Preparation and Properties of Cu-Containing High-entropy Alloy Nitride Films by Magnetron Sputtering on Titanium Alloy

Magnetron sputtering deposition with regulated Cu target power was used for depositing Cu-containing high-entropy alloy nitride(Cu-(HEA)N)films on TC4 titanium alloy substrates.The microscopic morphologies,surface compositions,and thicknesses of the films were characterized using SEM+EDS;the anti-corrosion,wear resistance and antibacterial properties of the films in simulated seawater were investigated.The experimental results show that all four Cu-(HEA)N films are uniformly dense and contained nanoparticles.The film with Cu doping come into contact with oxygen in the air to form cuprous oxide.The corrosion resistance of the(HEA)N film without Cu doping on titanium alloy is better than the films with Cu doping.The Cu-(HEA)N film with Cu target power of 16 W shows the best wear resistance and antibacterial performance,which is attributed to the fact that Cu can reduce the coefficient of friction and exacerbate corrosion,and the formation of cuprous oxide has antibacterial properties.The findings of this study provide insights for engineering applications of TC4 in the marine field.

Effects of power on ion behaviors in radio-frequency magnetron sputtering of indium tin oxide(ITO)

This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.

Study of bias voltage effect on the performance of ta-C coating prepared by high power impulse magnetron sputtering

The mechanical and frictional properties of ta-C coatings deposited on the substrate surface affect applications in the field of cutting tools and wear-resistant components.In this paper,the effect of bias parameters on the performance of ta-C coatings was investigated based on high power impulse magnetron sputtering(HiPIMS)technology.The results show that bias voltage has a significant effect on the deposition rate,structure,and wear resistance of the coating.In the range of bias voltage−50 V to−200 V,the ta-C coating performance was the best under bias voltage−150 V.The thickness reached 530.4 nm,the hardness value reached 35.996 GPa,and the bonding force in-creased to 14.2 N.The maximum sp3 bond content was 59.53% at this condition.

Synthesis of One-Dimensional ZnO Na norods by Oxidating Zinc Films Deposited with Magnetron Sputtering

One-dimensional ZnO nanorods are synthesized by ox idating thin metal zinc films deposited on Si(111) substrates with radio frequen cy magnetron sputtering.The crystal structure,surface morphology,and optical pro perties of nanorods are investigated.X-ray diffraction(XRD) pattern,scanning el ectron microscopy(SEM),and transmission electron microscopy(TEM) analyses show t hat the synthesized single-crystal ZnO nanorods develop like hairpins along dif ferent radials,with a hexagonal wurtzite structure.The diameters of nanorods ran ge between 30 and 60nm and lengths up to micrometers.Photoluminescence(PL) analy sis shows that,under 280nm light excitation,a strong and sharp near band-edge U V light emission band at 372nm and a relatively weak green deep-level light emi ssion band at 516nm are observed from the ZnO nanorods,which indicates excellent crystallization and optical quality of the fabricated ZnO nanorods.

Properties of W/DLC/W-S-C composite films fabricated by magnetron sputtering

A kind of W/DLC/W-S-C composite film was fabricated by magnetron sputtering method.Effects of WSx content on the structure and the adhesion of the composite films were investigated.In addition,tribological behavior of the composite films was studied in the conditions of the ambient air and N2 gas atmosphere by ball-on-disk tester.The results indicate that the composite films show dense and amorphous microstructure.The WCx and WSx compounds are found in amorphous diamond like carbon matrix in the top layers of W-S-C.A proper WSx content is beneficial for improving the adhesion of the composite films.In air atmosphere,the composite films with high C content have better wear resistance and the friction coefficients range from 0.15 to 0.25.In N2 condition,high WSx content is benefit for the wear resistance and the friction coefficients of the composite films range from 0.03 to 0.1.

