真空紫外协同Co^(2+)催化过硫酸氢钾降解罗丹明B

有机染料具有毒性强、色度高、不易降解等特性,为了高效去除有机染料,实验以真空紫外(VUV)为光源,研究了VUV协同Co^(2+)催化过硫酸氢钾(PMS)降解典型有机染料罗丹明B(RhB)的反应机制和转化途径.结果表明:①在RhB初始浓度为80 mg/L,Co^(2+)和PMS投加量分别为15μmol/L、0.5 mmol/L的条件下,VUV/Co^(2+)/PMS体系反应10 min,RhB去除率可达99.1%.VUV/Co^(2+)/PMS体系对RhB降解遵循一级动力学规律,反应速率常数(k)随初始质量浓度的增加而减小.②溶液初始pH对反应速率有较大的影响,随着pH减小,反应速率也同时减小.投加量为30 mmol/L的HCO_(3)^(−)、Cl^(−)均表现出显著的抑制作用,相较于对照组,RhB去除率由99.1%分别降至66.0%、84.2%,而NO_(3)^(−)和SO_(4)^(2−)抑制作用不显著;印染助剂柠檬酸钠也会显著抑制RhB降解.③自由基捕获实验和电子顺磁共振(EPR)测试结果表明,VUV/Co^(2+)/PMS体系中存在的氧化物种包括硫酸根自由基(SO_(4)^(−)·)、羟基自由基(·OH)、单线态氧(1O2).④根据紫外可见吸收光谱和质谱结果,初步推断RhB分子降解主要通过活性氧(ROS)攻击造成共轭结构破坏和N-位脱乙基等作用.另外,对总有机碳(TOC)进行测试,30 min时RhB矿化度可达到43.8%.研究显示,VUV/Co^(2+)/PMS体系能够有效去除RhB.

Neutral and metallic vs.charged and semiconducting surface layer in acceptor doped CeO_(2)

The monomolecular surface layer of acceptor doped CeO_(2) may become neutral and metallic or charged and semiconducting.This is revealed in the theoretical analysis of the oxygen pressure dependence of the surface defects concentration in acceptor doped ceria with two different dopant types and operated under different oxygen pressures.Recently published experimental data for highly reduced Sm0.2Ce0.8O1.9-x(SDC)containing a fixed valence dopant Sm3+are very different from those published for Pr0.1Ce0.9O_(2)-x(PCO) with the variable valence dopant Pr4+/Pr3+being reduced under milder conditions.The theoretical analysis of these experimental results fits very well the experimental results of SDC and PCO.It leads to the following predictions:the highly reduced surface of SDC is metallic and neutral,the metallic surface electron density of state is gs=0.9×10^(38)J-1·m^(-2)(1.4×1015eV^(-1)·cm^(-2)),the electron effective mass is meff,s=3.3me,and the phase diagram of the reduced surface has theα(fcc)structure as in the bulk.In PCO a double layer is predicted to be formed between the surface and the bulk with the surface being negatively charged and semiconducting.The surface of PCO maintains high Pr^(3+) defect concentration as well as relative high oxygen vacancy concentration at oxygen pressures higher than in the bulk.The reasons for the difference between a metallic and semiconducting surface layer of acceptor doped CeO_(2) are reviewed,as well as the key theoretical considerations applied in coping with this problem.For that we make use of the experimental data and theoretical analysis available for acceptor doped ceria.

Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage,in-memory computing, synaptic applications, etc. In recent years, two-dimensional(2D) materials with moderate defects have been discovered to exist memristive feature. However, it is very difficult to obtain moderate defect degree in 2D materials, and studied on modulation means and mechanism becomes urgent and essential. In this work, we realized memristive feature with a bipolar switching and a configurable on/off ratio in a two-terminal MoS_(2) device(on/off ratio ~100), for the first time, from absent to present using laser-modulation to few-layer defect-free MoS_(2)(about 10 layers), and its retention time in both high resistance state and low resistance state can reach 2×10^(4) s. The mechanism of the laser-induced memristive feature has been cleared by dynamic Monte Carlo simulations and first-principles calculations. Furthermore, we verified the universality of the laser-modulation by investigating other 2D materials of TMDs. Our work will open a route to modulate and optimize the performance of 2D semiconductor memristive devices.

