Charge transfer efficiency improvement of a 4-T pixel by the optimization of electrical potential distribution under the transfer gate

The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan- nel is introduced to provide an ascending electrical potential gradient in the transfer transistor channel. With the adjustments to the overlap length between the R1 region and the transfer gate, the doping dose of the R1 region, and the overlap length between the anti-punch-through （APT） implantations and transfer gate, the potential barrier and potential pocket in the connecting region of transfer transistor channel and the pinned photodiode （PPD） are reduced to improve the electrical potential connection. The simulation results show that the percentage of residual charges to total charges drops from 1/10^4 to 1/10^7, and the transfer time is reduced from 500 to 110 ns. This means the charge transfer efficiency is improved.

Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate(OG)and the temporary storage diffusing(TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node(FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications.

Review on heterophase/homophase junctions for efficient photocatalysis: The case of phase transition construction

Semiconductor photocatalysts are extensively applied in environmental treatment and energy conversion.However,one of their major disadvantages is their relatively low photocatalytic performance owing to the recombination of generated electron-hole pairs.The presence of the phase junction is an effective way to promote the photocatalytic activity by increasing the separation efficiency of the electron-hole pairs.Accordingly,extensive research has been conducted on the design of phase junctions of photocatalysts to improve their charge transfer properties and efficiencies.Therefore,for the design of an appropriate phase junction and the understanding of the mechanism of electron-hole separation,the development of the photocatalytic phase junction,including the preparation methods of the heterogeneous materials,is tremendously important and helpful.Herein,the commonly used,externally induced phase transformation fabrication techniques and the primary components of the semiconductors are reviewed.Future directions will still focus on the design and optimization of the phase junction of photocatalytic materials according to the phase transition with higher efficiencies for broadband responses and solar energy utilization.Additionally,the most popular phase transformation fabrication techniques of phase junctions are briefly reviewed from the application viewpoint.

D-A structured high efficiency solid luminogens with tunable emissions： Molecular design and photophysical properties

Fabrication of efficient solid luminogens with tunable emission is both fundamentally significant and technically important. Herein, based on our previous strategy for the construction of efficient and multifunctional solid luminogens through the combination of diverse aggregation-induced emission （ALE） units with other functional moieties, a group of luminophores with electron donor-acceptor （D-A） structure and typical intramolecular charge transfer （ICT） characteristics, namely CZ-DCDPP, DPA-DCDPP and DBPA-DCDPP were synthesized and investigated. The presence of twisting and AlE-active 2,3- dicyano-S,6-diphenylpyrazine （DCDPP） moiety endows them highly emissive in the solid states, whereas the introduction of arylamines with varied electron-donating capacity and different conjugation render them with tunable solid emissions from green to red. While CZ-DCDPP and DPA-DCDPP solids exhibit distinct mechanochromism, both DPA-DCDPP and DBPA-DCDPP solids can generate efficient red emission. Owing to their high efficiency, remarkable thermal and morphological stabilities and moreover red emission, they are promising for diverse optoelectronic and biological applications.

An ultrafast carrier dynamics system from oxygen vacancies modified SnO_(2)QDs and Zn_(2)SnO_(4)heterojunction for deeply photocatalytic oxidation of NO

Deeply photocatalytic oxidation of NO-to-NO_(3)holds great promise for alleviating NO_(x) pollution.The major challenge of NO photo-oxidation is the highly in-situ generated NO_(2) concentration,and the formation of unstable nitrate species causes desorption to release NO_(2).In this study,SnO_(2) quantum dots and oxygen vacancies co-modified Zn_(2)SnO_(4)(ZSO-SnO_(2)-OVs)were prepared by a one-step hydrothermal procedure,the NO photo-oxidation was investigated by a combination of solid experimental and theoretical support.Impressively,spectroscopic measurements indicate that fast carrier dynamics can be achieved due to the electron transfer efficiency of ZSO-SnO_(2)-OVs reaching 99.99%,far outperforming the counterpart and previously reported photocatalysts.During NO oxidation,molecular NO/O_(2) and H2O are efficiently adsorbed/activated around OVs and SnO_(2) QDs,respectively.In-situ infrared measurements and calculated electron localized function disclose two main findings:(1)richly electrons enable NO promptly form NOinstead of toxic NO_(2) or NO^(+);(2)the generation of stable and undecomposed bidentate NO_(3)rather than bridging or monodentate one benefits the deep oxidation of NO via shifting reaction sites from O terminals for original ZSO to Sn ones for ZSO-SnO_(2)-OVs.The synergistic action of SnO_(2) QDs and OVs positively contributes to the NO oxidation performance enhancement(60.6%,0.1 g of sample)and high selectivity of NO to NO_(3)(99.2%).Results from this study advance the mechanistic understanding of NO photooxidation and its selectivity to NO_(3)over photocatalysts.