Zero‐dimensional carbon dots(0D C‐dots)and one‐dimensional sulfide cadmium nanowires(1D CdS NWs)were prepared by microwave and solvothermal methods,respectively.A series of heterogeneous photocatalysts that consist...Zero‐dimensional carbon dots(0D C‐dots)and one‐dimensional sulfide cadmium nanowires(1D CdS NWs)were prepared by microwave and solvothermal methods,respectively.A series of heterogeneous photocatalysts that consisted of 1D CdS NWs that were modified with 0D C‐dots(C‐dots/CdS NWs)were synthesized using chemical deposition methods.The mass fraction of C‐dots to CdS NWs in these photocatalysts was varied.The photocatalysts were characterized using X‐ray diffraction,scanning electron microscopy,transmission electron microscopy,X‐ray photoelectron spectroscopy,and ultraviolet‐visible spectroscopy.Their photocatalytic performance for the spitting of water and the degradation of rhodamine B(RhB)under visible light irradiation were investigated.The photocatalytic performance of the C‐dots/CdS NWs was enhanced when compared with that of the pure CdS NWs,with the 0.4%C‐dots/CdS NWs exhibiting the highest photocatalytic activity for the splitting of water and the degradation of RhB.The enhanced photocatalytic activity was attributed to a higher carrier density because of the heterojunction between the C‐dots and CdS NWs.This heterojunction improved the electronic transmission capacity and promoted efficient separation of photogenerated electrons and holes.展开更多
The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emi...The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （UV） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.展开更多
Exploring a new strategy for the removal of adsorbed CO (CO^(*)) on a Pt surface at a low potential is the key to achieving enhanced catalysis for the formic acid oxidation reaction (FAOR);however, the development of ...Exploring a new strategy for the removal of adsorbed CO (CO^(*)) on a Pt surface at a low potential is the key to achieving enhanced catalysis for the formic acid oxidation reaction (FAOR);however, the development of such a strategy remains a significant challenge. Herein, we report a class of Au/PtCo heterojunction nanowires (HNWs) as efficient electrocatalysts for accelerating the FAOR. This heterojunction structure and the induced Co alloying effects can facilitate formic acid adsorption/activation on Pt with high CO tolerance, generating the FAOR pathway from dehydration to dehydrogenation. The optimized Au_(23)/Pt_(63)Co_(14) HNWs showed the highest specific and mass activities of 11.7 mA cm^(−2)Pt and 6.42 A mg^(−1)Pt reported to date, respectively, which are considerably higher than those of commercial Pt/C. DFT calculations confirmed that the electron-rich Au segment enhances the electronic activity of the PtCo NWs, which not only allows the construction of a highly efficient electron transfer channel for the FAOR but also suppresses CO formation.展开更多
A ZnO–SnO_2 nanowires（NWs） array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet...A ZnO–SnO_2 nanowires（NWs） array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I_（on）/I_（off） ratios（up to 10~3）, good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices.展开更多
This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet （UV） wavelength region. In ...This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet （UV） wavelength region. In this work, silicon nanowire arrays were prepared on p-type （100）-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide （ZnO） nanowires on a silicon nanowire （SiNW） array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current-voltage and capacitance-voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at -t-2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ± 2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination （wavelength = 365 nm）. The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices.展开更多
Developing an efficient photocatalyst,catalyzing formic acid(FA) dehydrogenation,can satisfy the demand of the H_(2) energy.Herein,a graphitic carbon nitride(gC_(x)N_(4))-based nanosheet(x=3.2,3.6 or 3.8) with melem r...Developing an efficient photocatalyst,catalyzing formic acid(FA) dehydrogenation,can satisfy the demand of the H_(2) energy.Herein,a graphitic carbon nitride(gC_(x)N_(4))-based nanosheet(x=3.2,3.6 or 3.8) with melem rings conjugated by Schiff-base bond(N=C-C=N) was synthesized,tuning the bandgaps(Eg) of graphitic carbon nitride(g-C_(3) N_(4)) in the range of 1.8 400 nm) without any additive at 25℃,which is the best value among ever-reported ones.This work provides a new strategy to boost dehydrogenation photocatalysis of FA,which will be promising for practical application of H2 in future energy field.展开更多
