The highly （1301） oriented triple system of [CoPt/C]n/Ag films was deposited on glass substrates by DC and RF magnetron sputtering. After annealing at 600℃ for 30 min, thin films become magnetically hard with coerc...The highly （1301） oriented triple system of [CoPt/C]n/Ag films was deposited on glass substrates by DC and RF magnetron sputtering. After annealing at 600℃ for 30 min, thin films become magnetically hard with coercivities in the range of 160-875 kA/m because of high anisotropy associated with the L10 ordered phase. C doping plays an important role in improving （001） texture and reducing the intergrain interactions. The oriented growth of CoPt films was influenced strongly by the number of repetitions （n） of CoPt/C. By controlling the C content and the number of repetitions （n） of CoPt/C, nearly perfect （001） orientation can be obtained in the [CoPt3nm/C3nm]5/Ag50 nm.展开更多
CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the orde...CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering temperature of CoPt films. A nearly perfect （001） texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing temperature.展开更多
ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The p...ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The properties are characterized by X-ray diffraction,atomic force microscopy and transmission spectra.The parallel oriented ZnO films with mixed orientation for (100) and (110) planes are achieved on glass at the substrate temperature of 200℃ and the source temperature of 280℃,and a qualitative explanation is given for the forming of the mixed orientation.AFM images show that the surface is somewhat rough for the parallel oriented ZnO films.The transmission spectrum exhibits a high transmittance of about 85% in the visible region and shows an optical band gap about 3.25eV at room temperature.展开更多
Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation ...Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation frequency or working pressure,but increase firstly and then decrease with the increase of plasma power density.Raman spectra show that the crystallinity and the average grain sizes of the films strongly depend on the temperature of substrate and the concentration of silane.However,the plasma excitation frequency only has effect on the crystallinity,and a maximum occurs during the further increase of plasma excitation frequency.From XRD and TEM experiments,three preferential crystalline orientations (111),(220) and (311) are observed,and the average grain sizes are different for every crystalline orientation.展开更多
Boron carbide/natural rubber latex(B_4 C/NRL)flexible films were prepared via dip-molding with B_4 C content in the range of 5–55 wt% for thermal neutron(0.0253 e V) shielding. B_4 C was well dispersed in NRL accordi...Boron carbide/natural rubber latex(B_4 C/NRL)flexible films were prepared via dip-molding with B_4 C content in the range of 5–55 wt% for thermal neutron(0.0253 e V) shielding. B_4 C was well dispersed in NRL according to microscopic observation. Both the inside and outside surfaces of the film were smooth. For B_4 C/NRL flexible films, the minimum elongation at break was greater than 600%, the minimum tensile strength was greater than 12 MPa, and the hardness was in the range of 35–55 HA,which were suitable for preparing flexible wearable products. The attenuation efficiencies of the B_4 C/NRL flexible films for thermal neutrons were also calculated. The B_4 C/NRL flexible films exhibit good attenuation effect for thermal neutrons.展开更多
Effect of C：F deposition on SiCOH etching in a CHF3 dual-frequency capacitively couple plasma, driven by a high-frequency source of 60 MHz （HF） and a low-frequency source of 2 MHz （LF） simultaneously, is investig...Effect of C：F deposition on SiCOH etching in a CHF3 dual-frequency capacitively couple plasma, driven by a high-frequency source of 60 MHz （HF） and a low-frequency source of 2 MHz （LF） simultaneously, is investigated. With the increase in LF power, the change of C：F layer from dense C：F layer to porous C：F layer and further to C：F filling gaps was observed, which led to the transition from films deposition to films etching. The change of C：F layer is related to the bombardment by energetic ions and CF2 concentration in the plasma. As the LF power increased to 35 - 40 W, the energetic ions and the low CF2 concentration led to a suppression of C：F deposition. Therefore, the SiCOH films can be etched at higher LF power.展开更多
Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) ...Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.展开更多
Under optimal conditions free-standing high quality diamond films were prepared by DC arc plasma jet CVD method at a growth rate of 7-10 Pm/h. Surface and cross section morphologies of the diamond films were observed ...Under optimal conditions free-standing high quality diamond films were prepared by DC arc plasma jet CVD method at a growth rate of 7-10 Pm/h. Surface and cross section morphologies of the diamond films were observed by SEM. Raman spectrometer wasused to characterize the quality of diamond films. The IR transmittivity measured by IR spectrometer is close to the theoretical value ofabout 71% in the far infrared band. The thermal conductivity measured by photothermal deflection exceeds 18 W/cm' K. <l 10> is thepreferential growth orientation of the films detected by X-ray diffractometer. As s result, the extremely high temperature of DC arc plasma jet can produce supersaturated atomic hydrogen, which played an important role in the process for the deposition of high quality diamond films.展开更多
Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen...Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds展开更多
基金This work was financially supported by the National Natural Science Foundation of China (No. 10574085) and the Natural Science Foundation of Shanxi Province, China (No. 20041032)
文摘The highly （1301） oriented triple system of [CoPt/C]n/Ag films was deposited on glass substrates by DC and RF magnetron sputtering. After annealing at 600℃ for 30 min, thin films become magnetically hard with coercivities in the range of 160-875 kA/m because of high anisotropy associated with the L10 ordered phase. C doping plays an important role in improving （001） texture and reducing the intergrain interactions. The oriented growth of CoPt films was influenced strongly by the number of repetitions （n） of CoPt/C. By controlling the C content and the number of repetitions （n） of CoPt/C, nearly perfect （001） orientation can be obtained in the [CoPt3nm/C3nm]5/Ag50 nm.
