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An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump
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作者 Yiling Xie Baochuang Wang +1 位作者 Dihu Chen Jianping Guo 《Journal of Semiconductors》 EI CAS 2024年第6期23-34,共12页
In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loo... In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change. 展开更多
关键词 output-capacitorless low-dropout regulator fast transient low quiescent current event-driven charge pump
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基于BCD高压工艺的过压过流保护开关芯片设计 被引量:1
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作者 陈超 《科学技术创新》 2021年第19期7-9,共3页
设计了一种基于BCD高压工艺的过压过流保护开关芯片,具备过压保护、过流保护、过温保护、锂电池过充保护等功能,芯片最大可以承受30V输入电压,输入电流最大可以达到1.5A,过压保护阈值电压设置为6.1V,过流保护阈值电流可以通过外接电阻... 设计了一种基于BCD高压工艺的过压过流保护开关芯片,具备过压保护、过流保护、过温保护、锂电池过充保护等功能,芯片最大可以承受30V输入电压,输入电流最大可以达到1.5A,过压保护阈值电压设置为6.1V,过流保护阈值电流可以通过外接电阻来调节,当外接电阻阻值为25KΩ时,过流保护阈值电流为1A。芯片已完成电路设计和版图设计,流片后对芯片进行测试,各项指标均达到预期设计值。 展开更多
关键词 过压保护 过流保护 charge pump BCD工艺
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High-speed and low-power repeater for VLSI interconnects
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作者 A.Karthikeyan P.S.Mallick 《Journal of Semiconductors》 EI CAS CSCD 2017年第10期79-83,共5页
This paper proposes a repeater for boosting the speed of interconnects with low power dissipation.We have designed and implemented at 45 and 32 nm technology nodes.Delay and power dissipation performances are analyzed... This paper proposes a repeater for boosting the speed of interconnects with low power dissipation.We have designed and implemented at 45 and 32 nm technology nodes.Delay and power dissipation performances are analyzed for various voltage levels at these technology nodes using Spice simulations.A significant reduction in delay and power dissipation are observed compared to a conventional repeater.The results show that the proposed high-speed low-power repeater has a reduced delay for higher load capacitance.The proposed repeater is also compared with LPTG CMOS repeater,and the results shows that the proposed repeater has reduced delay.The proposed repeater can be suitable for high-speed global interconnects and has the capacity to drive large loads. 展开更多
关键词 REPEATER interconnects DELAY power dissipation charge pump
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A 0.20–2.43 GHz fractional-N frequency synthesizer with optimized VCO and reduced current mismatch CP
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作者 Wei ZOU Darning REN Xuecheng ZOU 《Frontiers of Information Technology & Electronic Engineering》 SCIE EI CSCD 2021年第2期251-261,共11页
A 0.20–2.43 GHz fractional-N frequency synthesizer is presented for multi-band wireless communication systems,in which the scheme adopts low phase noise voltage-controlled oscillators(VCOs)and a charge pump(CP)with r... A 0.20–2.43 GHz fractional-N frequency synthesizer is presented for multi-band wireless communication systems,in which the scheme adopts low phase noise voltage-controlled oscillators(VCOs)and a charge pump(CP)with reduced current mismatch.VCOs that determine the out-band phase noise of a phase-locked loop(PLL)based frequency synthesizer are optimized using an automatic amplitude control technique and a high-quality factor figure-8-shaped inductor.A CP with a mismatch suppression architecture is proposed to improve the current match of the CP and reduce the PLL phase errors.Theoretical analysis is presented to investigate the influence of the current mismatch on the output performance of PLLs.Fabricated in a TSMC 0.18-μm CMOS process,the prototype operates from 0.20 to 2.43 GHz.The PLL synthesizer achieves an in-band phase noise of-96.8 dBc/Hz and an out-band phase noise of-122.8 dBc/Hz at the 2.43-GHz carrier.The root-mean-square jitter is 1.2 ps under the worst case,and the measured reference spurs are less than-65.3 dBc.The current consumption is 15.2 mA and the die occupies 850μm×920μm. 展开更多
关键词 Frequency synthesizer charge pump(CP) Voltage-controlled oscillator(VCO) Current mismatch Phase noise
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