Research on Switching Characteristics Based on Optimization Design of SiC MOSFET Drive Circuit

With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.

Nonlinear Auto-Companding Method for Behavioral Modeling of Switched-Current Circuits

A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current circuits.The companding function is automatically constructed according to the initial error distribution obtained through approximating the input output function of the SI circuit by conventional wavelet collocation method.In practical applications,the proposed method is a general purpose approach,by which both the small signal effect and the large signal effect are modeled in a unified formulation to ease the process of modeling and simulation.Compared with the published modeling approaches,the proposed nonlinear auto companding method works more efficiently not only in controlling the error distribution but also in reducing the modeling errors.To demonstrate the promising features of the proposed method,several SI circuits are employed as examples to be modeled and simulated.

Simulation realization of skip cycle mode integrated control circuit in the switching power supply with low standby loss

This paper explores and proposes a design solution of an integrated skip cycle mode （SCM） control circuit with a simple structure. The design is simulated and implemented with XD10H-1.0μm modular DIMOS 650 V process. In order to meet the requirement of a wide temperature range and high yields of products, the schematic extracted from the layout is simulated with five process corners at 27℃ and 90℃. Simulation results demonstrate that the proposed integrated circuit is immune to noise and achieves skipping cycle control when switching mode power supply （SMPS） works with low load or without load.

Fault diagnosis method for switch control circuit based on SVM-AdaBoost

In order to realize the fault diagnosis of the control circuit of all-electronic computer interlocking system(ACIS)for railway signals,taking a five-wire switch electronic control module as an research object,we propose a method of selecting the sample set of the basic classifier by roulette method and realizing fault diagnosis by using SVM-AdaBoost.The experimental results show that the proportion of basic classifier samples affects classification accuracy,which reaches the highest when the proportion is 85%.When selecting the sample set of basic classifier by roulette method,the fault diagnosis accuracy is generally higher than that of the maximum weight priority method.When the optimal proportion 85%is taken,the accuracy is highest up to 96.3%.More importantly,this way can better adapt to the critical data and improve the anti-interference ability of the algorithm,and therefore it provides a basis for fault diagnosis of ACIS.

A Novel Crowbar Impulse Current Circuit for Testing the Switch-Type SPD

A crowbar impulse current circuit for testing the switch-type surge protective device （SPD） is presented. The crowbar circuit consists of a computer control circuit, a trigger voltage pulse generator, a main discharging switch, and a crowbar pseudospark switch. The active trigger technology was studied in the crowbar impulse current circuit. The circuit monitors the main discharging current and generates a trigger signal at a proper time for the crowbar pseudospark switch operation. The trigger characteristics of the main discharge switch and the crowbar pseu- dospark switch were investigated. By monitoring the preset applied capacitor voltage, the gap distance of the main discharging switch could be adjusted to ensure a discharging delay time less than 2 μs. Equipped with a surface ttashover trigger device made of high relative perimittivity dielectric material BaTiO3 （εr = 3460）, the discharge delay time of the crowbar pseudospark switch is less than 85 ns, and the minimum operating voltage is less than 1% of its self-breakdown voltage. With a storage capacitor of 9 μF , an inductor of 18 μH and a crowbar pseudospark switch, a load of 30 mΩ and an applied capacitor voltage of 40 kV, an impulse current waveform of maximum 25 kA was generated with a rise time and time to half peak value of 17.2 μs and 336μs respectively.

Linear fast shutdown technology based on self-resonant constant voltage clamping

Transient electromagnetic method(TEM)has been widely used in the field of medium and shallow underground detection due to its high detection efficiency and large detection depth.However,due to the long turn-off time of the transmitting current caused by the inductive characteristics of the transmitting coil,the early signals will be overwhelmed by primary field.Since the early signals contain most of shallow geological signals,it is necessary to reduce the long turn-off time to get shallow layer signal.Due to lack of a reliable and effective clamping method for high-power transmission at present,we design a TEM transmitter fast turn-off circuit,combining self-resonant zero-voltage switching technology with the corresponding timing control circuit to solve this problem effectively.A transient electromagnetic transmitter based on self-resonant constant voltage clamping technology was fabricated to charge the clamping capacitor.The rated transmitting current of the transmitter is 20 A,and the turn-off time is continuously adjustable from 550-50μs.Moreover,the current drop process is approximately linear rather than exponential attenuation.Compared with the existing clamping methods,the proposed clamping method solves the problems that transient voltage suppressor(TVS)clamping cannot be used in high-power occasions and has a high failure rate.It also solves the problem of long pre-charge time in traditional capacitor clamping methods due to insufficient inductance of the small size transmitting coil.The proposed method can provide a reference for fast shutdown of large current.