基金supported by the Natural Science Foundation of China (No. 60776008)the Program for New Century Excellent Talents in Universities, China (No. NECT-07-0527)the Key Project of Chinese Ministry of Education (No. 207020)
文摘CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering temperature of CoPt films. A nearly perfect （001） texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing temperature.
文摘ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The properties are characterized by X-ray diffraction,atomic force microscopy and transmission spectra.The parallel oriented ZnO films with mixed orientation for (100) and (110) planes are achieved on glass at the substrate temperature of 200℃ and the source temperature of 280℃,and a qualitative explanation is given for the forming of the mixed orientation.AFM images show that the surface is somewhat rough for the parallel oriented ZnO films.The transmission spectrum exhibits a high transmittance of about 85% in the visible region and shows an optical band gap about 3.25eV at room temperature.
文摘Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation frequency or working pressure,but increase firstly and then decrease with the increase of plasma power density.Raman spectra show that the crystallinity and the average grain sizes of the films strongly depend on the temperature of substrate and the concentration of silane.However,the plasma excitation frequency only has effect on the crystallinity,and a maximum occurs during the further increase of plasma excitation frequency.From XRD and TEM experiments,three preferential crystalline orientations (111),(220) and (311) are observed,and the average grain sizes are different for every crystalline orientation.
基金supported by the National Natural Science Foundation of China(No.11405149)the Sichuan Academic and Technical Leader Program(No.DTR201501)
文摘Boron carbide/natural rubber latex(B_4 C/NRL)flexible films were prepared via dip-molding with B_4 C content in the range of 5–55 wt% for thermal neutron(0.0253 e V) shielding. B_4 C was well dispersed in NRL according to microscopic observation. Both the inside and outside surfaces of the film were smooth. For B_4 C/NRL flexible films, the minimum elongation at break was greater than 600%, the minimum tensile strength was greater than 12 MPa, and the hardness was in the range of 35–55 HA,which were suitable for preparing flexible wearable products. The attenuation efficiencies of the B_4 C/NRL flexible films for thermal neutrons were also calculated. The B_4 C/NRL flexible films exhibit good attenuation effect for thermal neutrons.
基金supported by National Natural Science Foundation of China (Nos.10575074, 10635010)
文摘Effect of C：F deposition on SiCOH etching in a CHF3 dual-frequency capacitively couple plasma, driven by a high-frequency source of 60 MHz （HF） and a low-frequency source of 2 MHz （LF） simultaneously, is investigated. With the increase in LF power, the change of C：F layer from dense C：F layer to porous C：F layer and further to C：F filling gaps was observed, which led to the transition from films deposition to films etching. The change of C：F layer is related to the bombardment by energetic ions and CF2 concentration in the plasma. As the LF power increased to 35 - 40 W, the energetic ions and the low CF2 concentration led to a suppression of C：F deposition. Therefore, the SiCOH films can be etched at higher LF power.
基金Project(51271012)supported by the National Natural Science Foundation of China
文摘Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.
文摘Under optimal conditions free-standing high quality diamond films were prepared by DC arc plasma jet CVD method at a growth rate of 7-10 Pm/h. Surface and cross section morphologies of the diamond films were observed by SEM. Raman spectrometer wasused to characterize the quality of diamond films. The IR transmittivity measured by IR spectrometer is close to the theoretical value ofabout 71% in the far infrared band. The thermal conductivity measured by photothermal deflection exceeds 18 W/cm' K. <l 10> is thepreferential growth orientation of the films detected by X-ray diffractometer. As s result, the extremely high temperature of DC arc plasma jet can produce supersaturated atomic hydrogen, which played an important role in the process for the deposition of high quality diamond films.
文摘Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds
