Sm2O3 containing zinc-borosilicate glass and glass ceramics were prepared by melt quenching method, and the effect of Sm2O3 and micro-crystallization on the chemical stability of borosilicate glass was explored. DTA a...Sm2O3 containing zinc-borosilicate glass and glass ceramics were prepared by melt quenching method, and the effect of Sm2O3 and micro-crystallization on the chemical stability of borosilicate glass was explored. DTA analysis showed that the endothermic peak and exothermic peak of basic glass changed from 635 ℃ and 834 ℃ to 630 ℃ and 828 ℃ respectively as a result of the doping of Sm2O3. XRD analysis showed the promoting effect of Sm2O3 on crystallization ability of this glass. The cumulative mass loss of base glass, Sm2O3 containing glass, glass ceramic and Sm2O3 containing glass ceramic was 0.289, 0.253, 0.329, 0.269 mg/mm2 respectively after 26 days corrosion in alkali solution, and 1.293, 1.290, 0.999, 1.040 mg/mm2 respectively in acidic erosion medium. Micro-crystallization decreased and improved the alkali and acid resistance of borosilicate glass respectively, the addition of Sm2O3 increased the alkali resistance of base glass and glass ceramics, and the slight effect of Sm2O3 on the acid resistance of borosilicate glass was also observed.展开更多
In this paper,the influence of crystal-field on the Luminescence properties of Eu^(2+) in complex oxides are studied theoretically by using purely electrostatic model,the dependence of the 4f^65d levels on Eu-O bond d...In this paper,the influence of crystal-field on the Luminescence properties of Eu^(2+) in complex oxides are studied theoretically by using purely electrostatic model,the dependence of the 4f^65d levels on Eu-O bond distance is given.Quantum chemistry calculation shows that the splitting extent of 4f^65d energy band in cubic or in octahedral fields will be inversely proportional to R^5,where R is the distance of Eu^(2+) to oxygen ligand.The value of R affects slightly the location of the centre of 4f^65d energy band.According to the exper- imental spectrum data,we have discussed the influence of the host chemical composition,the replaced sites of Eu^(2+) and degree of covalency of Eu-O bond on luminescence properties of Eu^(2+).Some regularity of fluorescence spectrum was observed. In alkali-alkaline earth-phosphates,the splitting extent of 4f^65d band (△E) becomes smaller as the Eu-O bond distance (R) increases.In Na_(3-x)(PO_4)_(1-x)(SO_4)_x and Na_(2-x)CaSi_(1-x)P_xO_4 hosts,d-d emission peak of Eu^(2+) will shift to shorter wavelength with the increase of x's value. The crystal structure data show that Eu^(2+) in K_2Mg_2(SO_4)_3 is affected more strongly by crystal-field and covalancy than in KMgF_3,so K_2Mg_2(SO_4)_3:Eu^(2+) emits blue light (E_(em)~m=400nm) and KMgF_3:Eu^(2+) produces ultraviolet fluorescence.展开更多
The program system described in this paper is a microcomputer analytic system for X-ray crystal structure used in chemical laboratories.The abbreviated name is NOMCSDP.NOMCSDP has been developed on the basis of NRCVAX...The program system described in this paper is a microcomputer analytic system for X-ray crystal structure used in chemical laboratories.The abbreviated name is NOMCSDP.NOMCSDP has been developed on the basis of NRCVAX and SHELXS-86.It is a software for X- ray crystal structure analysis of organic molecules,especially natural organic molecules(1-7).展开更多
