Human blood plasma-based electronic integrated circuit amplifier configuration

Dear Editor： There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man disease detection and healing, and artificial brain evolutionusl. Here, we report the first development of human plasma-based amplifier circuit in the dis- crete as well as integrated circuit （IC） configuration mode. Electrolytes in the human blood contain an enormous number of charge carriers such as positive and negative molecule/atom ions, which are electri- cally conducting media and therefore can be utilized for developing electronic circuit components and their application circuits. These electronic circuits obvi- ously have very high application impact potential towards bio-medical engineering and medical science and technology.

Radio Frequency Low Noise Amplifier with Linearizing Bias Circuit

A 1.34 GHz-1=60 MHz low noise amplifier （LNA） designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure （NF） of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point （IPldn） of-11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply.

A Very Low Level dc Current Amplifier Using SC Circuit: Effects of Parasitic Capacitances and Duty Ratio on Its Output

This paper describes a very low level dc current amplifier using switched capacitor (SC) circuit to miniaturize and improve its output response speed, instead of the conventionally used high-oh-mage resistor. A switched capacitor filter (SCF) and an offset controller are also used to decrease vibrations and offset voltage at the output of the amplifier. The simulation results show that the parasitic capacitances that are distributed to the input portion of the amplifier have some effect on offset voltage. From the experimental results, it is seen that the duty ratio of the clock cycle of SC circuit should be in the range from 0.05 to 0.70. It is suggested that the proposed very low level dc current amplifier using SC circuit is an effective way to obtain both a faster output response and its miniaturization.

Synthetic plasma and silicon tubular harness-based purebiological transistor amplifier circuit

Dear Editor:Kosta et al.;first ever reported the development of biologic electronic components viz resistance R,capacitance C,diode D and transistor T using human tissues and human skin.In our early study;,we have demonstrated the feasibility of liquid medium（synthetic blood plasma）to develop bio-transistor,bio-resistor,and bio-capacitor and combined them to form an amplifier using the metallic harness(the interconnecting

A4~12GHz Wideband Balanced MIC Power Amplifier

A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.

A monolithic InGaP/GaAs HBT power amplifier for W-CDMA applications

A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

Latest advances in high-performance light sources and optical amplifiers on silicon

Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.

DESIGN AND ANALYSIS OF INTEGRATED OPERATIONAL AMPLIFIER XD1531 WITH LOW NOISE AT LOW FREQUENCIES

Principles of design are described for the low frequency integrated operationalamplifler XD1531 with low noise. The procedures of design of both the circuit structure and the tran-sistor shape are considered. The first stage of the circuit is designed with the methods of low noise atlow frequencies. The measures which decrease noises, especially, the 1/f noise originating .from thesemiconductor surface state and defects, are used for the transistor structure design. With analysisand comparison to products here and abroad in characteristics, it is shown that XD1531 has a lowernoise index at low frequencies than others, and the effectiveness of design methods for bringing lownoises have been demonstrated.

Design of Si-bipolar Monolithic Main Amplifier IC for Optical Fiber Receivers

A broadband amplifier with transadmittance and transimpedance stages is designed and two types of improved AGC amplifiers are developed on the base of theory study. Making use of the basic amplifier cells, a main amplifier IC for optical-fiber receivers is deliberated. By computer simulating the performances of the designed main amplifier meet the necessity of high gain and wide dynamic range . They are maximum voltage gain of 42 dB, the bandwidth of 730 MHz,the input signal( V p-p )range from 5 mV to 1 V,the output amplitude about 1 V, the dynamic range of 46 dB. The designed circuit containing no inductance and large capacitance will be convenient for realizing integration. A monolithic integrated design of 622 Mb/s main amplifier is completed.

MicroAmplifier^(TM)系列运算放大器的特性及应用

扼要介绍 MicroAmplifier^(TM)系列运算放大器的特性、封装型式及应用技术。

A VERSATILE CURRENT-MODE BIQUAD USING OPERATIONAL AMPLIFIERS

A versatile current-mode biquadratic filter using three operational amplifiers and nine passive elements is proposed. By suitably choosing the output branch, lowpass, bandpass, highpass, bandstop and allpass transfer functions are realized simultaneously without changing the circuit configuration and elements. Two circuits, one is for low frequency application and the other for high frequency, are proposed. The center frequency, quality factor and gain constants of the circuit can be tuned independently. Simulated results show that the circuits work successfully.

