Self-assembled S-scheme In_(2.77)S_(4)/K^(+)-doped g-C_(3)N_(4)photocatalyst with selective O_(2) reduction pathway for efficient H_(2)O_(2) production using water and air

The development of an efficient artificial H_(2)O_(2) photosynthesis system is a challenging work using H_(2)O and O_(2) as starting materials.Herein,3D In_(2.77)S_(4) nanoflower precursor was in-situ deposited on K^(+)-doped g-C_(3)N_(4)(KCN)nanosheets using a solvothermal method,then In_(2.77)S_(4)/KCN(IS/KCN)het-erojunction with an intimate interface was obtained after a calcination process.The investigation shows that the photocatalytic H_(2)O_(2) production rate of 50IS/KCN can reach up to 1.36 mmol g^(-1)h^(-1)without any sacrificial reagents under visible light irradiation,which is 9.2 times and 4.1 times higher than that of KCN and In_(2.77)S_(4)/respectively.The enhanced activity of the above composite can be mainly attributed to the S-scheme charge transfer route between KCN and In_(2.77)S_(4) according to density functional theory calculations,electron paramagnetic resonance and free radical capture tests,leading to an expanded light response range and rapid charge separation at their interface,as well as preserving the active electrons and holes for H_(2)O_(2) production.Besides,the unique 3D nanostructure and surface hydrophobicity of IS/KCN facilitate the diffusion and transportation of O_(2) around the active centers,the energy barriers of O_(2) protonation and H_(2)O_(2) desorption steps are ef-fectively reduced over the composite.In addition,this system also exhibits excellent light harvesting ability and stability.This work provides a potential strategy to explore a sustainable H_(2)O_(2) photo-synthesis pathway through the design of heterojunctions with intimate interfaces and desired reac-tion thermodynamics and kinetics.

First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

This study delves into the charge transfer mechanism of boron (B)-doped 3C-SiC through first-principles investigations. We explore the effects of B doping on the electronic properties of 3C-SiC, focusing on a 12.5% impurity concentration. Our comprehensive analysis encompasses structural properties, electronic band structures, and charge density distributions. The optimized lattice constant and band gap energy of 3C-SiC were found to be 4.373 Å and 1.36 eV respectively, which is in agreement with previous research (Bui, 2012;Muchiri et al., 2018). Our results show that B doping narrows the band gap, enhances electrical conductivity, and influences charge transfer interactions. The charge density analysis reveals substantial interactions between B dopants and surrounding carbon atoms. This work not only enhances our understanding of the material’s electronic properties, but also highlights the importance of charge density analysis for characterizing charge transfer mechanisms and their implications in the 3C-SiC semiconductors.

NaYSiO_(4)∶Ce^(3+)蓝色荧光粉的发光性质及其在白光发光二极管上的应用

采用高温固相法合成了NaYSiO_(4)∶xCe^(3+)(0.01≤x≤0.05)系列蓝色荧光粉。NaYSiO_(4)∶xCe^(3+)荧光粉在250~360 nm之间的宽带吸收能与紫外LED芯片很好地匹配。NaYSiO_(4)∶xCe^(3+)荧光粉中存在多个Ce^(3+)离子荧光中心,且在紫外光激发下表现出峰值波长位于414 nm附近的宽带蓝光发射。NaYSiO_(4)∶0.02Ce^(3+)荧光粉在300~350 nm紫外光激发下量子效率在25%以上。NaYSiO_(4)∶0.02Ce^(3+)荧光粉表现出优良的化学稳定性,在水中浸泡14 d后荧光强度和量子效率几乎不变。将NaYSiO_(4)∶0.02Ce^(3+)蓝色荧光粉、商用(Sr,Ba)_2SiO_(4)∶Eu^(2+)绿色荧光粉和商用(Ca,Sr)AlSiN_(3)∶Eu^(2+)红色荧光粉涂覆于310 nm紫外LED芯片上制备得到了显色指数高达95的LED器件。当驱动电流从50 mA逐渐增大到300 mA时,制备的LED器件表现出稳定的暖白光发射,其色坐标几乎不变。上述结果说明,本研究报道的NaYSiO_(4)∶0.02Ce^(3+)蓝色荧光粉在紫外LED芯片驱动的白光发光二极管照明上有着潜在应用价值。

