Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

In-situ constructed SnO_(2) gradient buffer layer as a tight and robust interphase toward Li metal anodes in LATP solid state batteries

Li_(1.3)Al_(0.3)Ti_(1.7)(PO_(4))_(3)(LATP),of much interest owing to its high ionic conductivity,superior air stability,and low cost,has been regarded as one of the most promising solid-state electrolytes for next-generation solid-state lithium batteries(SSLBs).Unfortunately,the commercialization of SSLBs is still impeded by severe interfacial issues,such as high interfacial impedance and poor chemical stability.Herein,we proposed a simple and convenient in-situ approach to constructing a tight and robust interface between the Li anode and LATP electrolyte via a SnO_(2)gradient buffer layer.It is firmly attached to the surface of LATP pellets due to the volume expansion of SnO_(2)when in-situ reacting with Li metal,and thus effectively alleviates the physical contact loosening during cycling,as confirmed by the mitigated impedance rising.Meanwhile,the as-formed SnO_(2)/Sn/LixSn gradient buffer layer with low electronic conductivity successfully protects the LATP electrolyte surface from erosion by the Li metal anode.Additionally,the LixSn alloy formed at the Li surface can effectively regulate uniform lithium deposition and suppress Li dendrite growth.Therefore,this work paves a new way to simultaneously address the chemical instability and poor physical contact of LATP with Li metal in developing low-cost and highly stable SSLBs.

Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor

The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.

Preparation of CeO_2 Buffer Layer on Cube Textured Nickel Substrate by Reactive Sputtering

The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free.

Effect of Al_2O_3 Buffer Layers on the Properties of Sputtered VO_2 Thin Films

VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.

Effects of HfO_2 buffer layers on the dielectric property and leakage current of Ba_(0.6)Sr_(0.4)TiO_3 thin films by pulsed laser deposition

Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.

Effect of CoSi_2 buffer layer on structure and magnetic properties of Co films grown on Si(001) substrate

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si（001） substrates. In order to investigate morphology, structure,and magnetic properties of films, scanning tunneling microscope（STM）, low energy electron diffraction（LEED）, high resolution transmission electron microscopy（HRTEM）, and surface magneto-optical Kerr effect（SMOKE） were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2 buffer layers. Few Co Si2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic（001） films.

CeO_(2)改性阴极扩散层对质子交换膜燃料电池性能的影响

采用水热法制备纳米CeO_(2)空心球,以一定比例与碳粉、PTFE混合,经超声震荡后均匀喷涂在经疏水处理过的碳纸表面上形成微孔层.将改性扩散层与传统扩散层进行比较,通过扫描电子显微镜、能谱测试分析、接触角、接触电阻表征,扩散层的物理性能几乎不会改变.再将扩散层组装成单电池进行一系列的电池性能测试,结果表明:掺杂CeO_(2)的阴极扩散层组装而成的单电池无论是电池性能、交流阻抗谱还是动态响应测试均优于传统扩散层组装的单电池.即证明了掺杂CeO_(2)制备的改性阴极扩散层由于其储放氧功能,可以加速氧气传质,增加催化剂表面氧分压,进而提升PEMFC的单电池的动态响应性能.

Tl-1223高温超导薄膜在蓝宝石单晶基片上的生长和性能研究

本文报道了采用射频磁控溅射法和快速升温烧结法在R面取向的蓝宝石单晶基片上生长CeO_(2)缓冲层和Tl-1223超导薄膜,研究了缓冲层生长情况和先驱膜后退火条件对超导薄膜结晶情况和超导特性的影响。AFM和XRD表征结果显示,蓝宝石基片经过退火后其表面形成具有光滑平台的台阶结构,同时基片的晶体质量得到了改善;本文所制备的CeO_(2)缓冲层和Tl-1223超导薄膜具有较好的c轴生长取向,而且两者呈现良好的ab面内织构。SEM表征结果显示,生长良好的Tl-1223超导薄膜呈层状结构,表面光滑平整、结构致密。在液氮环境下,测得所制备Tl-1223超导薄膜的临界转变温度Tc约为111 K,临界电流密度Jc(77 K,0 T)约为1.3 MA/cm2。