Microstructure and Nonlinear Optical Properties of Very Small Size GaAs Nanogranulae Embedded in SiO_2 Matrix by Magnetron Co-Sputtering

Microstructure of GaAs/SiO 2 nanogranular thin films fabricated by radio frequency magnetron co sputtering technique and postannealing are investigated via atomic force microscope,X ray diffraction,and Rutherford backscattering spectroscopy.The results show that GaAs nanocrystals with average diameters from 1 5nm to 3 2nm (depending on the annealing temperature) are uniformly dispersed in the SiO 2 matrices.GaAs and SiO 2 are found in normal stoichiometry in the films.The nonlinear optical refraction and nonlinear optical absorption are studied by Z scan technique using a single Gaussian beam of pulse laser.The third order nonlinear optical refractive index and nonlinear absorption coefficient are enhanced due to the quantum confinement effects and estimated to be 4×10 -12 m 2/W and 2×10 -5 m/W respectively in nonresonant condition,while 2×10 -11 m 2/W and -1×10 -4 m/W respectively in quasi resonant condition.

Structure characteristic and its evolution of Cu-W films prepared by dual-target magnetron sputtering deposition

Immiscible Cu-W alloy thin films were prepared using dual-target magnetron sputtering deposition process. The structure evolution of Cu-W thin films during preparation was investigated by X-ray diffraction, transmission electron microscopy and high resolution transmission electron microscopy. In the initial stage of dual-target magnetron sputtering deposition process, an amorphous phase formed; then it crystallized and the analogy spinodal structure formed due to the bombardment of the sputtered particles during sputtering deposition process, the surface structure of the film without the bombardment of the sputtered particles was the amorphous one, the distribution of the crystalline and amorphous phase showed layer structure. The solid solubility with the analogy spinodal structure was calculated using the Vegard law. For Cu-13.7%W （mole fraction） film, its structure was composed of Cu-ll%W solution, Cu-37%W solution and pure Cu; for Cu 14.3%W film, it was composed of Cu-15%W solution, Cu-38%W solution, and pure Cu; for Cu-18.1%W film, it was composed of Cu-19%W solution, Cu-36% W solution and pure Cu.

Surface Metallization of Glass Fiber(GF)/Polyetheretherketone(PEEK) Composite with Cu Coatings Deposited by Magnetron Sputtering and Electroplating

Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), scanning electron microscopy(SEM), and electron backscatter diffraction(EBSD).The coating bonding strength is assessed by pull-out tests and scribing in accordance with GB/T 9286-1998.The results show that the Cu coating with a thickness of 30 μm deposited on GF/PEEK by magnetron sputtering has lower roughness, finer grain size, higher crystallinity, as well as better macroscopic compressive stress,bonding strength, and electrical conductivity than the Cu coating deposited by electroplating.

High Permeability in Broadband of Co-sputtered [Fe-Fe_(20)Ni_(80)/Cr]_(n) Multilayer Films

To achieve high microwave permeability in wide-band for the micron-thick magnetic films,[Fe-Fe_(20)Ni_(80)/Cr]_(n) multilayer structure was proposed by co-sputtering Fe and FeNi to form the magnetic layers and Cr to form the interlayers.The multilayer structure contributes to the high permeability by reducing the coercivity and diminishing out-of-plane magnetization.The maximum imaginary permeability of[Fe-Fe_(20)Ni_(80)/Cr]_(n) multilayer film reaches a large value of 800 at 0.52 GHz even though its overall thickness exceeds 1μm.Besides,the magnetic resonance frequency of the multilayer film can be modulated from 0.52 to 1.35 GHz by adjusting the sputtering power of Fe from 0 to 86 W,and its bandwidth for μ’’>200(Δf) is as large as 2.0 GHz.The desirable broad Δf of magnetic permeability,which can be well fitted by the Landau-Lifshitz-Gilbert equations,is due to dual magnetic resonances originated from double magnetic phases of Fe and FeNi that are of different saturation magnetization.The micron-thick multilayer films with high permeability in extended waveband are promising candidate for electromagnetic noise suppression application.

Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency （RF） msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.

Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering

The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.

Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems

Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods. Unbalanced magnetron sputtering, by producing dense secondary plasma around the substrate, provides a high ion current density. The closed-field unbalanced magnetron sputtering system （CFUBMS） has been established as a versatile technique for high-rate deposition high-quality metal, alloy, and ceramic thin films. The＇key factor in the CFUBMS system is the ability to transport high ion currents to the substrate, which can enhance the formation of full dense coatings at relatively low value homologous temperature. The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes. Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface.