Ce^(3+)掺杂一维多孔SnO_(2)纳米材料的模板合成及光致发光性能

以四氯化锡为金属源,P123为造孔剂,尿素为沉淀剂,无水乙醇为溶剂制备前躯体,以多孔阳极氧化铝(AAO)为模板合成了一维多孔SnO_(2)纳米材料,并采用多种手段进行表征。结果表明:所合成的一维SnO_(2)纳米材料直径大小均匀,具有多孔和四方晶相结构,Ce^(3+)离子通过掺杂的方式使其具备良好的光致发光性能。

Ce^(3+)-Tb^(3+)共掺杂黄磷炉渣微晶玻璃的发光与能量传递

以黄磷炉渣为原料,采用高温熔融法制备Ce^(3+)-Tb^(3+)共掺杂黄磷炉渣发光微晶玻璃,通过差热分析(DTA)、X射线衍射(XRD)、稳态/瞬态荧光(FLS)、CIE色度等探究不同的Tb^(3+)掺杂量对微晶玻璃析出晶相、发光性能和样品色度的影响。结果表明,Ce^(3+)和Tb^(3+)的引入,微晶玻璃主晶相为硅灰石,在310 nm波长激发下,随着Tb^(3+)掺杂量增加,位于380 nm处Ce^(3+)的特征发射峰减小,543 nm处Tb^(3+)的特征发射峰增强,证实Ce^(3+)和Tb^(3+)之间存在能量传递,能量传递效率达到24.55%。此外,通过调整Tb^(3+)掺杂量,微晶玻璃发光颜色可由蓝光调至绿光,从而实现发光颜色的可控化。

Mn^(2+)掺杂对YAG∶Ce^(3+)荧光陶瓷发光性能的影响

过渡族金属Mn^(2+)掺杂的石榴石荧光陶瓷被认为是实现高显色激光照明的候选材料。然而,由于Mn^(2+)在不同配位环境下离子半径的多样性,Mn^(2+)掺杂石榴石陶瓷体系设计方案尚不明确。本文采用真空烧结技术制备得到不同浓度Mn^(2+)掺杂的YAG∶Ce^(3+)荧光陶瓷,并将Mn^(2+)分别设计进入八面体(OC)和十二面体(DO)格位。通过表征样品物相和显微结构、光致发光、荧光寿命、量子效率等,并通过LD激光器激发对荧光陶瓷的发光性能进行研究。实验结果表明,在添加电荷与体积补偿剂SiO_(2)的前提下,相比Mn^(2+)进入十二面体格位,Mn^(2+)进入八面体后石榴石的晶体结构更加稳定。因此,当Mn^(2+)的浓度控制在0.5%^(6)%(at)范围内,OC系列样品的量子效率高于DO系列样品。此外,OC系列样品的PL谱中位于588 nm和725 nm处的发射峰分别对应于Mn^(2+)占据八面体和十二面体格位的^(4)T_(1)→^(6)A_(1)电子跃迁,而DO系列样品中位于572 nm处的发射峰则源于Mn^(2+)占据扭曲的十二面体格位产生的电子跃迁。得益于Ce^(3+)→Mn^(2+)间高效的能量传递,将浓度为6%(at)的Mn^(2+)设计进入YAG∶Ce^(3+)中八面体格位制得荧光陶瓷,封装得到的激光白光光源的显色指数为70.8,相对色温为5117 K。本文对于Mn^(2+)掺杂的石榴石发光材料的开发研究是有力补充,也为提升YAG∶Ce^(3+)荧光陶瓷光谱中的红光成分,进而提高医疗、显示等领域的激光光源的显色性能提供借鉴。