A NOVEL Ku-BAND LOW NOISE AMPLIFIER WITH HEMT AND GaAs MMIC

A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated gain larger than 27dB and an input/output VSWRless than 1.4 in the frequency range of 11.7-12.2GHz. The HEMT and the microwave series in-ductance feedback technique are used in the first stage of the amplifier, and a Ku-band MMIC isemployed in the last stage. The key to this design is to achieve an optimum noise match and a min-imum input VSWR matching simultaneously by using the microwave series inductance feedbackmethod. The B J-120 waveguides are used in both input and output of the amplifier.

Error Analysis of Approximate Calculation of Voltage Divider Biased Common-Emitter Amplifier

Voltage divider biasing common emitter amplifier is one of the core contents in analog circuit curriculum, and almost all of traditional textbooks apply approximate calculation method to estimate all characteristic parameters. In calculating quiescent point, transistor base current is generally ignored to get the approximate base potential and emitter current, then other operating parameters, and AC small signal parameters can be acquired. The main purpose of this paper is to compare traditional and Thevenin equivalent methods and to get the difference of the two methods. A Formula is given to calculate the error of the traditional method. Example calculating reveals that the traditional method can generate an error about 10%, and even severe for small signal amplifier with higher quiescent point.

Design of 35 GHz 1 Watt GaAs pHEMT Power Amplifier MMIC

By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.

Low Noise Amplifier Design for Digital Television Applications

The DVB-T (Digital Video Broadcasting—Terrestrial) standard is being deployed in many parts of the world for digital broadcasting services, providing a variety of features extending the capabilities of the older analog ones. In this paper, a two-stage low noise amplifier (LNA) is designed for use with the DVB-T standard. The design is employed based on microstrip. The microwave design meets all the specifications required, achieving input and output return loss below ?10 dB, high gain of 35 dB and high linearity. Low noise figure of 1.3 dB is achieved with the use of pHEMT transistor technology.

Computer Program Calculation for Distortion of Wide-Band Track and Hold Amplifier

Tow different computer calculation methods for distortion of the wide-band diode bridge track and hold amplifier (THA) are presented based on a high frequency Schottky diode model. One of the computer programs calculates the distortion of weekly nonlinear THA based on the KCL and the nonlinear-current method. The other calculates the weekly nonlinear distortion by using a Volterra series method and a nodal formulation. Comparative calculation results for the diode bridge THA have shown good agreement with these two computer program calculation methods, whereas the overall computational efficiency of the nonlinear-current method is better than that of the nodal formulation method in a special evaluation.

Fuzzy System Design Using Current Amplifier for 20 nm CMOS Technology

In the recent decade,different researchers have performed hardware implementation for different applications covering various areas of experts.In this research paper,a novel analog design and implementation of different steps of fuzzy systems with current differencing buffered amplifier(CDBA)are proposed with a compact structure that can be used in many signal processing applications.The proposed circuits are capable of wide input current range,simple structure,and are highly linear.Different electrical parameters were compared for the proposed fuzzy system when using different membership functions.The novelty of this paper lies in the electronic implementation of different steps for realizing a fuzzy system using current amplifiers.When the power supply voltage of CDBA is 2V,it results in 155mW,power dissipation;4.615KΩ,input resistance;366KΩ,output resistances;and 189.09 dB,common-mode rejection ratio.A 155.519 dB,voltage gain,and 0.76V/μs,the slew rate is analyzed when the power supply voltage of CDBAis 3V.The fuzzy system is realized in 20nm CMOS technology and investigated with an output signal of high precision and high speed,illustrating that it is suitable for realtime applications.In this research paper,a consequence of feedback resistance on the adder circuit and the defuzzified circuit is also analyzed and the best results are obtained using 100K resistance.The structure has a low hardware complexity leading to a low delay and a rather high quality.

Realization of a New Current Mode Second-Order Biquad Using Two Current Follower Transconductance Amplifiers (CFTAs)

A new circuit for realization of universal current-mode filter using current Follower Transconductance Amplifiers (CFTAs) is presented. The proposed circuit realizes current-mode low pass, high pass and band pass filter functions simultaneously with a single current source at the input. The band reject and all pass filters can also be obtained from the proposed circuit without any extra hardware. The proposed circuit employs three passive grounded elements and two CFTAs. Linear electronic control of natural frequency ω0 is available in the proposed circuit. The quality factor can be independently adjusted through grounded resistor. The proposed circuit employs two grounded capacitors and a grounded resistor along with two CFTAs. The grounded resistor can be replaced by an OTA based circuit for linear electronic control of quality factor Q0. The circuit exhibits low active and passive sensitivities for ω0 and Q0. Simulation results are obtained using PSPICE software which is in conformity with the theoretical findings.