从光电转换的基本原理出发,分析了禁带宽度 Eg、薄膜以及异质结对材料的选择原则。在异质结理论的基础上,分析了 p-ZnTe/n-CdTe 异质结的结区结构,在两种材料的界面处,导带底形成了不连续的“断口”,价带顶 p 区一侧形成尖峰,n 区一侧...从光电转换的基本原理出发,分析了禁带宽度 Eg、薄膜以及异质结对材料的选择原则。在异质结理论的基础上,分析了 p-ZnTe/n-CdTe 异质结的结区结构,在两种材料的界面处,导带底形成了不连续的“断口”,价带顶 p 区一侧形成尖峰,n 区一侧形成凹口。当热平衡时,由于导带中电子从 n 区到 p 区所遇到的势垒大于价带中空穴从 p 区到 n 区的势垒,所以,通过势垒的主要是空穴流。讨论了 p-Zn-Te/n-CdTe 异质结的制作方法及工艺问题。最后,给出了测试结果。展开更多
In this paper the binding energy of the shallow.donor in CdTe/ZnTe strained double quantum well was calculated.The effect of the finite well potential and strain,resulting from the lattice mismatch,on the binding ener...In this paper the binding energy of the shallow.donor in CdTe/ZnTe strained double quantum well was calculated.The effect of the finite well potential and strain,resulting from the lattice mismatch,on the binding energy of the impurity is included in a variational framework.The binding energy is obtained as a function of the well width,barrier width,and impurity position in the barrier by using a variational method.The result of the present calculation shows that the variational law of the binding energy is similar to that of unstrained materials.展开更多
CdS/CdTe solar cells with ZnTe/ZnTe:Cu buffer layers were fabricated and studied.The energyband structure of it was analyzed.The C-V,I-V characteristics and the spectral response show that theZnTe/ZnTe:Cu buffer layer...CdS/CdTe solar cells with ZnTe/ZnTe:Cu buffer layers were fabricated and studied.The energyband structure of it was analyzed.The C-V,I-V characteristics and the spectral response show that theZnTe/ZnTe:Cu buffer layers improve the back contact characteristic properties,the diode characteristicsof the forward junction and the short-wave spectral response of the CdTe solar cells.The ZnTe/ZnTe:Cubuffer layers affect the solar cell conversion efficiency and its fill factor.展开更多
ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as ...ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as annealing temperatures on I-V characteristics of CdTe solar cells have been studied. The results show that the “roll over” and “cross over” phenomena of dark and light I-V curves can be eliminated by use of ZnTe/ZnTe:Cu layer and the fill factor for a typical sample has increased to 73%, where there is no high resistance transparent layer. The reasons have been discussed combined with the energy band diagram of CdTe solar cells.展开更多
文摘从光电转换的基本原理出发,分析了禁带宽度 Eg、薄膜以及异质结对材料的选择原则。在异质结理论的基础上,分析了 p-ZnTe/n-CdTe 异质结的结区结构,在两种材料的界面处,导带底形成了不连续的“断口”,价带顶 p 区一侧形成尖峰,n 区一侧形成凹口。当热平衡时,由于导带中电子从 n 区到 p 区所遇到的势垒大于价带中空穴从 p 区到 n 区的势垒,所以,通过势垒的主要是空穴流。讨论了 p-Zn-Te/n-CdTe 异质结的制作方法及工艺问题。最后,给出了测试结果。
文摘In this paper the binding energy of the shallow.donor in CdTe/ZnTe strained double quantum well was calculated.The effect of the finite well potential and strain,resulting from the lattice mismatch,on the binding energy of the impurity is included in a variational framework.The binding energy is obtained as a function of the well width,barrier width,and impurity position in the barrier by using a variational method.The result of the present calculation shows that the variational law of the binding energy is similar to that of unstrained materials.
基金the High Technology Research and Development Programme of China(No.2003AA513010)the National Natural Science Foundation of China(No.50079030).
文摘CdS/CdTe solar cells with ZnTe/ZnTe:Cu buffer layers were fabricated and studied.The energyband structure of it was analyzed.The C-V,I-V characteristics and the spectral response show that theZnTe/ZnTe:Cu buffer layers improve the back contact characteristic properties,the diode characteristicsof the forward junction and the short-wave spectral response of the CdTe solar cells.The ZnTe/ZnTe:Cubuffer layers affect the solar cell conversion efficiency and its fill factor.
基金Supported by the National High Technology ResearchDevelopment Program (863 Program)the Tenth Five-year Plan of China (Grant No. 2003AA513010)
文摘ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as annealing temperatures on I-V characteristics of CdTe solar cells have been studied. The results show that the “roll over” and “cross over” phenomena of dark and light I-V curves can be eliminated by use of ZnTe/ZnTe:Cu layer and the fill factor for a typical sample has increased to 73%, where there is no high resistance transparent layer. The reasons have been discussed combined with the energy band diagram of CdTe solar cells.
