Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor(TFET) is considered as one of the most promising low-power devi...Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor(TFET) is considered as one of the most promising low-power devices that can simultaneously obtain low off-state current(IOFF), high on-state current(ION) and steep subthreshold swing(SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need.The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable.Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film,which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape(TRT) is proposed. Based on the method we proposed, the MoS_(2)/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS_(2) film with the relatively high crystal quality is confirmed by atomic force microscopy(AFM), scanning electron microscopy(SEM), and Raman characterizations. Besides, the prominent negative differential resistance(NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS_(2)/Si heterojunction. The bilayer MoS_(2)/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.展开更多
High-performance gas sensing materials operated at room temperature(RT) are attractive for a variety of real-time gas monitoring applications,especially with the excellent durability and flexibility of wearable sensor...High-performance gas sensing materials operated at room temperature(RT) are attractive for a variety of real-time gas monitoring applications,especially with the excellent durability and flexibility of wearable sensor.The constructing heterostructure is one of the significant approaches in design strategies of sensing materials.This heterostructure effectively increases the active site for improving sensing performance and decreasing energy consumption.Herein,the heterostructure of Au nanoparticles modified CeO_(2)@carbon-quantum-dots(Au/CeO_(2)@CQDs) with a three-dimensional(3D) scaffold structure are successfully synthesized by an effective strategy,which can apply for preparing flexible gas sensor.The gas sensing properties of Au/CeO_(2)@CQDs based on flexible substrate are obtained under long-term repeated NO_(2) exposure at RT.Meanwhile,the long-term mechanical stability of this gas sensing device is also detected after different bending cycles.The Au/CeO_(2)@CQDs based on flexible substrate sensor exhibits excellent performance,including higher sensitivity(47.2),faster response(18 s)and recovery time(22 s) as well as longer-term stability than performance of pure materials.The obtained sensor also reveals outstanding mechanical flexibility,which is only a tiny response fluctuation(8.1%) after 500 bending/relaxing cycles.Therefore,our study demonstrates the enormous potential of this sensing materials for hazardous gas monitoring in future portable and wearable sensing platform.展开更多
In this paper, a charge sheet surface potential based model for strained-Si nMOSFETs is presented and validated with numerical simulation. The model considers sub band splitting in the 2-DEG at the top heterointerface...In this paper, a charge sheet surface potential based model for strained-Si nMOSFETs is presented and validated with numerical simulation. The model considers sub band splitting in the 2-DEG at the top heterointerface in SiGe layer and also the dependence of electron concentration at heterointerface with the gate oxide. The model is scalable with strained-Si material parameters with physically derived flat-band voltages. An explicit relation for surface potential as a function of terminal voltages is developed. The model is derived from regional charge-based approach, where regional solutions are physically derived. The model gives an accurate description of drain current both in the weak and strong inversion regions of operation. The results obtained from the model developed are benchmarked with commercial numerical device simulator and is found to be in excellent agreement.展开更多
Integration of molybdenum disulfide （MoS2） onto high surface area photocathod is highly desired to minimize the overpotential for the solar-powered hydrogen evolution reaction （HER）. Semiconductor nanowires （NWs...Integration of molybdenum disulfide （MoS2） onto high surface area photocathod is highly desired to minimize the overpotential for the solar-powered hydrogen evolution reaction （HER）. Semiconductor nanowires （NWs） are beneficial use in photoelectrochemistry because of their large electrochemically availab surface area and inherent ability to decouple light absorption and the transpo of minority carriers. Here, silicon （Si） NW arrays were employed as a mod photocathode system for MoS2 wrapping, and their solar-driven HER activil was evaluated. The photocathode is made up of a well-defined MoSJTiO2/Si coaxial NW heterostructure, which yielded photocurrent density up to 15 mA/cm2 （at 0 V vs. the reversible hydrogen electrode （RHE）） with goo stability under the operating conditions employed. This work reveals the earth-abundant electrocatalysts coupled with high surface area NW electrod~ can provide performance comparable to noble metal catalysts for photocathod hydrogen evolution.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No.61851405)。
文摘Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor(TFET) is considered as one of the most promising low-power devices that can simultaneously obtain low off-state current(IOFF), high on-state current(ION) and steep subthreshold swing(SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need.The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable.Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film,which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape(TRT) is proposed. Based on the method we proposed, the MoS_(2)/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS_(2) film with the relatively high crystal quality is confirmed by atomic force microscopy(AFM), scanning electron microscopy(SEM), and Raman characterizations. Besides, the prominent negative differential resistance(NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS_(2)/Si heterojunction. The bilayer MoS_(2)/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.