In this paper,Raman shifts of a-plane GaN layers grown on r-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition(LPMOCVD) are investigated.We compare the crystal qualities and study the ...In this paper,Raman shifts of a-plane GaN layers grown on r-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition(LPMOCVD) are investigated.We compare the crystal qualities and study the relationships between Raman shift and temperature for conventional a-plane GaN epilayer and insertion AlN/AlGaN superlattice layers for a-plane GaN epilayer using temperature-dependent Raman scattering in a temperature range from 83 K to 503 K.The temperature-dependences of GaN phonon modes(A1(TO),E2(high),and E1(TO)) and the linewidths of E2(high) phonon peak are studied.The results indicate that there exist two mechanisms between phonon peaks in the whole temperature range,and the relationship can be fitted to the pseudo-Voigt function.From analytic results we find a critical temperature existing in the relationship,which can characterize the anharmonic effects of a-plane GaN in different temperature ranges.In the range of higher temperature,the relationship exhibits an approximately linear behavior,which is consistent with the analyzed results theoretically.展开更多
Coumarin derivative 3-bromo-7-methyloxy-4-methylcoumarin(C11H9BrO3) was synthesized and characterized by FT-IR,1H NMR spectra,and thermal analysis.The crystal structure was determined by X-ray single-crystal diffrac...Coumarin derivative 3-bromo-7-methyloxy-4-methylcoumarin(C11H9BrO3) was synthesized and characterized by FT-IR,1H NMR spectra,and thermal analysis.The crystal structure was determined by X-ray single-crystal diffraction.The title compound crystallizes in the mono-clinic system,space group P21/n,with a = 7.770(16),b = 12.501(3),c = 10.627(2),β = 98.46(3)°,Mr = 269.09,V = 1021.0(4) 3,Z = 4,Dc = 1.751 g/cm3,μ = 4.008 mm-1,F(000) = 536,R = 0.0650 and wR = 0.1463.The optimization of the title compound was obtained by quantum chemical method at the SVWN5/6-31G** level.In the structure,the measured angles of the crystal structure are similar to those calculated,while the measured bond lengths are shorter than the calculated values due to the crystal field which functions to the molecule.The title compound also shows good fluorescent behaviors and good linear relationship with the equal concentration gradient in methanol.展开更多
A high-performance PMOSFET based on silicon material of hybrid orientation is obtained.Hybrid orientation wafers,integrated by(100) and(110) crystal orientation,are fabricated using silicon-silicon bonding, chemic...A high-performance PMOSFET based on silicon material of hybrid orientation is obtained.Hybrid orientation wafers,integrated by(100) and(110) crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanical polishing,etching silicon and non-selective expitaxy.A PMOSFET with W/L = 50μm/8μm is also processed,and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7%and 150%at V_(gs) =-15 V and V_(ds) =-0.5 V,respectively.The mobility values are higher than that reported in the literature.展开更多
基金Funded by the National Natural Science Foundation of China(51025416,51202104 and 51362019)the Natural Science Foundation of the Inner Mongolia Autonomous Region(2012MS0807)+1 种基金the Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region,the Talent Incubation Funding of School of Materials and Metallurgy(2014CY012)the Talent Incubation Funding of School of Materials and Metallurgy(2014CY012)
文摘Sm2O3 containing zinc-borosilicate glass and glass ceramics were prepared by melt quenching method, and the effect of Sm2O3 and micro-crystallization on the chemical stability of borosilicate glass was explored. DTA analysis showed that the endothermic peak and exothermic peak of basic glass changed from 635 ℃ and 834 ℃ to 630 ℃ and 828 ℃ respectively as a result of the doping of Sm2O3. XRD analysis showed the promoting effect of Sm2O3 on crystallization ability of this glass. The cumulative mass loss of base glass, Sm2O3 containing glass, glass ceramic and Sm2O3 containing glass ceramic was 0.289, 0.253, 0.329, 0.269 mg/mm2 respectively after 26 days corrosion in alkali solution, and 1.293, 1.290, 0.999, 1.040 mg/mm2 respectively in acidic erosion medium. Micro-crystallization decreased and improved the alkali and acid resistance of borosilicate glass respectively, the addition of Sm2O3 increased the alkali resistance of base glass and glass ceramics, and the slight effect of Sm2O3 on the acid resistance of borosilicate glass was also observed.