法舒地尔缓解β-淀粉样蛋白1-42诱导的SH-SY5Y细胞凋亡

背景:法舒地尔对阿尔茨海默病小鼠脑内的线粒体动力学有调节作用,并且可以抑制神经炎症,但能否调节线粒体自噬和NLRP3炎症小体进而减轻β-淀粉样蛋白毒性尚不清楚。目的:探究法舒地尔对β-淀粉样蛋白1-42诱导的人源神经母细胞瘤细胞株SH-SY5Y凋亡和线粒体自噬以及NLRP3炎症小体的调节作用。方法:将SH-SY5Y细胞接种于孔板内,细胞贴壁后分3组干预:对照组不加入任何药物,模型组加入20μmol/L β-淀粉样蛋白1-42,法舒地尔组同时加入20μmol/L β-淀粉样蛋白1-42与15 mg/L法舒地尔,干预24 h后,采用MTT法检测细胞活性,TUNEL染色检测细胞凋亡,qRT-PCR和Western blot检测凋亡相关蛋白表达,免疫荧光染色和Western blot检测线粒体自噬相关蛋白表达,免疫荧光染色和Western blot检测NLRP3炎症小体相关蛋白表达。结果与结论:(1)与对照组比较,模型组细胞活性降低、凋亡率升高(P<0.05);与模型组比较,法舒地尔组细胞活性升高、凋亡率降低(P<0.05);(2)qRT-PCR和Western blot检测结果显示,与对照组比较,模型组细胞Bax mRNA与蛋白表达升高(P<0.05),Bcl-2 mRNA与蛋白表达降低(P<0.05);与模型组比较,法舒地尔组细胞Bax mRNA与蛋白表达降低(P<0.05),Bcl-2 mRNA与蛋白表达升高(P<0.05);(3)免疫荧光染色和Western blot检测结果显示,与对照组相比,模型组细胞PINK1、帕金森病蛋白和LC3蛋白表达降低(P<0.05),p62蛋白表达升高(P<0.05);与模型组相比,法舒地尔组细胞PINK1、帕金森病蛋白和LC3蛋白表达升高(P<0.05),p62蛋白表达降低(P<0.05);(4)免疫荧光染色和Western blot检测结果显示,与对照组相比,模型组细胞NLRP3、ASC、Caspase-1和白细胞介素1β蛋白表达升高(P<0.05);与模型组相比,法舒地尔组细胞NLRP3、ASC、Caspase-1和白细胞介素1β蛋白表达降低(P<0.05);(5)结果表明,法舒地尔可以减轻β-淀粉样蛋白1-42诱导的SH-SY5Y细胞凋亡,其机制可能与激活线粒体自噬且抑制NLRP3炎症小体激活有关。

Lithium intercalation/de-intercalation behavior of a composite Sn/C thin film fabricated by magnetron sputtering

A tin film of 320 nm in thickness on Cu foil and its composite film with graphite of-50 nm in thickness on it were fabricated by magnetron sputtering. The surface morphology, composition, surface distributions of alloy elements, and lithium intercalation/de-intercalation behaviors of the fabricated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, electron probe microanalyzer （EPMA）, X-ray photoelectron spectroscopy （XPS）, inductively coupled plasma atomic emission spectrometry （ICP）, cyclic voltammetry （CV）, and galvanostatic charge/discharge （GC） measurements. It is found that the lithium intercalation/de-intercalation behavior of the Sn film can be significantly improved by its composite with graphite. With cycling, the discharge capacity of the Sn film without composite changes from 570 mAh/g of the 2nd cycle to 270 mAh/g of the 20th cycle, and its efficiency for the discharge and charge is between 90% and 95%. Nevertheless, the discharge capacity of the composite Sn/C film changes from 575 mAh/g of the 2nd cycle to 515 mAh/g of the 20th cycle, and its efficiency for the discharge and charge is between 95% and 100%. The performance improvement of tin by its composite with graphite is ascribed to the retardation of the bulk tin cracking from volume change during lithium intercalation and de-intercalation, which leads to the pulverization of tin.