Selective core-shell doping enabling high performance 4.6 V-LiCoO_(2)

Constructing robust surface and bulk structure is the prerequisite for realizing high performance high voltage LiCoO_(2)(LCO).Herein,we manage to synthesize a surface Mg-doping and bulk Al-doping coreshell structured LCO,which demonstrates excellent cycling performance.Half-cell shows 94.2%capacity retention after 100 cycles at 3.0-4.6 V(vs.Li/Li^(+))cycling,and no capacity decay after 300 cycles for fullcell test(3.0-4.55 V).Based on comprehensive microanalysis and theoretical calculations,the degradation mechanisms and doping effects are systematically revealed.For the undoped LCO,high voltage cycling induces severe interfacial and bulk degradations,where cracks,stripe defects,fatigue H2 phase,and spinel phase are identified in grain bulk.For the doped LCO,Mg-doped surface shell can suppress the interfacial degradations,which not only stabilizes the surface structure by forming a thin rock-salt layer but also significantly improves the electronic conductivity,thus enabling superior rate performance.Bulk Al-doping can suppress the lattice"breathing"effect and the detrimental H3 to H1-3 phase transition,which minimizes the internal strain and defects growth,maintaining the layered structure after prolonged cycling.Combining theoretical calculations,this work deepens our understanding of the doping effects of Mg and Al,which is valuable in guiding the future material design of high voltage LCO.

Durable hierarchical phosphorus‐doped biphase MoS_(2)electrocatalysts with enhanced H^(*)adsorption

Phase engineering is an efficient strategy for enhancing the kinetics of electrocatalytic reactions.Herein,phase engineering was employed to prepare high‐performance phosphorous‐doped biphase(1T/2H)MoS_(2)(P‐BMS)nanoflakes for hydrogen evolution reaction(HER).The doping of MoS_(2)with P atoms modifies its electronic structure and optimizes its electrocatalytic reaction kinetics,which significantly enhances its electrical conductivity and structural stability,which are verified by various characterization tools,including X‐ray photoelectron spectroscopy,high‐resolution transmission electron microscopy,X‐ray absorption near‐edge spectroscopy,and extended X‐ray absorption fine structure.Moreover,the hierarchically formed flakes of P‐BMS provide numerous catalytic surface‐active sites,which remarkably enhance its HER activity.The optimized P‐BMS electrocatalysts exhibit low overpotentials(60 and 72 mV at 10 mA cm^(−2))in H_(2)SO_(4)(0.5 M)and KOH(1.0 M),respectively.The mechanism of improving the HER activity of the material was systematically studied using density functional theory calculations and various electrochemical characterization techniques.This study has shown that phase engineering is a promising strategy for enhancing the H*adsorption of metal sulfides.

Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS_(2)

Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped 1T-TiS_(2) under high pressure by electrical resistance investigations,synchrotron x-ray diffraction,Raman scattering and theoretical calculations.Up to 70 GPa,an unusual metal-semiconductor-metal transition occurs.Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa is due to the electron localization induced by the intercalated Ti atoms.This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms,and the Anderson localization arising from the disordered intercalation.At pressures exceeding 30.5 GPa,the doped TiS_(2) undergoes a re-metallization transition initiated by a crystal structure phase transition.We assign the most probable space group as P2_(1)2_(1)2_(1).Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.

Co-doped BaFe_(2)As_(2) Josephson junction fabricated with a focused helium ion beam

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.

