Influence of channel length on discharge performance of anode layer Hall thruster studied by particle-in-cell simulation

Hall thruster has the advantages of simple structure, high specific impulse, high efficiency, and long service life, and so on. It is suitable for spacecraft attitude control, North and South position keeping, and other track tasks. The anode layer Hall thruster is a kind of Hall thruster. The thruster has a longer anode area and a relatively short discharge channel. In this paper, the effect of the channel length on the performance of the anode layer Hall thruster is simulated by the PIC simulation method. The simulation results show that the change of the channel length has significant effect on the plasma parameters, such as potential and plasma density and so on. The ionization region mainly concentrates at the hollow anode outlet position, and can gradually move toward the channel outlet as the channel length decreases. The collision between the ions and the wall increases with the channel length increasing. So the proper shortening of the channel length can increase the life of the thruster. Besides, the results show that there is a best choice of the channel length for obtaining the best performance. In this paper, thruster has the best performance under a channel length of 5 mm.

Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor

The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extremely high transit frequency,the graphene field effect transistor shows outstanding performance.From the transfer curve,it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior.Besides,it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2μm and 5μm respectively.Furthermore,an approximate symmetrical capacitance-voltage(C-V)characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width.In addition,a high transconductance,that demands high-speed radio frequency(RF)applications,of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better.Moreover,the channel length dependence on NBTI is more serious than that on PBTI.Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is proposed.Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs.The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.

Shot Noise Suppression in a Quantum Point Contact with Short Channel Length

An experimental study on the current shot noise of a quantum point contact with short channel length is reported. The experimentally measured maximum energy level spacing between the ground and the first excited state of the device reached up to 7.5meV, probably due to the hard wall confinement by using shallow electron gas and sharp point contact geometry. The two-dimensionM non-equilibrium shot noise contour map shows noise suppression characteristics in a wide range of bias voltage. Fano factor analysis indicates spin-polarized transport through a short quantum point contact.

Effective Channel Length Degradation under Hot-Carrier Stressing

This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the linear region. The transconductance characteristics are determine for the several devices of difference drawn channel length. The effective channel length of submicron LDD （Lightly Doped Drain） NMOSFETs （Metal Oxide Semiconductor Field Effect Transistor） under hot carrier stressing was measured at the stress time varying from zero to 10,000 seconds. It is shown that the effective channel length was increased with time. This is caused by charges trapping in the oxide during stress. The increased of effective channel length （△Leff） is seem to be increased sharply as the gate channel length is decrease.

Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs

The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.

Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS

Contrary to general understanding, a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process. Such a phenomenon in a gate-grounded NMOSFET （GGNMOS） was investigated, and the current spreading effect was verified as the predominant factor. Due to transmission line pulse （TLP） measurements and Sentaurus technology computer aided design （TCAD） 2-D numerical simulations, parameters such as current gain, on-resistance and power density were discussed in detail.

Theoretical Study of Fully Developed Turbulent Flow in a Channel, Using Prandtl’s Mixing Length Model

This research used the common decomposition of the velocity and pressure in an average part and a fluctuating part, for high Reynolds number, of the Navier-Stokes equation, which leads to the classic problem of turbulent closure. The Prandtl’s mixing length model, based on the Boussinesq hypothesis and traditionally used for free shear flows, was chosen and adapted for internal flows to solve the closure problem. For channel flows, Johann Nikuradse proposed a model for the Prandtl mixing length. In the present paper, which has an academic character, the authors made a return to the model of the mixing length of Prandtl and the model of Nikuradse, to solve turbulent flows inside a plane channel. It was possible to develop an ordinary differential model for the velocity in the direction of the flow whose solution occurs computationally in a simple but extremely accurate way when compared with Direct Numerical Simulation databases. For the viscous stress on the wall, it was possible to determine the exact mathematical solution of the ordinary differential equation. It is a model of great academic value and even to be used as reference for verification of computational codes destined to the solution of complete numerical and computational models.