DESIGN OF TERNARY CURRENT-MODE CMOS CIRCUITS BASED ON SWITCH-SIGNAL THEORY

By applying switch-signal theory, the interaction between MOS transmission switch-ing transistor and current signal in current-mode CMOS circuits is analyzed, and the theory oftransmission current-switches which is suitable to current-mode CMOS circuits is proposed. Thecircuits, such as ternary full-adder etc., designed by using this theory have simpler circuit struc-tures and correct logic functions. It is confirmed that this theory is efficient in guiding the logicdesign of current-mode CMOS circuits at switch level.

A novel circuit design for complementary resistive switch-based stateful logic operations

Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch（CRS）-based stateful logic operations. The proposed circuit can automatically write the destructive CRS cells back to the original states. In addition, the circuit can be used in massive passive crossbar arrays which can reduce sneak path current greatly. Moreover, the steps for CRS logic operations using our proposed circuit are reduced compared with previous circuit designs. We validate the effectiveness of our scheme through Hspice simulations on the logic circuits.

Change-over switch for quantum states transfer with topological channels in a circuit-QED lattice

We propose schemes to realize robust quantum states transfer between distant resonators using the topological edge states of a one-dimensional circuit quantum electrodynamics(QED)lattice.Analyses show that the distribution of edge states can be regulated accordingly with the on-site defects added on the resonators.And we can achieve different types of quantum state transfer without adjusting the number of lattices.Numerical simulations demonstrate that the on-site defects can be used as a change-over switch for high-fidelity single-qubit and two-qubit quantum states transfer.This work provides a viable prospect for flexible quantum state transfer in solid-state topological quantum system.

Full Graph Methods of Switched Current Circuit Solution

Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit analysis in addition to algebraic methods, it is clearly possible in theory to carry out an analysis of the whole switched circuit in two-phase switching exclusively by the graph method as well. For this purpose it is possible to plot a Mason graph of a circuit, use transformation graphs to reduce Mason graphs for all the four phases of switching, and then plot a summary graph from the transformed graphs obtained this way. First the author draws nodes and possible branches, obtained by transformation graphs for transfers of EE （even-even） and OO （odd-odd） phases. In the next step, branches obtained by transformation graphs for EO and OE phase are drawn between these nodes, while their resulting transfer is 1 multiplied by z^1/2. This summary graph is extended by two branches from input node and to output node, the extended graph can then be interpreted by the Mason＇s relation to provide transparent current transfers. Therefore it is not necessary to compose a sum admittance matrix and to express this consequently in numbers, and so it is possible to reach the final result in a graphical way.

高压断路器触头烧蚀及电寿命评估研究综述

随着高压断路器接近设计寿命年限其触头烧蚀情况越来越严重,评估高压断路器电寿命可提高利用效率同时保证其运行可靠性。根据近些年有关开关电器电寿命相关文献,首先从触头烧蚀数学模型出发剖析了断路器电寿命终结物理过程;然后对比了目前常用的断路器电寿命评估方法优缺点,指出数据模型是驱动设备寿命准确评估的关键,并借鉴其他类型开关电器电寿命相关研究为高压断路器靠性评估开拓了思路。最后指出高压断路器电寿命预测所面临挑战以及研究方向。

智算数据中心光电交换技术综述(特邀)

近年来,由于人工智能现象级应用的出现,智算数据中心(AIDC)和超算数据中心(SCDC)网络演进成为研究热点。传统的3层全连接电交换架构已经不能很好地满足AIDC或SCDC高带宽、低时延、低功耗和低成本的需求,需要一种更为高效和易于扩容的电光融合交换或光交换方案来逐步替代传统纯电路包交换的策略。文章对近年来基于数据中心的光电融合交换技术方案进行了综述性介绍,对行业中率先进行光交换技术尝试的头部互联网企业的部署经验进行了分析,并结合电信行业需求,给出了AIDC和SCDC交换节点的推荐部署和演进方式。