基金financially supported by the Research Fund of State Key Laboratory for Marine Corrosion and Protection of Luoyang Ship Material Research Institute(LSMRI)(KF160413)the National Natural Science Foundation of China(21301161,41376126)~~
文摘Zero‐dimensional carbon dots(0D C‐dots)and one‐dimensional sulfide cadmium nanowires(1D CdS NWs)were prepared by microwave and solvothermal methods,respectively.A series of heterogeneous photocatalysts that consisted of 1D CdS NWs that were modified with 0D C‐dots(C‐dots/CdS NWs)were synthesized using chemical deposition methods.The mass fraction of C‐dots to CdS NWs in these photocatalysts was varied.The photocatalysts were characterized using X‐ray diffraction,scanning electron microscopy,transmission electron microscopy,X‐ray photoelectron spectroscopy,and ultraviolet‐visible spectroscopy.Their photocatalytic performance for the spitting of water and the degradation of rhodamine B(RhB)under visible light irradiation were investigated.The photocatalytic performance of the C‐dots/CdS NWs was enhanced when compared with that of the pure CdS NWs,with the 0.4%C‐dots/CdS NWs exhibiting the highest photocatalytic activity for the splitting of water and the degradation of RhB.The enhanced photocatalytic activity was attributed to a higher carrier density because of the heterojunction between the C‐dots and CdS NWs.This heterojunction improved the electronic transmission capacity and promoted efficient separation of photogenerated electrons and holes.
文摘The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （UV） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.
基金The authors are grateful for the financial support of this work from the National Science Fund for Distinguished Young Scholars(No.52025133)Tencent Foundation through the XPLORER PRIZE,the Beijing Natural Science Foundation(JQ18005)Young Thousand Talented Program,and Postdoctoral Science Foundation of China.(2020M680200).
文摘Exploring a new strategy for the removal of adsorbed CO (CO^(*)) on a Pt surface at a low potential is the key to achieving enhanced catalysis for the formic acid oxidation reaction (FAOR);however, the development of such a strategy remains a significant challenge. Herein, we report a class of Au/PtCo heterojunction nanowires (HNWs) as efficient electrocatalysts for accelerating the FAOR. This heterojunction structure and the induced Co alloying effects can facilitate formic acid adsorption/activation on Pt with high CO tolerance, generating the FAOR pathway from dehydration to dehydrogenation. The optimized Au_(23)/Pt_(63)Co_(14) HNWs showed the highest specific and mass activities of 11.7 mA cm^(−2)Pt and 6.42 A mg^(−1)Pt reported to date, respectively, which are considerably higher than those of commercial Pt/C. DFT calculations confirmed that the electron-rich Au segment enhances the electronic activity of the PtCo NWs, which not only allows the construction of a highly efficient electron transfer channel for the FAOR but also suppresses CO formation.
基金supported by the National Science Foundation of China(No.61504136)the State Key Laboratory of Applied Optics,Changchun Institute of Optics,Fine and Physics,Chinese Academy of Sciences
文摘A ZnO–SnO_2 nanowires（NWs） array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I_（on）/I_（off） ratios（up to 10~3）, good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices.
文摘This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet （UV） wavelength region. In this work, silicon nanowire arrays were prepared on p-type （100）-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide （ZnO） nanowires on a silicon nanowire （SiNW） array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current-voltage and capacitance-voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at -t-2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ± 2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination （wavelength = 365 nm）. The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices.
基金financially supported by Heilongjiang Science Foundation(No.LH2020B006)the National Natural Science Foundation of China(Nos.51871078,21871221 and 21602175)+1 种基金the Fundamental Research Funds for the Central Universities(No.3102017jc01001)Start-Up Funding for Class D Talent of Xi’an University of Architecture and Technology(No.1608720038)。
文摘Developing an efficient photocatalyst,catalyzing formic acid(FA) dehydrogenation,can satisfy the demand of the H_(2) energy.Herein,a graphitic carbon nitride(gC_(x)N_(4))-based nanosheet(x=3.2,3.6 or 3.8) with melem rings conjugated by Schiff-base bond(N=C-C=N) was synthesized,tuning the bandgaps(Eg) of graphitic carbon nitride(g-C_(3) N_(4)) in the range of 1.8 400 nm) without any additive at 25℃,which is the best value among ever-reported ones.This work provides a new strategy to boost dehydrogenation photocatalysis of FA,which will be promising for practical application of H2 in future energy field.