Proposed Equation to Estimate the Length of a Hydraulic Jump in a Rectangular Open Channel Hydraulic with Variable Slope, and Its Comparison with Seven Theoretical Equations of Specialized Literature

A hydraulic jump is a localized phenomenon that generates on an open hydraulic channel;however, its mathematical demonstration is not possible in the turbulent area of the phenomenon, especially in the area where the jump occurs and where its length is measured, so the data must be obtained with direct measurements in a laboratory and through empiric equations. This work presents the results of the generated hydraulic jumps and the measure of its length in a series of tests, where we input different flow rates in a transportable open channel hydraulic with a constant gate opening “a” and a slope of S = 0.0035, in the Engineering Faculty Research Centre of the Autonomous University of Chiapas. We also present the experimental method to generate a hydraulic jump, the measure of its length and a comparison with seven empirical equations, including the Sieñchi equation used in H-Canales, the most used software for hydraulic channels design in Latin America. The results show that the calculus of L with the proposed equation has a mean squared error (MSE) of 0.1337, a Bias of -0.0049, a model efficiency (ME) of 0.9991 and a determination coefficient (R2) of 0.9993 when compared with the experimental model. Meanwhile, the comparison of L calculated with the Sieñchi equation versus the experimental model resulted in a MSE of 0.1741, a bias of -0.0437, a ME of 0.9984 and a R2 of 0.9997. Both equations are highly recommended to estimate L in rectangular channels under the conditions presented in this paper, thus, the proposed equation can be applied if??y . Finally, it must be stated that we also proved that the Pavlosky equation is comparable in precision and accuracy concerning to proposed equation and Sieñchi equation.

Integrated Joint Source-Channel Symbol-by-Symbol Decoding of Variable-Length Codes Using 3-D MAP Sequence Estimation

Most of multimedia schemes employ variable-length codes （VLCs） like Huffman code as core components in obtaining high compression rates. However VLC methods are very sensitive to channel noise. The goal of this paper is to salvage as many data from the damaged packets as possible for higher audiovisual quality. This paper proposes an integrated joint source-channel decoder （I-JSCD） at a symbol-level using three-dimensional （3-D） trellis representation for first-order Markov sources encoded with VLC source code and convolutional channel code. This method combines source code and channel code state-spaces and bit-lengths to construct a two-dimensional （2-D） state-space, and then develops a 3-D trellis and a maximum a-posterior （MAP） algorithm to estimate the source sequence symbol by symbol. Experiment results demonstrate that our method results in significant improvement in decoding performance, it can salvage at least half of （50%） data in any channel error rate, and can provide additional error resilience to VLC stream like image, audio, video stream over high error rate links.

Crosstalk and Wire Length Reduction in the Non-Manhattan Channel Routing

A novel framework for non-Manhattan channel routing considering crosstalk and wire length reduction is proposed. To handle crosstalk and wire length reduction problem, an improved non-Manhattan router in the gridded routing model is developed, and a novel rerouting algorithm based on segment-rerouting technique and layer reassignment is presented. Simulation exDeriments demonstrate that our algorithm achieves verv good results.

Scaling of the bubble/slug length of Taylor flow in a meandering microchannel

In order to reduce or avoid the fluctuations from interface breakup, a meandering microchannel with curved multi-bends(44 turns) is fabricated, and investigations of scaling bubble/slug length in Taylor flow in a rectangular meandering microchannel are systematically conducted. Based on considerable experimental data,quantitative analyses for the influences of two important characteristic times, liquid phase physical properties and aspect ratio are made on the prediction criteria for the bubble/slug length of Taylor flow in a meandering microchannel. A simple principle is suggested to predict the bubble formation period by using the information of Rayleigh time and capillary time for six gas–liquid systems with average deviation of 10.96%. Considering physical properties of the liquid phase and cross-section configuration of the rectangular mcirochannel,revised scaling laws for bubble length are established by introducing Ca, We, Re and W/h whether for the squeezing-driven or shearing-driven of bubble break. In addition, a simple principle in terms of Garstecki-type model and bubble formation period is set-up to predict slug lengths. A total of 107 sets of experimental data are correlated with the meandering microchannel and operating range: 0.001 b CaTPb 0.05, 0.06 b WeTPb 9.0,18 b ReTPb 460 using the bubble/slug length prediction equation from current work. The average deviation between the correlated data and the experimental data for bubble length and slug length is about 9.42% and9.95%, respectively.

