The controllable growth of large area band gap engineered-semiconductor nanowires(NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this ...The controllable growth of large area band gap engineered-semiconductor nanowires(NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS_xSe_(1-x) nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS_xSe_(1-x)NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS_xSe_(1-x)NWs possess smooth surface and uniform diameter. The aligned CdS_xSe_(1-x)NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS_xSe_(1-x)NWs. These devices exhibit high performance and fast response speed with photoresponsivity ～670 A W^(-1) and photoresponse time ～76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays,which exhibit promising applications in future optoelectronic integrated circuits.展开更多
Alloyed ternary CdSxSe1-x nanorods have been synthesized by the thermal treatment of Cd2＋-dispersed polyethylene glycol 2 000 gel （PEG 2000） with ethylenediamine solution of sulfur and selenium in a sealed system a...Alloyed ternary CdSxSe1-x nanorods have been synthesized by the thermal treatment of Cd2＋-dispersed polyethylene glycol 2 000 gel （PEG 2000） with ethylenediamine solution of sulfur and selenium in a sealed system at 180 ℃ for 24 h, in which the ratio of S to Se in the nanorods was controlled by adjusting the relative amounts of the starting materials. Based on the results of experiments, it is found that the CdSxSe1-x nanorods were also synthesized with several sulfur sources by the method. X-ray diffraction （XRD） shows that the alloyed ternary CdSxSe1-x nanorods are highly crystalline, and no other phase was observed in these nanorods.展开更多
CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The inte...CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 K.The band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 K.The component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard Law.Moreover,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).展开更多
基金the NSF of China (Nos.51525202,61574054,61635001,61505051,and 51772088)the Hunan province science and technology plan (Nos.2014FJ2001 and 2014TT1004)+1 种基金the Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Provincethe Fundamental Research Funds for the Central Universities
文摘The controllable growth of large area band gap engineered-semiconductor nanowires(NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS_xSe_(1-x) nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS_xSe_(1-x)NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS_xSe_(1-x)NWs possess smooth surface and uniform diameter. The aligned CdS_xSe_(1-x)NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS_xSe_(1-x)NWs. These devices exhibit high performance and fast response speed with photoresponsivity ～670 A W^(-1) and photoresponse time ～76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays,which exhibit promising applications in future optoelectronic integrated circuits.
基金This paper is financially supported by Department of Science and Technology of Wuhan (No. 20065004116-22) and Department of Science and Technology of Foshan
文摘Alloyed ternary CdSxSe1-x nanorods have been synthesized by the thermal treatment of Cd2＋-dispersed polyethylene glycol 2 000 gel （PEG 2000） with ethylenediamine solution of sulfur and selenium in a sealed system at 180 ℃ for 24 h, in which the ratio of S to Se in the nanorods was controlled by adjusting the relative amounts of the starting materials. Based on the results of experiments, it is found that the CdSxSe1-x nanorods were also synthesized with several sulfur sources by the method. X-ray diffraction （XRD） shows that the alloyed ternary CdSxSe1-x nanorods are highly crystalline, and no other phase was observed in these nanorods.
基金supported by the NSFC (No. 50532080)the Key Laboratory Projects of The Education Department of Liaoning Province (No. 20060131)
文摘CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 K.The band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 K.The component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard Law.Moreover,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).