Lu^(3+)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体的增强红色上转换发光与光学温度传感性能

采用密封的坩埚下降法技术生长了一系列Lu^(3+)(摩尔分数0、0.6%、1.2%、1.8%)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体。在980 nm LD激发下,观察到单晶体的绿光543 nm(^(5)S_(2)/^(5)F_(4)→^(5)I_(8))、红光656 nm(^(5)F_(5)→^(5)I_(8))以及近红外750 nm(^(5)S_(2)/^(5)F4→^(5)I_(7))上转换发光。从上转换发光强度随激发光强度的变化情况,确定了543 nm、656 nm与750 nm的发光为双光子跃迁过程。研究了Lu^(3+)离子掺杂浓度对其发光强度与荧光寿命的影响情况,随着Lu^(3+)掺杂浓度从0增加到1.8%,单晶体中的656 nm红光逐步增强,543 nm绿光与750 nm近红外光随之减弱,红绿光强度比从0.01增加到了1.55,而543 nm荧光寿命从1.29 ms降低至0.99 ms。Lu^(3+)离子的掺入取代Y^(3+)晶格位,改变了单晶体的局域场环境,导致上转换发光强度的变化。基于随温度变化的上转换红光656 nm(^(5)F5→^(5)I8)与绿光543 nm(^(5)S_(2)/^(5)F4→^(5)I8)的发光强度变化,研究了1.8%Lu^(3+)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体在298~448 K范围内的绝对灵敏度和相对灵敏度最大值分别为0.242%·K^(-1)和0.217%·K^(-1)。

无压烧结制备Y_(2)MgAl_(4)SiO_(12)∶Ce^(3+)荧光陶瓷及光学性能

Y_(3)Al_(5)O_(12)∶Ce^(3+)荧光粉是目前白光LED的主要发光材料,但在使用时存在封装树脂因散热不佳而发生老化等问题。本文采用无压烧结制备了Y_(2)MgAl_(4)SiO_(12)∶Ce^(3+)透明陶瓷荧光体,用于替代荧光粉体和调控发光性能。首先通过化学共沉淀法制备前驱体粉体,经高温煅烧后采用冷等静压成型,最后在马弗炉中1 600℃煅烧制得透明荧光陶瓷。研究了Ce^(3+)掺杂浓度和样品厚度对材料性能的影响,其中掺杂量为0.5%的样品在800 nm处具有56%的透过率,在450 K下发光强度仍能保持室温强度的84%。与蓝光芯片组装成器件测试表明,荧光陶瓷在蓝光LEDs/LDs的激发下发出白光,其CIE色度坐标分别为(0.307 6,0.332 9)和(0.308 0,0.331 6),光效分别为62.6 lm/W和146.3 lm/W。研究结果表明,YMAS∶Ce荧光陶瓷可应用于白光LEDs/LDs领域。

溶液燃烧法制备Ce^(3+)掺杂LaAlO_(3)粉体及其荧光性能研究

以La(NO_(3))_(3)·6H_(2)O、Al(NO_(3))_(3)·9H_(2)O、Ce(NO_(3))_(3)·6H_(2)O为原料,C_(2)H_(5)NO_(2)为还原剂,采用溶液燃烧法合成La_(1-x)Ce_(x)AlO_(3)(x=0.01,0.02,0.03,0.04,0.05)样品。采用XRD、SEM、UV-Vis DRS、XPS和XRF对实验样品进行分析。结果表明,在825℃下保温4 h制备的La_(0.97)Ce_(0.03)AlO_(3)相比其他温度或Ce掺杂量的LaAlO_(3)而言,XRD特征峰更加突出和明显,其颗粒分散,轮廓清晰,晶粒尺寸为21.59 nm;其在紫外-可见光区域吸收变强,带隙宽度为4.86 eV。Ce^(3+)进入LaAlO_(3)晶格中占据了部分La^(3+)的位置,Ce^(3+)最佳掺杂浓度为0.03,其发射光谱的最强特征峰出现在525 nm处,发黄绿色光。