脉冲放电破岩等离子体通道长度预测方法

针对高压脉冲放电破岩电弧等离子体通道长度难以预测的问题,构建了高压脉冲放电破岩综合试验平台,测量了花岗岩-自来水组合介质下电弧等离子体通道发展特性及典型电流、电压参数,提取了不同电极间距和脉冲放电次数下岩石表面形成的破碎区域。基于能量平衡方程建立了岩石中电弧等离子体通道的阻抗模型,采用迭代优化算法获取阻抗模型参数的近似最优解,模型计算结果与试验结果的相对误差小于7%。基于优化参数,利用实测电流电压数据预测了等离子体通道的长度。模型预测的等离子体通道长度与实测值的绝对误差均处于毫米量级,且两者的相对误差小于10%,为高压脉冲放电破岩系统电源-电极负载的匹配设计提供了理论支撑。

基于概率球面判别分析的说话人识别信道补偿算法

在说话人识别任务中,概率线性判别分析(PLDA)模型是目前常用的分类后端,但由于高斯PLDA模型分布假设不能准确拟合真实说话人特征分布,导致基于高斯分布假设长度归一化的信道补偿方法会破坏说话人特征类内分布的独立性,使得高斯PLDA不能充分利用上游任务提取特征所包含的说话人信息,从而影响识别结果。针对这一问题,提出基于概率球面判别分析的信道补偿算法(CC-PSDA),通过引入冯·米塞斯-费希尔(VMF)分布假设的概率球面判别分析模型(PSDA)和特征变换方法代替高斯分布假设的概率线性判别分析方法,以避免信道补偿对说话人特征类内分布独立性的影响。首先,为了使说话人特征符合VMF分布先验假设拟合后端分类模型,在特征级利用非线性转换对说话人特征进行分布变换。之后,利用基于VMF分布假设的PLDA模型不会破坏说话人特征的类内分布结构的特点,将变换后的说话人特征定义到特定维度的超球面,最大化特征类间距离。所提算法通过期望最大化(EM)算法进行求解,最终完成分类任务。实验结果表明,改进算法在三个测试集上的识别等错误率相较于对比模型PSDA、高斯PLDA均最低。由此可见,所提模型可以有效区分说话人特征,提高识别性能。

1000V 4H-SiC VDMOS结构设计与特性研究

设计并优化了一种基于4H-SiC的1000V垂直双扩散金属氧化物半导体场效应晶体管(VDMOS),在留有50%的裕度后,通过Silvaco仿真软件详细研究了器件各项参数与耐压特性之间的关系。经优化,器件的阈值电压为2.3V,击穿电压达1525V,相较于相同耐压条件下的Si基VDMOS,4H-SiC VDMOS的击穿电压提升了12%。此外,击穿时4H-SiC VDMOS表面电场分布相对均匀,最大值为3.4×10^(6)V/cm。终端有效长度为15μm,约为Si基VDMOS的6%,总体面积减小了近1/10。并且4H-SiC VDMOS结构简单,与相同耐压条件下的Si基VDMOS相比,未增加额外的工艺步骤,易于实现。

基于深层神经网络的信道编码类型盲识别

为了解决当前识别算法只能识别一种或者两种码字类型以及人工提取特征复杂的问题,提出了两种基于深层神经网络模型的信道编码类型识别器,即卷积神经网络(convolutional neural network,CNN)识别器和递归CNN(recursive CNN,RCNN)识别器,用于识别接收数据中不同类型的信道码字。将待识别的软解调序列作为自然语言处理中文本分类问题的句子向量进行处理,输入到预先训练好的深层神经网络识别器中进行识别,并分析了字长度对识别准确率的影响,得出了最合适的字长度。实验结果表明,两种识别器都能够有效识别接收数据中多种类型的信道编码,且在信噪比为3 dB时CNN识别器的识别准确率能够达到99%以上,而RCNN识别器在1 dB时就能够达到99%以上的识别准确率。

滨里海盆地东缘北特鲁瓦油田石炭系碳酸盐岩储层裂缝网络连通性评价

基于岩心、成像测井及裂缝网络建模结果,应用拓扑学理论,对滨里海盆地东缘北特鲁瓦油田石炭系碳酸盐岩储层裂缝网络的连通性进行了评价,并分析了其对油田开发的影响。研究结果表明:(1)滨里海盆地东缘北特鲁瓦油田石炭系碳酸盐岩储层裂缝切割类型可划分为高高切割、高低切割和低低切割,研究区A2,A3,G1,G2,G3及G4小层裂缝切割较为发育,且主要分布在构造高部位。(2)裂缝网络连通性可通过连通体面积占比、裂缝体密度、裂缝的平均长度和平均节点数4个参数进行定量评价,根据连通体面积大小、裂缝体密度大小及裂缝类型可对裂缝连通体进行定性分析和命名,研究区A2小层主要发育低低大连通体、高中大连通体和高高大连通体。(3)裂缝网络连通性和储层物性的耦合作用是油田水窜的原因,裂缝网络连通性主要与裂缝长度和裂缝体密度有关。

The Estimation Method of Channel Quality

On the basis of the introduction about water saving irrigation that works as a kind of new irrigation pattern,the method of anti-seep quality estimation of the conveying water and distributing channel which acts as an important engineering measure of water saving irrigation will be introduced in te paper.that is,by means of unit length of channel's water utilization coefficient(η 0)to estimate the quality of channel,and the calculative method has been explained by the example of an actual project.It can be referred to irrigational workers.