基金financially supported by the Natural Science Foundation of Shandong Province (Nos. ZR2021QB136 and ZR2022MH091)the Innovation and Entrepreneurship Training Program for Undergraduates of Shandong Province (No.S202110439100)+2 种基金Tai'an Science and Technology Innovation Development Project (No.2021GX068)the Academic Promotion Program of Shandong First Medical University (No. 2019QL008)the Chinese Academy of Sciences。
文摘High-performance gas sensing materials operated at room temperature(RT) are attractive for a variety of real-time gas monitoring applications,especially with the excellent durability and flexibility of wearable sensor.The constructing heterostructure is one of the significant approaches in design strategies of sensing materials.This heterostructure effectively increases the active site for improving sensing performance and decreasing energy consumption.Herein,the heterostructure of Au nanoparticles modified CeO_(2)@carbon-quantum-dots(Au/CeO_(2)@CQDs) with a three-dimensional(3D) scaffold structure are successfully synthesized by an effective strategy,which can apply for preparing flexible gas sensor.The gas sensing properties of Au/CeO_(2)@CQDs based on flexible substrate are obtained under long-term repeated NO_(2) exposure at RT.Meanwhile,the long-term mechanical stability of this gas sensing device is also detected after different bending cycles.The Au/CeO_(2)@CQDs based on flexible substrate sensor exhibits excellent performance,including higher sensitivity(47.2),faster response(18 s)and recovery time(22 s) as well as longer-term stability than performance of pure materials.The obtained sensor also reveals outstanding mechanical flexibility,which is only a tiny response fluctuation(8.1%) after 500 bending/relaxing cycles.Therefore,our study demonstrates the enormous potential of this sensing materials for hazardous gas monitoring in future portable and wearable sensing platform.
文摘In this paper, a charge sheet surface potential based model for strained-Si nMOSFETs is presented and validated with numerical simulation. The model considers sub band splitting in the 2-DEG at the top heterointerface in SiGe layer and also the dependence of electron concentration at heterointerface with the gate oxide. The model is scalable with strained-Si material parameters with physically derived flat-band voltages. An explicit relation for surface potential as a function of terminal voltages is developed. The model is derived from regional charge-based approach, where regional solutions are physically derived. The model gives an accurate description of drain current both in the weak and strong inversion regions of operation. The results obtained from the model developed are benchmarked with commercial numerical device simulator and is found to be in excellent agreement.
文摘Integration of molybdenum disulfide （MoS2） onto high surface area photocathod is highly desired to minimize the overpotential for the solar-powered hydrogen evolution reaction （HER）. Semiconductor nanowires （NWs） are beneficial use in photoelectrochemistry because of their large electrochemically availab surface area and inherent ability to decouple light absorption and the transpo of minority carriers. Here, silicon （Si） NW arrays were employed as a mod photocathode system for MoS2 wrapping, and their solar-driven HER activil was evaluated. The photocathode is made up of a well-defined MoSJTiO2/Si coaxial NW heterostructure, which yielded photocurrent density up to 15 mA/cm2 （at 0 V vs. the reversible hydrogen electrode （RHE）） with goo stability under the operating conditions employed. This work reveals the earth-abundant electrocatalysts coupled with high surface area NW electrod~ can provide performance comparable to noble metal catalysts for photocathod hydrogen evolution.
