Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET),a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated.The obtained sensor consist...Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET),a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated.The obtained sensor consists of self-assembly polyaniline (PAN) composite film containing poly(acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate.The UV-Vis absorption spectra of PAN/PAA films were characterized.The NO_2 gas sensitive property of the ChemFET sensor array was also investigated.Results show that the drain current of devices increases with increasing of back-side voltage,and decreases with the increase of NO_2 concentration when the NO_2 concentration is below 20μg/g.The temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.展开更多
This work focuses on the fabrication and characterization of Chemical Field-Effect Transistor(ChemFET)gas nanosensor arrays based on single nanowire(SNW).The fabrication processes include micro and nanofabrication tec...This work focuses on the fabrication and characterization of Chemical Field-Effect Transistor(ChemFET)gas nanosensor arrays based on single nanowire(SNW).The fabrication processes include micro and nanofabrication techniques enabled by a combination of ultraviolet(UV)and e-beam lithography to build the ChemFET structure.Results show the integration and connection of SNWs across the multiple pairs of nanoelectrodes in the ChemFET by dielectrophoresis process(DEP)thanks to the incorporation of alignment windows(200-300 nm)adapted to the diameter of the NWs.Measurements of the SNW ChemFET array's output and transfer characteristics prove the influence of gate bias on the drain current regulation.Tests upon hydrogen(H_(2))and nitrogen dioxide(NO_(2))as analyte models of reducing and oxidizing gases show the ChemFET sensing functionality.Moreover,results demonstrate better response characteristics to H_(2)when the ChemFET operates in the subthreshold regime.The design concepts and methods proposed for fabricating the SNW-based ChemFET arrays are versatile,reproducible,and most likely adaptable to other systems where SNW arrays are required.展开更多
基金This work is supported by the National Science Foundation of China （Grants No. 60372002, 60425101）
文摘Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET),a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated.The obtained sensor consists of self-assembly polyaniline (PAN) composite film containing poly(acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate.The UV-Vis absorption spectra of PAN/PAA films were characterized.The NO_2 gas sensitive property of the ChemFET sensor array was also investigated.Results show that the drain current of devices increases with increasing of back-side voltage,and decreases with the increase of NO_2 concentration when the NO_2 concentration is below 20μg/g.The temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.
基金This work was supported by the Czech Science Foundation(GAČR,No.22-14886S)the MCIN/AEI/10.13039/501100011033(No.PID2019-107697RBC42(ERDF A way of making Europe)).
文摘This work focuses on the fabrication and characterization of Chemical Field-Effect Transistor(ChemFET)gas nanosensor arrays based on single nanowire(SNW).The fabrication processes include micro and nanofabrication techniques enabled by a combination of ultraviolet(UV)and e-beam lithography to build the ChemFET structure.Results show the integration and connection of SNWs across the multiple pairs of nanoelectrodes in the ChemFET by dielectrophoresis process(DEP)thanks to the incorporation of alignment windows(200-300 nm)adapted to the diameter of the NWs.Measurements of the SNW ChemFET array's output and transfer characteristics prove the influence of gate bias on the drain current regulation.Tests upon hydrogen(H_(2))and nitrogen dioxide(NO_(2))as analyte models of reducing and oxidizing gases show the ChemFET sensing functionality.Moreover,results demonstrate better response characteristics to H_(2)when the ChemFET operates in the subthreshold regime.The design concepts and methods proposed for fabricating the SNW-based ChemFET arrays are versatile,reproducible,and most likely adaptable to other systems where SNW arrays are required.