基于新能源发电改进型移相全桥变换器研究

新能源发电中需要广泛使用移相全桥变换器,以实现软开关技术从而减小系统的开关损耗。而传统移相全桥直流变换器滞后臂在轻载时难以实现ZVS,导致系统大功率输出时效率降低以及系统换路时容易产生尖峰电压、电流等现象,针对这一问题,提出了一种改进的有源软开关移相全桥DC-DC变换器拓扑。系统首先提出了改进变换器的拓扑结构,在此基础上对其工作模态进行了研究分析,并合理优化相关器件的选型,最后通过系统仿真及试验平台进行了系统仿真和试验测试,结果表明,所设计的加入辅助电路改进型移相全桥直流变换器在轻载情况下,能够使变换器滞后臂达到软开关效果,同时,在大功率输出情况下,对器件发热、电压波形振荡均有较好的抑制作用,系统整体效率变高,同时可靠性、稳定性变强。

一种基于电容主动钳位式混合式直流断路器

混合式直流断路器兼具机械式直流断路器的静态特性与固态直流断路器的动态特性,具有较快的开断速度和较低的通态损耗,是应用于中高压直流输配电系统的优选技术方案。然而,基于模块级联的混合式直流断路器存在投资成本较高、避雷器吸能较高、不具备故障性质判别能力等问题,限制了断路器的工程化应用。该文在现有结构的基础上进行一定的改进,提出一种基于电容主动钳位式混合式直流断路器。主要利用电容电压钳位换流站侧电压,避免了换流站电压迅速跌落的同时降低了换流站侧的故障电流峰值。此外,电容电压还可作为线路故障和重合闸时的辅助判据。针对所提结构进行了详细的理论推导和分析,在PSCAD/EMTDC中建立四端直流环网对所提结构进行验证,并与原有方案进行对比。仿真结果证明所提结构可行且相对原有方案具备一定优势。

一种基于HTCC的高隔离度开关电路设计

基于开关芯片实现的开关电路是射频前端的基本单元之一,其功能是实现射频信号的导通和关断,在小功率射频信号传输中应用广泛。本文以6 GHz~15 GHz超宽带、60 dB隔离度为设计目标,采用高温共烧陶瓷基板工艺和级联腔体隔离技术,以级联开关芯片为基本电路结构,设计了高隔离度开关电路。该电路包含一只限幅器和两只吸收式砷化镓单刀单掷开关,装配于两个相邻的隔离腔体结构中,通过类同轴垂直传输过渡到基板内对称带状线传输结构,再辅以两侧地孔,实现电磁屏蔽。对开关电路进行电磁场建模仿真,结果表明该结构具有良好的传输特性和隔离特性;在射频前端电路制造完成后对开关电路进行装配和测试,测试结果与建模仿真结果一致性高,验证了本文设计的开关电路具有高隔离度特性。

谐振方式对有源钳位反激变换器工作状态影响的研究

传统有源钳位反激变换器依赖变压器漏感和原边钳位电容之间的谐振实现软开关,消除了开关损耗,但传导损耗大,输出整流器存在电流振荡现象。为解决上述问题,选取变换器最佳工作模式,建立不同谐振方式下的等效电路模型,探究不同谐振方式对变换器性能的影响,以副边谐振方式为基础制作实验样机。由实验结果可知:副边谐振方式有源钳位反激变换器可实现功率器件软开关,降低原边电流有效值,消除副边电流振荡现象,所设计的变换器最大满载效率达94.06%,整机效率高于原边谐振方式。

集成有源开关电感和Y源倍压单元的高增益DC-DC变换器

针对光伏发电系统中光伏组件电压等级的提升,提出一种集成有源开关电感和Y源倍压单元的高增益DC-DC变换器。所提变换器能够实现低开关管电压应力,具有高自由度电压调节能力,在满足一定升压条件下仍能保证电路的效率,在光伏发电中具有较大的应用潜力。对变换器的工作模态、器件电压电流应力、参数设计和损耗效率进行详细阐述。最后通过实验验证所提拓扑结构的可行性。

基于改进型ZVT Buck电路的IPT充电系统设计

为了避免在感应式无线电能传输系统的耦合机构中增加多余的开关器件以及额外的无源元件,同时减小系统工作在高频率、大功率时全控型开关器件存在的开关损耗,提出基于改进型ZVT Buck电路闭环控制的方法实现对电池的恒流、恒压充电,通过分析改进型ZVT Buck电路的工作模态以及对电路参数的设计,确保在整个充电过程中DC-DC变换器均工作在软开关状态,最后搭建充电电流为35 A、充电电压为370 V的实验平台验证该方法的可行性。结果表明:该方法控制简单,并且降低了系统电路结构的复杂度,传输效率相对较高,能够满足恒流恒压充电需求。