Enhanced stability of FA-based perovskite:Rare-earth metal compound EuBr_(2) doping

It is highly desirable to enhance the long-term stability of perovskite solar cells(PSCs)so that this class of photovoltaic cells can be effectively used for the commercialization purposes.In this contribution,attempts have been made to use the two-step sequential method to dope EuBr_(2)into FAMAPbI_(3)perovskite to promote the stability.It is shown that the device durability at 85℃in air with RH of 20%-40%is improved substantially,and simultaneously the champion device efficiency of 23.04%is achieved.The enhancement in stability is attributed to two points:(ⅰ)EuBr_(2)doping effectively inhibits the decomposition andα-δphase transition of perovskite under ambient environment,and(ⅱ)EuBr_(2)aggregates in the oxidized format of Eu(BrO_(3))_(3)at perovskite grain boundaries and surface,hampering humidity erosion and mitigates degradation through coordination with H_(2)O.

Small but mighty:Empowering sodium/potassium-ion battery performance with S-doped SnO_(2) quantum dots embedded in N,S codoped carbon fiber network

SnO_(2) has been extensively investigated as an anode material for sodium-ion batteries(SIBs)and potassium-ion batteries(PIBs)due to its high Na/K storage capacity,high abundance,and low toxicity.However,the sluggish reaction kinetics,low electronic conductivity,and large volume changes during charge and discharge hinder the practical applications of SnO_(2)-based electrodes for SIBs and PIBs.Engineering rational structures with fast charge/ion transfer and robust stability is important to overcoming these challenges.Herein,S-doped SnO_(2)(S-SnO_(2))quantum dots(QDs)(≈3 nm)encapsulated in an N,S codoped carbon fiber networks(S-SnO_(2)-CFN)are rationally fabricated using a sequential freeze-drying,calcination,and S-doping strategy.Experimental analysis and density functional theory calculations reveal that the integration of S-SnO_(2) QDs with N,S codoped carbon fiber network remarkably decreases the adsorption energies of Na/K atoms in the interlayer of SnO_(2)-CFN,and the S doping can increase the conductivity of SnO_(2),thereby enhancing the ion transfer kinetics.The synergistic interaction between S-SnO_(2) QDs and N,S codoped carbon fiber network results in a composite with fast Na+/K+storage and extraordinary long-term cyclability.Specifically,the S-SnO_(2)-CFN delivers high rate capacities of 141.0 mAh g^(−1) at 20 A g^(−1) in SIBs and 102.8 mAh g^(−1) at 10 A g^(−1) in PIBs.Impressively,it delivers ultra-stable sodium storage up to 10,000 cycles at 5 A g^(−1) and potassium storage up to 5000 cycles at 2 A g^(−1).This study provides insights into constructing metal oxide-based carbon fiber network structures for high-performance electrochemical energy storage and conversion devices.

不同条件下Co^(2+)对锌电积的影响

Co^(2+)是湿法炼锌中重点关注的有害杂质之一。以含Co^(2+)的硫酸锌溶液作为模拟研究对象,整体研究含Co^(2+)的硫酸锌溶液中分别存在松醇油和Mg^(2+)时,Co^(2+)对锌电解的影响行为。结果表明,当电积液中不存在松醇油和Mg^(2+)时,Co^(2+)的存在造成了锌板的穿孔,出现了轻微“烧板”现象,需要将电积液中Co^(2+)浓度控制在0.6 mg/L以下。当电积液中加入0.21 g/L的松醇油时,Co^(2+)的含量对锌电积的不利影响比电积液中不存在松醇油时的影响更大,需要将电积液中Co^(2+)浓度控制在0.4 mg/L以下。当Mg^(2+)浓度分别为5 g/L和10 g/L时,需要将电积液中Co^(2+)浓度控制在0.4 mg/L和0.2 mg/L以下。当Mg^(2+)浓度为15 g/L时,电积液中的Co^(2+)应尽量除尽。

