Several thin films of Te10Ge10Se77Sb3 chalcogenide glass of different thicknesses (250 nm to 400 nm) were prepared by thermalevaporation under vacuum of 133×10-6 Pa (10-6torr). X- ray diffraction analysis showed ...Several thin films of Te10Ge10Se77Sb3 chalcogenide glass of different thicknesses (250 nm to 400 nm) were prepared by thermalevaporation under vacuum of 133×10-6 Pa (10-6torr). X- ray diffraction analysis showed the amorphicity of the preparedfilms which become partially crystalline by annealing. Transmittance and reflectance measurements in the spectral range of200 nm to 2500 nm have been carried out at normal incidence. The analysis of the absorption coefficient data showed theexistence of indirect transition for the photon energy E in the range 1~3 eV and direct transition for E >3 eV. From thedetermination of the optical constants (n, k), the dispersion of the refractive index has anomalous behaviour in the region ofthe fundamental absorption edge, and followed by the single- effective oscillator approach.The investigated optical parameterssuch as the optical energy gap Eopt, the high frequency dielectric constant εoo, the oscillator position λo, and the oscillatorstrength So, were significantly affected by the film thickness. The characteristic energy gap obtained from the conductivitymeasurements is nearly half the value of that obtained from the optical data as in the case of thickness 400 nm. The activationenergy is 0.65 eV and the indirect optical gap is 1.32 eV.展开更多
Chalcogenide glasses （ChGs） are a promising candidate for applications in nonlinear photonic devices. In this paper, we review the research progress of the third-order optical nonlinearity （TONL） of ChGs from the ...Chalcogenide glasses （ChGs） are a promising candidate for applications in nonlinear photonic devices. In this paper, we review the research progress of the third-order optical nonlinearity （TONL） of ChGs from the following three aspects： chemical composition, excitation condition, and post processing. The deficiencies in previous studies and further research of the TONL property of ChGs are also discussed.展开更多
Dy^3＋-doped Ge-Ga-Se chalcogenide glasses and GeSe2-Ga2Se3-CsI chalcohalide glasses were prepared. The absorption, emission properties, and local structure of the glasses were investigated. When excited at 808 nm dio...Dy^3＋-doped Ge-Ga-Se chalcogenide glasses and GeSe2-Ga2Se3-CsI chalcohalide glasses were prepared. The absorption, emission properties, and local structure of the glasses were investigated. When excited at 808 nm diode laser, intense 1.32 and 1.55 μm near-infrared luminescence were observed with full width at half maximum （FWHM） of about 90 and 50 nm, respectively. The lifetime of the 1.32 μm emission varied due to changes in the local structure surrounding Dy^3＋ ions. The longest lifetime was over 2.5 ms, and the value was significantly higher than that in other Dy^3＋-doped glasses. Some other spectroscopic parameters were calculated by using Judd-Ofelt theory. Meanwhile, Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses showed good infrared transmittance. As a result, Dy^3＋-doped Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses were believed to be useful hosts for 1.3 μm optical fiber amplifier.展开更多
Quaternary Ge-Sb-Se-Te chalcogenide thin films were fabricated by rf magnetron sputtering from Ge_(19)Sb_(17)Se_(64-x)Te_(x)(x=5,10,15,20)sputtering targets in order to select appropriate compositions for infrared sen...Quaternary Ge-Sb-Se-Te chalcogenide thin films were fabricated by rf magnetron sputtering from Ge_(19)Sb_(17)Se_(64-x)Te_(x)(x=5,10,15,20)sputtering targets in order to select appropriate compositions for infrared sensor and optical nonlinear applications.An influence of chemical composition and deposition parameters on the optical properties,structure and wettability was thus studied.The amorphous thin films seem to be constituted by selenide entities that can include tellurium atoms in variable proportion such as[GeSe_(4-x)Te_(x)]and[SbSe_(3-x)Te_(x)](x=0,1,2)and Ge(Sb)-Ge(Sb)bonds according to Raman spectroscopy.Contact angle measurements of the thin films showed values of 68e71for water and their surface energies in the range of~36e39 mJ$m-2 seem suitable for surface functionalization required for photonic sensor development.Furthermore,the maximum nonlinearity at the telecom wavelength with respect to the highest figure of merit value was found for the thin film with composition Ge_(19)Sb_(17)Se56Te8 having nonlinear refractive index of 28×10^(-18) m2·W^(-1).Due to their low optical bandgap energies,they may find their full interest for nonlinear optics in the mid-infrared range.Wide IR transparency in combination with high(non)linear refractive indices make these materials attractive in the field of midIR sensing and optical nonlinear devices.展开更多
文摘Several thin films of Te10Ge10Se77Sb3 chalcogenide glass of different thicknesses (250 nm to 400 nm) were prepared by thermalevaporation under vacuum of 133×10-6 Pa (10-6torr). X- ray diffraction analysis showed the amorphicity of the preparedfilms which become partially crystalline by annealing. Transmittance and reflectance measurements in the spectral range of200 nm to 2500 nm have been carried out at normal incidence. The analysis of the absorption coefficient data showed theexistence of indirect transition for the photon energy E in the range 1~3 eV and direct transition for E >3 eV. From thedetermination of the optical constants (n, k), the dispersion of the refractive index has anomalous behaviour in the region ofthe fundamental absorption edge, and followed by the single- effective oscillator approach.The investigated optical parameterssuch as the optical energy gap Eopt, the high frequency dielectric constant εoo, the oscillator position λo, and the oscillatorstrength So, were significantly affected by the film thickness. The characteristic energy gap obtained from the conductivitymeasurements is nearly half the value of that obtained from the optical data as in the case of thickness 400 nm. The activationenergy is 0.65 eV and the indirect optical gap is 1.32 eV.