Gd^(3+)/Ce^(3+)对Tb^(3+)掺杂氟氧化物玻璃发光敏化作用的影响

本文采用高温熔融法制备了Gd/Tb、Gd/Ce、Gd/Ce/Tb掺杂的SiO_(2)-B_(2)O_(3)-BaF_(2)组分氟氧化物玻璃,通过测试X射线衍射光谱确定了其物相,通过测试其不同波段激发下的荧光光谱研究了不同Gd_(2)O_(3)掺量下Tb^(3+)的发光性能,并确定了Gd_(2)O_(3)更精确的最佳掺量范围。此外,文中通过改变气氛制备了Gd/Ce/Tb共掺杂氟氧化物玻璃,对比研究了Gd^(3+)和Ce^(3+)对Tb^(3+)的敏化作用。结果表明,本文所制备的氟氧化物玻璃都呈稳定的玻璃态;Gd^(3+)和Ce^(3+)对Tb^(3+)的发光都具有敏化作用,且Gd_(2)O_(3)掺量为7%(摩尔分数,下同)时敏化效果相较于其他掺量最为显著,超出7%则造成猝灭;Ce_(2)O_(3)掺入玻璃后以Ce^(3+)和Ce^(4+)两种价态共存,在还原气氛下掺入相较于空气气氛下掺入更容易保持Ce^(3+)状态,而且Ce^(3+)对Tb^(3+)的发光具有敏化作用,Ce^(4+)会抑制Tb^(3+)的发光。

Fabrication of Gd_(2)O_(3)-doped CeO_(2)thin films through DC reactive sputtering and their application in solid oxide fuel cells

Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.

黄色荧光粉La_(3)Si_(6)N_(11)∶Ce^(3+)的结构、性能研究及第一性原理计算

运用高温固相法合成掺铈的氮化物荧光粉La_(3)Si_(6)N_(11)∶Ce^(3+)。采用X射线衍射仪、能谱仪、荧光光谱仪对合成样品的结构、发光性能等进行研究,利用Rietveld方法对其结构精修,并计算了La_(3)Si_(6)N_(11)∶Ce^(3+)的色坐标、色纯度和色温。结果表明:该荧光粉的色坐标为(0.4165,0.558),落在黄绿光区域,计算得到La_(2.82)Si_(6)N_(11)∶Ce_(0.18)^(3+)的色纯度约为92.86%,具有较高的纯度,相关色温为4137K,属于中间色温。通过计算可得掺杂后La_(3)Si_(6)N_(11)∶Ce^(3+)的带隙值为2.92eV,相对掺杂前略微减少,且La_(3)Si_(6)N_(11)∶Ce^(3+)体系属于直接带隙结构,从而有利于提高其发光性能。

8YSZ/Y_(3)Al_(5)O_(12):Ce^(3+)光敏复合热障涂层的等温氧化及光谱响应特性

为了监测热障涂层在氧化过程中陶瓷层内部的残余热应力,制备了Y_(3)Al_(5)O_(12):Ce^(3+)含量不同的8YSZ/Y_(3)Al_(5)O_(12):Ce^(3+)光敏复合热障涂层。研究了Y_(3)Al_(5)O_(12):Ce^(3+)不同含量下8YSZ/Y_(3)Al_(5)O_(12):Ce^(3+)光敏复合热障涂层等温氧化过程的失效机理,阐述了陶瓷层内部残余热应力与Y_(3)Al_(5)O_(12):Ce^(3+)的发射光谱的峰值波长之间的内在响应机制;同时研究了8YSZ/Y_(3)Al_(5)O_(12):Ce^(3+)光敏复合热障涂层陶瓷层发射光谱峰值波长偏移量与氧化时间的关系,并拟合了8YSZ/10%Y_(3)Al_(5)O_(12):Ce^(3+)光敏复合热障涂层等温氧化时间与光谱变化的传感方程。结果表明:1 050℃等温氧化100 h过程中8YSZ/Y_(3)Al_(5)O_(12):Ce^(3+)光敏复合热障涂层失效主要是陶瓷层内部残余热应力导致,且随氧化时间的增加,陶瓷层内部残余热应力增加,Y3Al5O12:Ce3+的发射光谱的峰值波长向短波方向偏移;8YSZ/10%Y_(3)Al_(5)O_(12):Ce^(3+)光敏复合热障涂层发射光谱峰值波长偏移量与氧化时间传感方程为:Δλ=155.785 07·t0.004 15-154.792 58。因此,可以通过发射光谱峰值波长的偏移规律表征氧化过程中陶瓷层内部的残余热应力。

