatitis C patients the concentration of sFas was increased during IFN alpha and ribavirin treatment, sFasL was not detected in control group. Furthermore sFasL oo:urred more frequently in chronic hepatitis C patients in comparison to chronic hepatitis B patients.CONCLUSION: There are no correlations between apoptosis and HBV-DNA levels. However ther is an association between apoptosis and activity of inflammation in patients with chronic HBV infection. Apoptosis can be increased in patients with chronic hepatitis C by effective treatment which may be a result of apoptosis stimulation by IFN-α.
文摘A contrast study on the effects of manual acupuncture and electroacupuncture wasconducted in 60 cases of chronic hepatitis B carriers.The results demonstrated that theimmunological functions,both cellular and humoral,were markedly regulated asevidenced by the negative turnover rates of HBsAg,HBeAg,anti-HBc and HBcAg,as wellas the positive turnover rate of anti-HBe.
文摘The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum dose of 3.3 × 1013 el/cm2. In-situ measurements were carried out under artificial conditions simulating natural environment (space, semiconductor detectors, etc.). The observed phenomena were investigated experimentally in-situ using a high-speed oscilloscope equipped with a special preamplifier. Following irradiation to particular doses, some peculiarities of the recovery time of the semiconductor equilibrium condition (“characteristic time”), were obtained. Thus, it was found that the value of the “characteristic time” differs by an order of magnitude from the lifetime of the non-equilibrium (minority) charge carrier measured in an ex-situ regime. However, their behavior, as a function of irradiation dose, is similar and decreases with dose increase. Investigations of the dependencies of electro-physical parameters on irradiation dose, using Hall effect measurements, showed that at particular doses the radiation defects thus created, have an insignificant influence on the concentration of the charge carriers, but change their scattering properties appreciably, which affects the time parameters for the recombination of the semiconductor charge carriers. This investigation uses a novel approach to solid-state radiation physics, where in situ measurements were conducted in addition to conventional pre- and post-irradiation.
基金Funded by the National Natural Science Foundation of China(Nos.51278058,41404095,51277012,61201233)the Fundamental Research Funds for the Central Universities(Nos.2013G1241120,2013G1241107,2013G1241114,CHD2011ZD004)+1 种基金Research Fund of Shaanxi Provincial Research Center for Telecommunication ASIC Design(No.SXASIC2014-1)the Shaanxi Science and Technology Research and Development Program(No.2013KJXX-93)
文摘Intrinsic carrier concentration(ni) is one of the most important physical parameters for understanding the physics of strained Si and Si1-xGex materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and Si1-xGex materials has been still lacking. In this paper, by analyzing the band structure of strained Si and Si1-xGex materials, both the effective densities of the state near the top of valence band and the bottom of conduction band( Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction(x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si(001) and Si1-xGex(001) and(101) materials at 300 K increases significantly with increasing Ge fraction(x), which provides valuable references to understand the Sibased strained device physics and design.
文摘A serological survey conducted among 196 pregnant women resident in and around Maiduguri, an urban town in north eastern Nigeria showed that 33 (16.8%) were asymptomatic carriers of hepatitis B virus surface antigen (HBsAg). They are within the age range of 14-40 years with mean (± SD) age of 24.7 (± 6.3). The women attend antenatal clinic at the State Specialist Hospital, a secondary health facility in Maiduguri, Borno state. The women are all heterosexuals. The distribution of HBsAg carrier rate according to age of women studied showed a significant (p = 0.0061) increase of the prevalence of HBsAg from 4 (8.7%) in the lower age group (39 years). According to the number of pregnancies, the prevalence of HBsAg infection increased significantly from 6 (9.2%) among primiparous to 13 (13.7%) and 14 (38.9%) among multiparous and grand multiparous respectively. The carrier rate of HBsAg infection among the pregnant women studied based on their duration of pregnancies and their social class showed no significant differences. However, according to the factors known to be commonly associated with the highest risk of transmission of HBV such as history of blood transfusion, Tribal marks/tattooing, use of sharps, sharing of articles, history of jaundice in the women and husbands, history of sexually transmitted infections (STIs) of the women and husbands and the type of marriage (monogamous or polygamous), number of sexual relationships per week, only the history of blood transfusion was significantly associated with HBsAg carrier rate (RR = 3.71., 95% Confidence Interval (C.I.), 1.89-7.30, p = 0.0078). The study confirms that pregnant women who attend antenatal clinic in this secondary health facility are at higher risk of being infected with the HBV, which could lead to both prenatal and post natal transmission to their newborns.