Cu^(2+)和Co^(2+)促进芬顿氧化处理垃圾渗滤液的研究

通过在传统芬顿体系中加入Cu^(2+)、Co^(2+),研究Cu^(2+)/Co^(2+)/Fe^(2+)/H_(2)O_(2)、Cu^(2+)/Fe^(2+)/H_(2)O_(2)、Co^(2+)/Fe^(2+)/H_(2)O_(2)和Fe^(2+)/H_(2)O_(2)四种芬顿体系对垃圾渗滤液的处理效果,发现当初始pH分别为2、3、4、5、6时,各体系去除COD_(Cr)的效果排序为Cu^(2+)/Co^(2+)/Fe^(2+)/H_(2)O_(2)>Cu^(2+)/Fe^(2+)/H_(2)O_(2)>Co^(2+)/Fe^(2+)/H_(2)O_(2)>Fe^(2+)/H_(2)O_(2),Cu^(2+)、Co^(2+)对芬顿反应效果的提升具有促进作用;Cu^(2+)/Co^(2+)/Fe^(2+)/H_(2)O_(2)和Cu^(2+)/Fe^(2+)/H_(2)O_(2)体系比传统芬顿体系具有更宽的pH响应范围;Cu^(2+)、Co^(2+)的引入明显加快芬顿反应速率,反应时间可由3h缩短至2h。在Cu^(2+)/Co^(2+)/Fe^(2+)/H_(2)O_(2)体系中,m(H_(2)O_(2)):m(COD_(Cr))比值下降至2.4:1,COD_(Cr)去除率仍高达93%,具有优异的处理效果。

5%Ag掺杂对MNO_(2)纳米棒和海胆微球形貌及其甲苯氧化性能的影响

采用水热法制备了MNO_(2)纳米棒和海胆微球,并原位掺杂5%Ag制备了Mn-Ag复合氧化物,利用SEM、XRD、BET、Raman等表征技术对其结构进行表征,并考察不同催化剂对甲苯的去除性能。结果表明:(NH_(4))_(2)S_(2)O_(8)的掺入量会对MNO_(2)的形貌产生影响,当其掺入量为2.28 g时,形成MNO_(2)纳米棒,当其掺入量为6.84 g时,形成MNO_(2)海胆微球;MNO_(2)纳米棒掺杂5%的Ag后,形貌未发生变化,但当MNO_(2)海胆微球掺杂5%Ag时,表面的纳米线较MNO_(2)海胆微球有所增长,且出现了缠绕现象,形成了空心鸟巢状结构;5%Ag掺杂后,对MNO_(2)纳米棒和MNO_(2)海胆微球的晶型未产生影响,均为α-MNO_(2),但5%Ag-MNO_(2)纳米棒出现了Mn2O_(3)的衍射峰;MNO_(2)海胆微球较MNO_(2)纳米棒的比表面积、孔径和孔容均增大,且Ag的掺杂进一步提高了MNO_(2)海胆微球的比表面积、孔径和孔容;MNO_(2)海胆微球比MNO_(2)纳米棒具有更好的甲苯去除性能,且5%Ag掺杂后,MNO_(2)海胆微球对甲苯的去除性能达到最好。

掺杂对2H-MoTe_(2)光电特性影响的第一性原理研究

MoTe_(2)是一种非空间反演对称性半导体,由线性偏振光照射,在无偏压条件下可以直接产生光电流,但是非常微弱.掺杂可以改变电子能带结构和降低空间反演对称性,从而有效的增强光电流.本文基于非平衡格林函数-密度泛函理论,采用第一性原理,计算了本征、Nb掺杂、Ti掺杂和W掺杂2H-MoTe_(2)的能带结构、透射谱和光电流.能带结构表明:Nb掺杂使半导体2H-MoTe_(2)能带穿越费米能级,转变为金属特性;Ti和W掺杂减小了2H-MoTe_(2)的带隙,能带没有穿越费米能级,依然为半导体.掺杂都降低2H-MoTe_(2)的反演对称对称性,从本征的D3h转变为Cs.从而在线偏振光的照射下可以有效的提高2H-MoTe_(2)的光电流.同时,发现掺杂可以提高单层2H-MoTe_(2)在低光子能量下的消光比,如Nb和Ti掺杂单层2H-MoTe_(2)分别在光子能量1.1 eV和1.2 eV处取得39.48和28.48的高消光比.这些结果表明掺杂可以有效增强单层2H-MoTe_(2)的光电流和消光比,可以应用于指导2H-MoTe_(2)在光电器件的设计,特别是在红外光探测领域增添了许多可能.