Research on CeO2 cap layer for YBCO-coated conductor

Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition （PLD） under the same conditions have been studied. Of them, one group is of CeO2 films, which are deposited on stainless steel （SS） tapes coated by IBAD-YSZ （IBAD-YSZ/SS）, and the other group is of CeO2/YSZ/Y2O3 multilayers, which are deposited on NiW substrates by PLD for the fabrication of YBCO-coated conductor through the RABiTS approach. YBCO film is then deposited on the tops of both types of buffer layers by PLD. The effects of the thickness of the CeO2 film on the texture of the CeO2 film and the critical current density （Jc） of the YBCO film are analysed. For the case of CeO2 film on IBAD-YSZ/SS, there appears a self-epitaxy effect with increasing thickness of the CeO2 film. For CeO2/YSZ/Y2O3/NiW, in which the buffer layers are deposited by PLD, there occurs no self-epitaxy effect, and the optimal thickness of CeO2 is about 50 nm. The surface morphologies of the two groups of samples are examined by SEM.

磁控溅射法制备的硫化镉缓冲层的铜锌锡硫薄膜太阳电池性能

利用磁控溅射法制备硫化镉薄膜,研究硫化镉薄膜作为缓冲层的铜锌锡硫薄膜太阳电池性能.进一步地,采用双功率溅射的方法,减轻溅射过程对吸收层的损伤,增加了铜锌锡硫薄膜太阳电池的开路电压和填充因子,提高了光电转换效率,最终获得了光电转换效率为7.0%的铜锌锡硫薄膜太阳电池.

NiW合金基带表面c(2×2)-S超结构的硫化处理

由于硫元素与氧元素化学特性相近,利用硫在Ni基带表面形成的c(2×2)-S超结构可以有效地控制氧化物缓冲层在Ni基带表面的织构.本研究提出将单质硫在120℃下挥发,利用单质硫在基带表面的吸附与脱附形成有序c(2×2)-S超结构的新技术路线.X光电子能谱(XPS)结果显示,采用新技术处理的金属基带表面有明显的硫元素,基带表面Ni和S的原子比例符合c(2×2)结构中S的覆盖度,即0.5的要求.在经过硫化处理后的NiW基带表面制备缓冲层,结果显示,新硫化处理技术改善了NiW基带表面的物理化学特性,有利于氧化物缓冲层的外延生长.

Morphology enhancement of SiO_(2)aerogel films grown on Si substrate using dense SiO_(2)buffer layer

Porous SiO_(2)film has been widely studied due to its extensive applications in many fields.This paper presents a newly produced porous SiO_(2)film made by traditional sol-gel method.Bare Si and Si with SiO_(2)buffer layer were used as substrate.The SiO_(2)buffer layer was 500 nm in thickness and was grown by thermal oxidization.The structural properties of SiO_(2)aerogel films spincoated on both materials were observed by optical microscope(OM)and scanning electron microscope(SEM).Results reveal that the surface of SiO_(2)aerogel films on bare Si is rough and discontinuous.While flat and smooth surface is observed on sample with SiO_(2)buffer layer.This indicates that by inserting SiO_(2)buffer layer,the structural property of SiO_(2)aerogel film deposited on Si is improved.

电泳沉积制备TiO_(2)纳米片作为钙钛矿太阳电池缓冲层

有机-无机杂化钙钛矿太阳电池自诞生以来,经过十几年的探索与发展,其认证效率由最初的3.8%发展为25.2%。界面问题一直是提升器件光电转换效率的关键。利用电泳沉积法制备TiO_(2)薄膜,以TiO_(2)纳米片为缓冲层制备钙钛矿太阳电池,研究TiO_(2)缓冲层对钙钛矿太阳电池(PSCs)的光电转换效率及载流子运输的影响。结果表明,相对于未加入缓冲层的PSCs,电池的光电转换效率由10.78%提升至12.71%。TiO_(2)缓冲层的加入有效地改善了界面接触问题,降低了电荷转移时的电阻,促进了载流子的运输,明显提高了钙钛矿太阳电池的光伏性能。

Effect of Precursor Molar Ratio of [S^2-]/[Zn^2＋] on Particle Size and Photoluminescence of ZnS：Mn^2＋ Nanocrystals

We investigate the influence of precursor molar ratio of [S^2-]/[Zn^2＋] on particle size and photoluminescence （PL） of ZnS：Mn^2＋ nanocrystMs. By changing the [S^2-]/[Zn^2＋] ratio from 0.6 （Zn-rich） to 2.0 （S-rich）, the particle size increases from nearly 2. 7nm to about 4.Ohm. The increase in the ratio of [S^2-]/[Zn^2＋] cadses a decrease of PL emission intensity of ZnS host while a distinct increase of Mn^2＋ emission. The maximum intensity for the luminescence of Mn^2＋ emission is observed at the ratio of [S^2-]/[Zn^2＋] ≈ 1.5. The possible mechanism for the results is discussed by filling of S^2- vacancies and the increase of Mn^2＋ ions incorporated into ZnS lattices.

