This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentr...This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd<sub>0.4</sub>Zn<sub>0.6</sub>S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS are comparable, Cd<sub>0.4</sub>Zn<sub>0.6</sub>S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS showed that optimum buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.展开更多
The numerical simulations were performed using the AMPS-1D simulator to study the effects of the CZTS as an absorber layer and the contacts’barrier height on the performance of four ZnO/CdS/CZTS solar cells.To obtain...The numerical simulations were performed using the AMPS-1D simulator to study the effects of the CZTS as an absorber layer and the contacts’barrier height on the performance of four ZnO/CdS/CZTS solar cells.To obtain the best cell performances,the barrier heights of the back and front contacts were adjusted between 0.01,0.77,0.5,and 1.55 eV,respectively.For simulations,we used the lifetime mode,and the device performances were evaluated under AM1.5 illumination spectra.We found that the efficiency,fill factor,and open-circuit voltage were almost constant at a front contact barrier height of less than 0.31 eV.The short-current density was not affected by the front contact barrier height.The back contact material had a significant impact on the CZTS cells parameters.The best performance was obtained for the CZTS550 cell with JSC=29.53 mA/cm2,VOC=1.07 V,FF=0.88,andη=28.08%at barrier heights of 0.31 and 1.55 eV for front and back contacts,respectively.The conduction band offset at the CZTS550/CdS hetero-junction was found to be spike-like with 0.21 eV.The obtained conversion efficiency is comparable to those previously reported in the literature.展开更多
Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency a...Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS<sub>2</sub> as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (V<sub>oc</sub>), short- circuit current density (J<sub>sc</sub>), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, J<sub>SC</sub> of 32.53 mA/cm<sup>2</sup>, V<sub>oc</sub> of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, V<sub>oc</sub> of 0.898 V, J<sub>SC</sub> of 31.56 mA/cm<sup>2</sup>, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS<sub>2</sub> as a BSF and CdS as a buffer layer in high-performance, cost-effective CZTS SC designs.展开更多
文摘This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd<sub>0.4</sub>Zn<sub>0.6</sub>S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS are comparable, Cd<sub>0.4</sub>Zn<sub>0.6</sub>S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS showed that optimum buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.
文摘The numerical simulations were performed using the AMPS-1D simulator to study the effects of the CZTS as an absorber layer and the contacts’barrier height on the performance of four ZnO/CdS/CZTS solar cells.To obtain the best cell performances,the barrier heights of the back and front contacts were adjusted between 0.01,0.77,0.5,and 1.55 eV,respectively.For simulations,we used the lifetime mode,and the device performances were evaluated under AM1.5 illumination spectra.We found that the efficiency,fill factor,and open-circuit voltage were almost constant at a front contact barrier height of less than 0.31 eV.The short-current density was not affected by the front contact barrier height.The back contact material had a significant impact on the CZTS cells parameters.The best performance was obtained for the CZTS550 cell with JSC=29.53 mA/cm2,VOC=1.07 V,FF=0.88,andη=28.08%at barrier heights of 0.31 and 1.55 eV for front and back contacts,respectively.The conduction band offset at the CZTS550/CdS hetero-junction was found to be spike-like with 0.21 eV.The obtained conversion efficiency is comparable to those previously reported in the literature.
文摘Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS<sub>2</sub> as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (V<sub>oc</sub>), short- circuit current density (J<sub>sc</sub>), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, J<sub>SC</sub> of 32.53 mA/cm<sup>2</sup>, V<sub>oc</sub> of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, V<sub>oc</sub> of 0.898 V, J<sub>SC</sub> of 31.56 mA/cm<sup>2</sup>, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS<sub>2</sub> as a BSF and CdS as a buffer layer in high-performance, cost-effective CZTS SC designs.
文摘采用改进的垂直布里奇曼生长法生长Cd Zn Te(CZT)单晶,并在晶体生长后期采取长时间的原位恒温退火.采用红外透射显微镜、I-V特性曲线以及多道能谱仪测试经过原位退火后的晶体内部Te夹杂相分布、电阻率大小以及能谱响应.结果表明,原位退火可以大幅降低CZT晶体内部大尺寸Te夹杂相的密度,晶体内绝大部分的Te夹杂都集中在5μm以内.此外,原位退火后的晶体电阻率从4.54×108Ω·cm上升至3.73×1010Ω·cm.原位退火后的CZT晶体对241Am@59.5 ke Vγ射线表现出了良好的能量分辨率,为7.29%.