活性炭电极的改性及对Co^(2+),Mn^(2+)和Ni^(2+)的电吸附性能

以商用活性炭(AC)为原料,分别采用磷酸和氢氧化钠改性的方法制备了两种不同的改性活性炭电极材料.采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、Brunauer-Emmett-Teller(BET)测试、傅里叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)等手段以及电化学分析方法,对改性前后活性炭材料的表面性质和电化学性能进行了探究.结果表明,H_(3)PO_(4)改性使活性炭的孔隙分布更加密集,NaOH改性使活性炭表面的孔隙结构更加清晰均匀;H_(3)PO_(4)和NaOH改性均使活性炭的比表面积增加.循环伏安测试结果表明,改性前后活性炭电极在低扫描速率下均具备良好的双电层特性,并且两种改性处理均能提高活性炭电极的比电容;当扫描速率为5 mV/s时,未改性、H_(3)PO_(4)以及NaOH改性活性炭电极的比电容分别为36.51,77.25和85.19 F/g.电吸附实验结果证明,两种改性活性炭电极对Co^(2+),Mn^(2+)和Ni^(2+)均有较好的去除效果,电吸附过程均更加符合Langmuir模型,在初始浓度、电压和pH相同的条件下,NaOH改性电极对Co^(2+),Mn^(2+)和Ni^(2+)具有更高的去除率和吸附容量,去除率可分别达到96.84%,94.37%和96.90%,吸附容量分别为140.8,111.4和108.5 mg/g.

pH对δ-MnO_(2)吸附硫酸锰溶液中Co^(2+)、Ni^(2+)的影响

硫酸锰溶液中重金属离子的深度净化,一直是锰行业研究的热点和重点。利用X射线衍射(XRD)、扫描电镜(SEM)和红外光谱(FT-IR)等手段对所制备的δ-MnO_(2)进行表征,利用Visual Minteq软件模拟硫酸锰溶液中Mn、Co和Ni的离子形态随pH的变化关系,研究不同pH条件对δ-MnO_(2)吸附硫酸锰溶液中Co^(2+)、Ni^(2+)的影响。结果表明:δ-MnO_(2)结晶性较差,缺陷和空隙较多,表面羟基丰富。随着硫酸锰溶液pH升高,δ-MnO_(2)对于Co^(2+)和Ni^(2+)吸附率逐渐增加,Co^(2+)比Ni^(2+)更容易被吸附。在低pH下,δ-MnO_(2)吸附效果受结构缺陷和空隙影响,pH高于5时,在表面负电荷和羟基的共同作用下大量吸附Co^(2+)和Ni^(2+),Co^(2+)、Ni^(2+)吸附率最高达到99.98%、89.53%。对吸附后δ-MnO_(2)进行XRD和FT-IR分析进一步验证了吸附机理,为解决锰系电池原材料硫酸锰溶液中重金属杂质离子难去除问题提供一定基础。

氮掺杂荧光碳点用于Co^(2+)的超灵敏检测及细胞成像

首次以金银花和乙二胺为原料,通过水热法合成出性能优异的氮掺杂碳点(N-CDs)。制备的N-CDs具有丰富的官能团、良好的水溶性、低细胞毒性、高的荧光稳定性和良好的生物相容性。在最佳条件下,N-CDs能够高选择性地检出Co2+,N-CDs的荧光强度在0.5~3.6 nmol·L^(-1)范围内被Co^(2+)线性猝灭,检出限低至1.38 nmol·L^(-1),其猝灭机制属于内滤效应和静态猝灭。该方法也已成功应用于实际样品的精确分析。此外,N-CDs还可用于细胞成像及细胞内Co^(2+)传感。