文摘In this paper,the influence of crystal-field on the Luminescence properties of Eu^(2+) in complex oxides are studied theoretically by using purely electrostatic model,the dependence of the 4f^65d levels on Eu-O bond distance is given.Quantum chemistry calculation shows that the splitting extent of 4f^65d energy band in cubic or in octahedral fields will be inversely proportional to R^5,where R is the distance of Eu^(2+) to oxygen ligand.The value of R affects slightly the location of the centre of 4f^65d energy band.According to the exper- imental spectrum data,we have discussed the influence of the host chemical composition,the replaced sites of Eu^(2+) and degree of covalency of Eu-O bond on luminescence properties of Eu^(2+).Some regularity of fluorescence spectrum was observed. In alkali-alkaline earth-phosphates,the splitting extent of 4f^65d band (△E) becomes smaller as the Eu-O bond distance (R) increases.In Na_(3-x)(PO_4)_(1-x)(SO_4)_x and Na_(2-x)CaSi_(1-x)P_xO_4 hosts,d-d emission peak of Eu^(2+) will shift to shorter wavelength with the increase of x's value. The crystal structure data show that Eu^(2+) in K_2Mg_2(SO_4)_3 is affected more strongly by crystal-field and covalancy than in KMgF_3,so K_2Mg_2(SO_4)_3:Eu^(2+) emits blue light (E_(em)~m=400nm) and KMgF_3:Eu^(2+) produces ultraviolet fluorescence.
文摘The program system described in this paper is a microcomputer analytic system for X-ray crystal structure used in chemical laboratories.The abbreviated name is NOMCSDP.NOMCSDP has been developed on the basis of NRCVAX and SHELXS-86.It is a software for X- ray crystal structure analysis of organic molecules,especially natural organic molecules(1-7).
基金Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. K50511250002)the National Key Science & Technology Special Project,China (Grant No. 2008ZX01002-002)+1 种基金the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033)the Science Fund for Youths Scholars (Grant Nos. 61204006)
文摘In this paper,Raman shifts of a-plane GaN layers grown on r-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition(LPMOCVD) are investigated.We compare the crystal qualities and study the relationships between Raman shift and temperature for conventional a-plane GaN epilayer and insertion AlN/AlGaN superlattice layers for a-plane GaN epilayer using temperature-dependent Raman scattering in a temperature range from 83 K to 503 K.The temperature-dependences of GaN phonon modes(A1(TO),E2(high),and E1(TO)) and the linewidths of E2(high) phonon peak are studied.The results indicate that there exist two mechanisms between phonon peaks in the whole temperature range,and the relationship can be fitted to the pseudo-Voigt function.From analytic results we find a critical temperature existing in the relationship,which can characterize the anharmonic effects of a-plane GaN in different temperature ranges.In the range of higher temperature,the relationship exhibits an approximately linear behavior,which is consistent with the analyzed results theoretically.
文摘Coumarin derivative 3-bromo-7-methyloxy-4-methylcoumarin(C11H9BrO3) was synthesized and characterized by FT-IR,1H NMR spectra,and thermal analysis.The crystal structure was determined by X-ray single-crystal diffraction.The title compound crystallizes in the mono-clinic system,space group P21/n,with a = 7.770(16),b = 12.501(3),c = 10.627(2),β = 98.46(3)°,Mr = 269.09,V = 1021.0(4) 3,Z = 4,Dc = 1.751 g/cm3,μ = 4.008 mm-1,F(000) = 536,R = 0.0650 and wR = 0.1463.The optimization of the title compound was obtained by quantum chemical method at the SVWN5/6-31G** level.In the structure,the measured angles of the crystal structure are similar to those calculated,while the measured bond lengths are shorter than the calculated values due to the crystal field which functions to the molecule.The title compound also shows good fluorescent behaviors and good linear relationship with the equal concentration gradient in methanol.
基金supported by the National Basic Research Program of China(No.61398)
文摘A high-performance PMOSFET based on silicon material of hybrid orientation is obtained.Hybrid orientation wafers,integrated by(100) and(110) crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanical polishing,etching silicon and non-selective expitaxy.A PMOSFET with W/L = 50μm/8μm is also processed,and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7%and 150%at V_(gs) =-15 V and V_(ds) =-0.5 V,respectively.The mobility values are higher than that reported in the literature.