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Adaptive Layout Partitioning for Dark Field Alternating Phase-Shift Mask Design 被引量:1
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作者 王迪 吴为民 洪先龙 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第7期766-770,共5页
A new partitioning methodology is presented to accelerate 130nm and beyond large scale alternating phase shift mask(Alt PSM) design flow.This method deals with granularity self adaptively.Phas... A new partitioning methodology is presented to accelerate 130nm and beyond large scale alternating phase shift mask(Alt PSM) design flow.This method deals with granularity self adaptively.Phase conflicts resolution approaches are described and strategies guaranteeing phase compatible during layout compaction are also discussed.An efficient CAD prototype for dark field Alt PSM based on these algorithms is implemented.The experimental results on several industry layouts show that the tool can successfully cope with the rapid growth of phase conflicts with good quality and satisfy lower resource consumption with different requirements of precision and speedup. 展开更多
关键词 IC CAD phase-shift mask PARTITION phase conflict design for manufacturing
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无铬相移掩模光刻技术 被引量:5
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作者 冯伯儒 陈宝钦 《光子学报》 EI CAS CSCD 1996年第4期328-332,共5页
本文论述了相移掩模(PSM)提高光刻分辨率的基本原理、主要类型、无铬 PSM 的制作方法,简述了曝光实验和实验结果.用 NA=0.28的 g 线光刻机得到了0.5μm的实际分辨率.
关键词 相移掩膜 无铬 光刻技术 大规模集成电路
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