改性TiO_(2)在光电协同下处理偶氮染料废水的研究进展

偶氮染料(AZO)是一类难被生物降解的水溶性高分子有机物,近些年来,由于良好的染色性能被广泛应用于印染等相关行业,但AZO废水一旦排入自然水体将会造成重大的环境污染问题。本文主要介绍了不同类型的改性TiO_(2)对AOZ废水的处理效果并分析了作用原理,对比分析了单一TiO_(2)与改性TiO_(2)的优缺点,积极探索改性TiO_(2)催化剂的催化机理,解析金属和非金属掺杂在其中的具体作用,为今后更加精准地控制掺杂金属或者非金属比例、提高催化剂效率提供科学依据和技术支持。

Carbon Doping Triggered Efficient Electrochemical Hydrogen Evolution of Cross-Linked Porous Ru-MoO_(2) Via Solid-Phase Reaction Strategy

The defect-free structure of Mo-based materials is a“double-edged sword”,which endows the material with excellent stability,but limits its chemical versatility and application in electrochemical hydrogen evolution reaction(HER).Carbon doping engineering is an attractive strategy to effectively improve the performance of Mo-based catalyst and maintain their stability.Herein,we report a cross-linked porous carbon-doped MoO_(2)(C–MoO_(2))-based catalyst Ru/C–MoO_(2) for electrochemical HER,which is prepared by the convenient redox solid-phase reaction(SPR)of porous RuO_(2)/Mo_(2)C composite precursor.Theoretical studies reveal that due to the presence of carbon atoms,the electronic structure of C–MoO_(2) has been properly adjusted,and the loaded small Ru nanoparticles provide a fast water dissociation rate and moderate H adsorption strength.In electrochemical studies under a pH-universal environment,Ru/C–MoO_(2) electrocatalyst exhibits a low overpotential at a current density of 10 mA cm^(-2) and has a low Tafel slope.Meanwhile,Ru/C-MoO_(2) has excellent stability for more than 100 h at an initial current density of 100 mA cm^(-2).

Ce掺杂Ni_(2)P纳米片的电子调控促进高效析氧

设计高效非贵金属析氧反应(OER)电催化剂对电化学能量转换具有非常重要的意义.本文通过水热法和煅烧法,成功制备了铈(Ce)掺杂磷化镍(Ni_(2)P)纳米片催化剂Ce-Ni_(2)P.微量Ce掺杂使催化剂表面产生丰富的磷空位,并显著调控了催化剂表面的电子结构,优化了催化活性位的化学价态.得益于Ce掺杂对催化剂表面的电子结构调控,Ce-Ni_(2)P催化剂在碱性电解液中表现出优异的OER性能和长期的稳定性.在50和100 mA/cm^(2)电流密度下,Ce-Ni_(2)P的OER过电位分别为241和281 mV,显著优于Ni_(2)P和商用RuO _(2)的过电位.

MOFs衍生多孔TiO_(2)/C、N掺杂Fe_(2)O_(3)复合材料的制备及其光催化性能

将TiO_(2)加入NH_(2)-MIL-101(Fe)前驱体中,采用溶剂热法制备TiO_(2)/NH_(2)-MIL-101(Fe),进一步经高温热处理得到TiO_(2)/C、N掺杂Fe_(2)O_(3)复合材料(TiO_(2)/C、N-Fe_(2)O_(3))。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、光电子能谱(XPS)、紫外-可见分光漫反射(UV-Vis DRS)和荧光光谱(PL)等方法对所得样品的晶体结构、形貌特征、组成及光谱特性进行表征。在模拟太阳光照射下对罗丹明B(RhB)溶液进行降解,评价其光催化活性。结果表明,C、N均匀掺杂在Fe_(2)O_(3)中,TiO_(2)复合C、N掺杂Fe_(2)O_(3)后禁带宽度减小,模拟太阳光照射2.5 h后,在0.1 g/L TiO_(2)/C、N-Fe_(2)O_(3)复合材料的光催化作用下,10 mg/L罗丹明B的去除率达到95%,速率常速为0.0192 min^(-1),效果较TiO_(2)和C、N-Fe_(2)O_(3)有明显提高。所得复合材料稳定性好、可重复利用。MOFs衍生多孔C、N掺杂Fe_(2)O_(3)与TiO_(2)的复合缩短了带隙,强化了空穴与电子的分离从而提高可见光催化活性。