Interface diffusion of sputtered CoZrNb films on silicon substrate

The amorphous CoZrNb films were deposited by DC magnetron sputtering.The depth distributions of the elements were analyzed by Rutherford backscattering spectrometry(RBS).The results indicate that when the deposition time is longer than 37 min,the film composition keeps constant along the depth.When the deposition time is longer than 45 min,the Co concentration at the interface of the silicon substrate is higher than the average value in the whole film.When the deposition time is longer than 52 min,the Co atoms diffuse into the substrate during the deposition.According to the Co composition profile in the substrate,which were determined from the RBS spectra,the Co diffusion coefficients in the substrate were calculated using the solution of Fick′s second law corresponding to an infinite source with a constant diffusion coefficient.The calculated diffusion coefficients indicate an interstitial assisted diffusion mechanism.

非晶CoZrNb磁性薄膜的研究

研究溅射条件和旋转磁场热处理对 CoZrNb 薄膜结构和性能的影响。结果表明,高的溅射功率和合适的氩气压强对非晶 CoZrNb 薄膜的形成有用,并且这些薄膜的矫顽力较小。旋转磁场热处理将改善薄膜的软磁性能,使得矫顽力进一步减小。对溅射条件对薄膜性能的影响机制和旋转磁场热处理改善薄膜性能的机制作了简要的讨论。

CoZrNb磁控溅射的背散射研究

对于各组份原子质量相差显著的CoZrNb合金,当使用磁控溅射时,在靶和基板之间存在不同的实际源,由这个实际源发生的粒子将在靶死区内背散射沉积。实际源到靶的距离随溅射工作气体压力而变化。对于原子质量较大的Zr和Nb,这种背散射的程度要比原子质量小的Co更严重。背散射沉积薄膜的表面微结构证实,这种背散射沉积过程类似于真空蒸发。为了获得理想配比的CoZrNb薄膜,应该选择合适的溅射工作气体压力。