Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector

The space charge accumulation in CdZnTe crystals seriously affects the performance of high-flux pulse detectors.The influence of sub-bandgap illumination on the space charge distribution and device performance in CdZnTe crystals were studied theoretically by Silvaco TCAD software simulation.The sub-bandgap illumination with a wavelength of 890 nm and intensity of 8×10−8 W/cm2 were used in the simulation to explore the space charge distribution and internal electric field distribution in CdZnTe crystals.The simulation results show that the deep level occupation faction is manipulated by the sub-bandgap illumination,thus space charge concentration can be reduced under the bias voltage of 500 V.A flat electric field distribution is obtained,which significantly improves the charge collection efficiency of the CdZnTe detector.Meanwhile,premised on the high resistivity of CdZnTe crystal,the space charge concentration in the crystal can be further reduced with the wavelength of 850 nm and intensity of 1×10−7 W/cm2 illumination.The electric field distribution is flatter and the carrier collection efficiency of the device can be improved more effectively.

Photoelectrochemical evaluation of SILAR-deposited nanoporous BiVO4 photoanodes for solar-driven water splitting

We report a photoelectrochemical investigation of BiVO4 photoanodes prepared by successive ionic layer adsorption and reaction(SILAR),a facile method that yields uniform nanoporous films.After characterization of the phase,morphology,composition,and optical properties of the prepared films,the efficiencies of charge separation(ηsep)and water oxidation(ηox)in solar water splitting cells employing these photoanodes were estimated following a previously reported procedure.Unexpected wavelength and illumination direction dependencies were discovered in the derived efficiencies,casting doubt on the validity of the analysis.An alternative approach using a diffusion–reaction model that explicitly considers the efficiency of electron collection resolved the discrepancies and explained the illumination direction dependence of the photocurrent.Electron diffusion lengths(Ln)of 0.45μm and 0.55μm were derived for pristine and cobalt phosphate(Co-Pi)modified BiVO4,respectively,which are much shorter than the film thickness of^2.1μm.The Co-Pi treatment also increasedηoxfrom 0.86 to^1,which is the main reason for the overall performance enhancement caused by adding Co-Pi.These findings suggest that there is little scope for improving the performance of SILAR-deposited BiVO4 photoanodes by further catalyzing water oxidation,but enhanced performance is achievable if electron transport can be improved.

Influence of Extraction Barrier on the Loss Process of Photogenerated Charge Carrier in Polymer Bulk Heterojunction Solar Cells

Based on a full device model adopting three-dimensional Pauli master equation approach, the charge carrier loss process due to poor extraction channels between electrode and active layer in polymer bulk heterojunction（BHJ） solar cells was studied. The influence of barrier height on device performance was simulated to reveal the importance of electrode improvement. It was found that relatively large extraction barrier height（over 0.40 eV） can lead to the significant diminishing of the overall charge collection efficiency, since bimolecular recombination rate would increase to a high level due to enhanced space charge accumulation effect near electrodes. In contrast, the percentage of charge carrier annihilated due to geminate recombination did not change significantly with barrier height variation. Our simulation results may provide the basis for a more accurate model and potential direction of polymer BHJ solar cells improvement.