黄色荧光粉YAG:Ce^(3+)结构精修及发光性能

运用高温固相法在1 450℃合成系列掺铈的钇铝石榴石荧光粉Y_(3-x)Al_(5)O_(12):Ce_(x)^(3+),得到最佳样品为Y_(2.75)Al_(5)O_(12):Ce_(0.05)^(3+)。对样品进行X射线衍射、形貌特征、荧光光谱等方面的测试分析后,结果表明该荧光粉晶粒尺寸为15μm左右,各元素分布均匀,其精修图与实测XRD谱图基本吻合,属于立方晶系。色坐标为(0.645 1,0.354 5),色纯度达到94.04%,相关色温为3 770 K。通过能级分析,得出其斯托克位移Es为3 494 cm^(-1)。

Ce^(3+)⁃Cr^(3+)共掺杂Ba_(3)Sc_(4)O_(9)荧光材料的发光性能

红光‐近红外光谱技术在医疗领域具有广泛的应用。但对于当下采用蓝光LED激发荧光材料实现红光‐近红外光谱输出的器件结构而言,则普遍存在蓝光过剩的问题。本文提出了通过构筑Ce^(3+)→Cr^(3+)能量传递从而实现抑制器件蓝光输出的策略。以Ba_(3)Sc_(4)O_(9)为研究对象,采用Ce^(3+)/Cr^(3+)共掺杂,研究了其发光性能。结果表明,共掺杂的Ba3Sc4O9∶Ce^(3+)/Cr^(3+)同时具备了红光和近红外光发射能力,发射主峰分别位于585 nm和835 nm;Ce^(3+)→Cr^(3+)能量传递效率达50.92%。所封装的近红外LED器件的蓝光强度下降了78%,而Cr^(3+)的发射强度增至181%。

发光颜色可调的白磷钙矿结构Ca_(8)MgBi(PO_(4))7∶Ce^(3+),Tb^(3+)荧光粉的制备、发光性能及能量传递

采用具有白磷钙矿结构的磷酸盐作为目标产物,通过高温固相法制备了发光颜色可调的Ca_(8)MgBi(PO_(4))7∶Ce^(3+),Tb^(3+)荧光粉。利用X射线粉末衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱等表征手段对其物相组成、微观形貌及发光性能进行了详细研究。结果表明:掺杂少量的Ce^(3+)、Tb^(3+)并没有改变Ca_(8)MgBi(PO_(4))7基质的晶体结构。荧光光谱和荧光寿命曲线确定了Ce^(3+)-Tb^(3+)之间存在能量传递,其能量传递机制为四极-四极相互作用,能量传递效率可达81%。固定Ce^(3+)浓度而逐渐增加Tb^(3+)的掺杂量时,系列Ca_(8)MgBi(PO_(4))7∶0.08Ce^(3+),yTb^(3+)荧光粉的发光颜色可由蓝光调至绿光,从而实现发光颜色的可控化。

Ce^(3+)掺杂闪烁玻璃的研究进展

闪烁玻璃由于制备工艺简单,尺寸灵活可控,成本低廉等优点,有望成为中国环形正负电子对撞机(CEPC)中强子量能器的候选材料。其中,以Ce^(3+)发光中心掺杂闪烁玻璃有较好的闪烁性能。玻璃基质可以分为氧化物玻璃、卤化物玻璃和微晶玻璃。本文根据Ce^(3+)掺杂不同玻璃基质分类,重点关注了Ce^(3+)掺杂闪烁玻璃的光学透过率、光产额、衰减时间等闪烁性能和抗辐照特性。并且,总结了国内外以及闪烁玻璃合作组的最新研究成果。针对不同玻璃体系的研究现状,从玻璃组成与制备工艺等两个方面探讨了玻璃性能提升手段。最后,对Ce^(3+)掺杂闪烁玻璃未来的研究发展方向做出了展望。

