Objective: To investigate the effect of inducing apoptosis of Elemene on ascites hepatoma cell line Hca F25/cL 16A3. By using immunhistochemistry and DNA electrophoresis, the mechanism of Elemene antitumor was s...Objective: To investigate the effect of inducing apoptosis of Elemene on ascites hepatoma cell line Hca F25/cL 16A3. By using immunhistochemistry and DNA electrophoresis, the mechanism of Elemene antitumor was studied. Results: The results showed that the Elemene can inhibit expression of bcl 2 in ascites hepatoma cell line Hca F25/CL 16A3, and the Elemene also can make DNA fragmentation in this cell line in vitro and in vivo . Conclusion: The data suggest that Elemene can inhibit the growth of tumor by inducing apoptosis.展开更多
A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 rat...A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 ratio in the Cl2/Ar/BCI3 mixture (20%—60%), increasing the ICR power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCI3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AIGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AIGaN herterostructures at high etch rate.展开更多
文摘Objective: To investigate the effect of inducing apoptosis of Elemene on ascites hepatoma cell line Hca F25/cL 16A3. By using immunhistochemistry and DNA electrophoresis, the mechanism of Elemene antitumor was studied. Results: The results showed that the Elemene can inhibit expression of bcl 2 in ascites hepatoma cell line Hca F25/CL 16A3, and the Elemene also can make DNA fragmentation in this cell line in vitro and in vivo . Conclusion: The data suggest that Elemene can inhibit the growth of tumor by inducing apoptosis.
基金the Foundation for Key Projects of Basic Research (TG2000036601)the '863' High Tech Foundation (2002AA31119Z, 2001AA312190) the National Natural Science Foundation of China (Grant No. 60244001).
文摘A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 ratio in the Cl2/Ar/BCI3 mixture (20%—60%), increasing the ICR power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCI3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AIGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AIGaN herterostructures at high etch rate.