语义通信的数学理论

自从1948年经典信息论诞生以来,在其指导下,现代通信技术已经逼近了理论性能极限,例如信息熵H(U)、信道容量C=max_(p(x))I(X;Y)以及率失真函数R(D)=min_(p(x|x):Ed(x,x)≤D)I(X;X)。长期以来,由于经典信息论只研究语法信息,限制了通信科学的进一步发展。近年来,研究语义信息处理与传输的通信技术获得了学术界的普遍关注,语义通信开辟了未来通信技术发展的新方向,但还缺乏一般性的数学指导理论。为了解决这一难题,构建了语义信息论的理论框架,对语义信息的度量体系与语义通信的理论极限进行了系统性阐述。首先,通过深入分析各类信源的数据特征,以及各种下游任务的需求,总结归纳出语义信息的普遍属性——同义性。由此指出语义信息是语法信息的上级概念,是许多等效或相似语法信息的抽象特征,表征隐藏在数据或消息背后的含义或内容。将语义信息与语法信息之间的关系命名为同义映射,这是一种“一对多”映射,即一个语义符号可以由许多不同的语法符号表示。基于同义映射f这一核心概念,引入语义熵H_(s)(U)作为语义信息的基本度量指标,表示为信源概率分布与同义映射的泛函。在此基础上,引入上/下语义互信息I^(s)(X;Y)(I_(s)(X;Y)),语义信道容量C_(s)=max_(f_(xy))max_(p_((x)))I^(s)(X;Y)以及语义率失真函数R_(s)(D)=min_({f_(x),f_(x)})min_(p(x|x):Ed_(s)(x,x)≤D)I_(s)(X;X),从而构建了完整的语义信息度量体系。这些语义信息度量是经典信息度量的自然延伸,都由同义映射约束,如果采用“一对一”映射,则可以退化为传统的信息度量。由此可见,语义信息度量体系包含语法信息度量,前者与后者具有兼容性。其次,证明了3个重要的语义编码定理,以揭示语义通信的性能优势。基于同义映射,引入新的数学工具——语义渐近均分(AEP),详细探讨了同义典型序列的数学性质,并应用随机编码和同义典型序列译码/编码,证明了语义无失真信源编码定理、语义信道编码定理和语义限失真信源编码定理。类似于经典信息论,这些基本编码定理也都是存在性定理,但它们指出了语义通信系统的性能极限,在语义信息论中起着关键作用。由同义映射和这些基本编码定理可以推断,语义通信系统的性能优于经典通信系统,即语义熵小于信息熵H_(s)(U)≤H(U),语义信道容量大于经典信道容量C_(s)≥C,以及语义率失真函数小于经典率失真函数R_(s)(D)≤R(D)。最后,讨论了连续条件下的语义信息度量。此时,同义映射转换为连续随机变量分布区间的划分方式。相应地,划分后的子区间被命名为同义区间,其平均长度定义为同义长度S。特别是对于限带高斯信道,得到了一个新的信道容量公式C_(s)=B log[S^(4)(1+P/N_(0)B)],其中,平均同义长度S表征了信息的辨识能力。这一容量公式是经典信道容量的重要扩展,当S=1时,该公式退化为著名的香农信道容量公式。综上所述,语义信息论依据同义映射这一语义信息的本质特征,构建了语义信息的度量体系,引入新的数学工具,证明了语义编码的基本定理,论证了语义通信系统的性能极限,揭示了未来语义通信的巨大性能潜力。

Optimization of laser focused atomic deposition by channeling

Laser focused atomic deposition is a unique and effective way to fabricate highly accurate pitch standards in nanometrology.However,the stability and repeatability of the atom lithography fabrication process remains a challenging problem for massive production.Based on the atom-light interaction theory,channeling is utilized to improve the stability and repeatability.From the comparison of three kinds of atom-light interaction models,the optimal parameters for channeling are obtained based on simulation.According to the experimental observations,the peak to valley height of Cr nano-gratings keeps stable when the cutting proportion changes from 15%to 50%,which means that the channeling shows up under this condition.The channeling proves to be an effective method to optimize the stability and repeatability of laser focused Cr atomic deposition.