Preparation and photoelectric properties of Ho^(3+)-doped titanium dioxide nanowire downconversion photoanode

Ho^3＋-doped titanium dioxide（TiO2：Ho^3＋） downconversion（DC） nanowires were synthesized through a simple hydrothermal method followed by a subsequent calcination process after being immersed in Ho（NO3）3 aqueous solution. Moreover, TiO2：Ho^3＋ nanowires（HTNWs） were used as the photoanode in dye-sensitized solar cells（DSSCs） to investigate their photoelectric properties. Scanning electron microscopy（SEM） and X-ray diffraction（XRD） were used to characterize the morphology and structure of the material, respectively. The photofluorescence and ultraviolet-visible absorption spectra of HTNWs reveal a DC from the near and middle ultraviolet light to visible light which matches the strong absorbed region of the N719 dye. Compared with the pure TNW photoanode, HTNWs DC photoanodes show greater photovoltaic efficiency. The photovoltaic conversion efficiency（η） of the DSSCs with HTNWs photoanode doped with 4% Ho2O3（mass fraction） is two times that with pure TNW photoanode. This enhancement could be attributed to HTNWs which could extend the spectral response range of DSSCs to the near and middle ultraviolet region and increase the short-circuit current density（Jsc） of DSSCs, thus leading to the enhancement of photovoltaic conversion efficiency.

酒石酸添加对Ce^(3+)激活硼锗酸盐闪烁玻璃发光性能的影响

本文采用传统的高温熔融法在空气气氛中制备了无色透明的Ce^(3+)激活硼锗酸盐闪烁玻璃,该硼锗酸盐闪烁玻璃中GeO_(2)和Gd_(2)O_(3)总含量为85%,测得其密度在5.82 g/cm^(3)左右,且在450~800 nm线性透过率可达80%以上。加入少量的酒石酸(C_(4)H_(6)O_(6))作为强还原剂以减少Ce^(4+)的产生,研究了在不同酒石酸添加量下硼锗酸盐闪烁玻璃中Ce^(3+)在340 nm激发波长下的荧光衰减特性,确定了酒石酸的最佳添加量。此外,硼锗酸盐闪烁玻璃鲜有光产额方面的报道,本文测得制备的Ce^(3+)激活硼锗酸盐闪烁玻璃的光产额为27 ph/MeV,且该高密度Ce^(3+)激活硼锗酸盐闪烁玻璃具有最短约14.40 ns的衰减时间。可以预见,该高密度、快闪烁硼锗酸盐闪烁玻璃在高能物理和医学成像等领域有着巨大的发展潜力。

Sm^(3+)/Ce^(3+)共掺杂B_(2)O_(3)-Al_(2)O_(3)-SiO_(2)玻璃的结构和激光吸收性能

在硼铝硅酸盐玻璃(43B_(2)O_(3)-25Al_(2)O_(3)-32SiO_(2))中进行Sm^(3+)/Ce^(3+)共掺杂,采用固相熔融法制备(B_(2)O_(3)-Al_(2)O_(3)-SiO_(2))-20Sm_(2)O_(3)-x CeO_(2)(x为0~6%,摩尔分数)玻璃,借助X射线衍射、扫描电镜、X射线光电子能谱、紫外-可见-近红外分光光度计等表征方法研究玻璃的结构和激光吸收性能。结果表明,所有样品均为玻璃状,Sm^(3+)和Ce^(3+)均匀分布。随CeO_(2)的摩尔分数从0增加到2%,玻璃中桥氧的摩尔分数从60.12%增加到63.82%,而当CeO_(2)的摩尔分数增加到6%时,桥氧的摩尔分数下降到59.41%。CeO_(2)摩尔分数为2%时玻璃的激光吸收性能最好,漫反射吸收峰位为1076 nm,漫反射率为48.10%。Sm^(3+)/Ce^(3+)共掺杂的硼铝硅酸盐玻璃是一种很有前景的1.06μm波长激光的吸收材料。