近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流...近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流子寿命和阻断电压等方面近十几年的发展历程和现状;介绍了具有改良SiC GTO开关特性的碳化硅发射极关断晶闸管(SiC ETO)的特性及其结构和原理;分析了6 500 V SiC ETO的正向导通特性和阻断特性,并通过实验验证了其快速关断特性。最后从器件及其应用的角度提出了SiC GTO晶闸管技术未来发展的方向。展开更多
This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, know...This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through （SPT） concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT＋ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT＋ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop （Von） and turn-off loss （Eoff） in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT＋ IGBT.展开更多
文摘近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流子寿命和阻断电压等方面近十几年的发展历程和现状;介绍了具有改良SiC GTO开关特性的碳化硅发射极关断晶闸管(SiC ETO)的特性及其结构和原理;分析了6 500 V SiC ETO的正向导通特性和阻断特性,并通过实验验证了其快速关断特性。最后从器件及其应用的角度提出了SiC GTO晶闸管技术未来发展的方向。
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through （SPT） concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT＋ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT＋ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop （Von） and turn-off loss （Eoff） in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT＋ IGBT.