基金Project supported by the National Natural Science Foundation of China(Grant No.61675106)the National Key Research and Development Program of China(Grant No.2016YFB0303803)the K C Wong Magna Fund in Ningbo University
文摘Chalcogenide glasses （ChGs） are a promising candidate for applications in nonlinear photonic devices. In this paper, we review the research progress of the third-order optical nonlinearity （TONL） of ChGs from the following three aspects： chemical composition, excitation condition, and post processing. The deficiencies in previous studies and further research of the TONL property of ChGs are also discussed.
基金supported by the China’s Manned Space Program (921-21 Project)
文摘Dy^3＋-doped Ge-Ga-Se chalcogenide glasses and GeSe2-Ga2Se3-CsI chalcohalide glasses were prepared. The absorption, emission properties, and local structure of the glasses were investigated. When excited at 808 nm diode laser, intense 1.32 and 1.55 μm near-infrared luminescence were observed with full width at half maximum （FWHM） of about 90 and 50 nm, respectively. The lifetime of the 1.32 μm emission varied due to changes in the local structure surrounding Dy^3＋ ions. The longest lifetime was over 2.5 ms, and the value was significantly higher than that in other Dy^3＋-doped glasses. Some other spectroscopic parameters were calculated by using Judd-Ofelt theory. Meanwhile, Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses showed good infrared transmittance. As a result, Dy^3＋-doped Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses were believed to be useful hosts for 1.3 μm optical fiber amplifier.
基金The Natural Science Foundation of China(Nos.6143500961177087+7 种基金61377099)National Program on Key Basic Research Project(973 Program)(No.2012CB722703)International Science&Technology Cooperation Program of China(No.2011DFA12040)Scientific Research Fund of Zhejiang Provincial Education Department(No.R1101263)Natural Science Foundation of Ningbo(No.2013A610118)Teaching and Research Award Program for Outstanding Young Teachers in Higher Education Institutions of MOE,P.R.C.Ningbo Optoelectronic Materials and Devices Creative Team(No.2009B21007)Scientific Research Foundation of Graduate School of Ningbo University,K.C.Wong Magna Fund of Ningbo University and the Outstanding(No.Postgraduate)Dissertation Growth Foundation of Ningbo University(No.PY2014014)
基金This work was financially supported by the Programfor Changjiang Scholars and Innovative Research Team(PCSIRT,No.IRT0547),Ministry of Education,China
基金This work was supported by the CNRS,Brittany region(France)ANR LOUISE(ANR-15-CE04-0001-01)+1 种基金ANR AQUAE(ANR-21-CE04-0011)Czech Science Foundation(Project No.19-24516S).
文摘Quaternary Ge-Sb-Se-Te chalcogenide thin films were fabricated by rf magnetron sputtering from Ge_(19)Sb_(17)Se_(64-x)Te_(x)(x=5,10,15,20)sputtering targets in order to select appropriate compositions for infrared sensor and optical nonlinear applications.An influence of chemical composition and deposition parameters on the optical properties,structure and wettability was thus studied.The amorphous thin films seem to be constituted by selenide entities that can include tellurium atoms in variable proportion such as[GeSe_(4-x)Te_(x)]and[SbSe_(3-x)Te_(x)](x=0,1,2)and Ge(Sb)-Ge(Sb)bonds according to Raman spectroscopy.Contact angle measurements of the thin films showed values of 68e71for water and their surface energies in the range of~36e39 mJ$m-2 seem suitable for surface functionalization required for photonic sensor development.Furthermore,the maximum nonlinearity at the telecom wavelength with respect to the highest figure of merit value was found for the thin film with composition Ge_(19)Sb_(17)Se56Te8 having nonlinear refractive index of 28×10^(-18) m2·W^(-1).Due to their low optical bandgap energies,they may find their full interest for nonlinear optics in the mid-infrared range.Wide IR transparency in combination with high(non)linear refractive indices make these materials attractive in the field of midIR sensing and optical nonlinear devices.