Tunable Diode Laser Absorption Spectroscopy Detection of N2O at 2.1 μm Using Antimonide Laser and InGaAs Photodiode

Tunable diode laser absorption spectroscopy detection of N2 0 around 2.1 μm is demonstrated by using a homemade InGaAsSb/AlGaAsSb MQW laser diode and an InGaAs wavelength extended photodiode. Details of the devices and the detection system are described. In the system, the laser is driven by low frequency pulses with long duration to form a wavelength scan around 4741 cm^-1; the absorption information is obtained from the detected signal of the photodiode. By using a gas cell with 15cm path length, a detection limit is estimated to be smaller than 0.2 Torr.

Properties of Co-Doped 0.92（Na0.5Bi0.5） TiO3-0.08BaTiO3 Lead-Free Ceramics

Lead-free piezoelectric ceramics 0.92（Bi0.5Na0.5）TiO3-0.08BaTiO3 ＋ xmol% Co3＋ （BNBT-Co, x = 0-8） are prepared by the solid state reaction method. Effects of the amount of Co^3＋ on the electrical properties and phase transition are studied. The results indicate that the addition of Co^3＋ enhances the mechanical quality factor Q^3＋ significantly, whereas the dissipation factor tanδ has a minimum value at x = 3.5. Meanwhile, addition of Co^3＋ leads to small decreases of piezoelectric constant d33, and planar electromechanical coupling kp. The present 0.92（Bio.aNao.5） TiO3-0.08BaTiO3＋3.5 moi% Co^3＋ ceramics exhibit good performance with mechanical quality factor Qm = 910, piezoelectric constant d33 = 106pC/N, planar electromechanical coupling kp =10% and dissipation factor tanδ = 1.1% at 1 kHz. Saturated polarization hysteresis loops have been obtained for BNBT-Co ceramics. Two dielectric peaks at depolarization temperature Td and Tm appear in the curves of ε33^T vs temperature for the pure BNBT ceramics. However, the first dielectric peak Td disappears after the addition of Co^3＋, which means that the transition from ferroelectric to antiferroelectric phase has been eliminated.

Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2 μm

The subband energy and lasing wavelength of compressively strained triangular Ino.53Ga0.47As/InAs quantum well are calculated and compared with the conventional rectangular ones with the same strain contents. The strain compensation using Al0.33In0.36Ga0.31As barrier is introduced. The results show that lasing wavelength can be extended dramatically to beyond 2.8μm by changing the energy band from the conventional rectangular shape to a triangular one, the realization of such a structure using molecular beam epitaxy technology is also discussed.

An Electroluminescence Delay Time Model of Bilayer Organic Light-Emitting Diodes

Based on the mechanism of injection, transport and recombination of the charge carriers, we develop a model to calculate the delay time of electroluminescence （EL） from bilayer organic light emitting diodes. The effect of injection, transport and recombination processes on the EL delay time is discussed, and the relationship between the internal interface barrier and the recombination time is revealed. ＂]~he results show that the EL delay time is dominated by the recombination process at lower applied voltage and by the transport process at higher applied voltage. When the internal interface barrier varies from 0.15 eV to 0.3 eV, the recombination delay time increases rapidly~ while the internal interface barrier exceeds about 0.3eV~ the dependence of the recombination delay time on applied voltage is almost undiversified, which may serve as a guideline for designing of a high-speed EL response device.

Dielectric and Ferroelectric Properties of La-Doped SrBi2Nb2O9 Ceramics

Sr1-xLa2x/3Bi2Nb20O （0 ≤ x ≤0.2） ceramic samples are prepared by the solid-state reaction method. Their structure, dielectric and ferroelectric properties are investigated. The incorporation of La^3＋ improves the den- sification and decreases the grain size of the ceramics without changing the crystal structure. The remanent polarization 2PT increases with increasing La content and reaches a maximum value of 22.8μC/cm^2 at x = 0.125, which is approximately 60% larger than that of pure SrBi2Nb2O9. The Curie temperature keeps almost unchanged at a value of about 440℃. The relationship between doping and the ferroeleetrie and dielectric properties are discussed.