Effects of Bias Voltage on the Structure and Mechanical Properties of Thick CrN Coatings Deposited by Mid-Frequency Magnetron Sputtering

Thick CrN coatings were deposited on Si （111） substrates by electron source assisted mid-frequency magnetron sputtering working at 40 kHz. The deposition rate, structure, and microhardness of the coatings were strongly influenced by the negative bias voltage （Vb）. The deposition rate reached 8.96 μm/h at a Vb of -150 V. X-ray diffraction measurement revealed strong CrN （200） orientation for films prepared at low bias voltages. At a high bias voltage of Vb less than -25 V both CrN （200） and （111） were observed. Large and homogeneous grains were observed by both atomic force microscopy and scanning electron microscopy in samples prepared under optimal conditions. The samples exhibited a fibrous microstructure for a low bias voltage and a columnar structure for VD less than -150 V.

Effects of sputtering power and annealing temperature on surface roughness of gold films for high-reflectivity synchrotron radiation mirrors

Gold films deposited by direct current magnetron sputtering are used for synchrotron radiation optics. In this study, the microstructure and surface roughness of gold films were investigated for the purpose of developing high-reflectivity mirrors. The deposition process was first optimized. Films were fabricated at different sputtering powers (15, 40, 80, and 120 W) and characterized using grazing incidence X-ray reflectometry, X-ray diffraction, and atomic force microscopy. The results showed that all the films were highly textured, having a dominant Au (111) orientation, and the film deposited at 80 W had the lowest surface roughness. Subsequently, post-deposition annealing from 100 to 200℃ in a vacuum was performed on the films deposited at 80 W to investigate the effect of annealing on the microstructure and surface roughness of the films. The grain size, surface roughness, and their relationship were investigated as a function of annealing temperature. AFM and XRD results revealed that at annealing temperatures of 175 ℃ and below, microstructural change of the films was mainly manifested by the elimination of voids. At annealing temperatures higher than 175℃, grain coalescence occurred in addition to the void elimination, causing the surface roughness to increase.

Study of nanocrystalline VO_2 thin films prepared by magnetron sputtering and post-oxidation

Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70 ℃, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction （XRD） and atomic force microscope （AFM）, respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy （XPS） results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, Eopt2p-3d ： 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.

Fabrication and its characteristics of hard coating Ti-Al-N system prepared by DC magnetron sputtering

Pseudobinary Ti 1 x Al x N films were synthesized on Si (100) wafer by DC magnetron sputtering method using Ti 1 x Al x alloy targets with different Al contents. The composition of the Ti 1 x Al x N films was determined by electron probe microanalysis (EPMA). Structural characteristic was performed by X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM). First principles virtual crystal calculations for the Ti 1 x Al x N disordered alloys were used for the XRD simulations. The crystalline structure of the Ti 0.61 Al 0.39 N film was found to be a metastable single phase with NaCl (B1) structure. Its lattice constant, determined by XRD, was less than that of pure TiN. With the increase of Al content, the lattice constant of B1 phase was continually decreased, while würtzite (B4) structure was observed in the Ti 0.40 Al 0.60 N film. When x reached 0.75, the B1 phase disappeared, and only B4 phase was remained. The critical Al content for the phase transition from NaCl to würtzite structure in this paper was about 0.60, which could be explained by both the thermodynamic model and the electron theory. As-deposited Ti 1 x Al x N films exhibited excellent mechanical properties. Hardness measurements of Ti 1 x Al x N films showed a high value of 45GPa for x=0.39 and was decreased to value of 27 GPa with increasing Al at x=0.60.

Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering

In this paper a numerical simulation of a planar DC magnetron discharge is performed with the Particle-in Cell/Monte Carlo Collision （PIC/MCC） method. The magnetic field used in the simulation is calculated with finite element method according to experimental configuration. The simulation is carried out under the condition of gas pressure of 0.665 Pa and voltage magnitude of 400V. Typical results such as the potential distribution, charged particle densities, the discharge current density and ion flux onto the target are calculated. The erosion profile from the simulation is compared with the experimental data. The maximum erosion position corresponds to the place where the magnetic field lines are parallel to the target surface.

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.