The Approach of Compensation of Air Refractive Index in Thermal Expansion Coefficients Measurement Based on Laser Feedback Interferometry

We present the thermal expansion coefficient （TEC） measurement technology of compensating for the effect of variations in the refractive index based on a Nd： YA G laser feedback system, the beam frequency is shifted by a pair of aeousto-optic modulators and then the heterodyne phase measurement technique is used. The sample measured is placed in a muffle furnace with two coaxial holes opened on the opposite furnace walls. The measurement beams hit perpendicularly and coaxially on each surface of the sample. The reference beams hit on the reference mirror and the high-refiectivity mirror, respectively. By the heterodyne configuration and computing, the influences of the vibration, distortion of the sample supporter and the effect of variations in the refractive index are measured and largely minimized. For validation, the TECs of aluminum samples are determined in the temperature range of 29-748K, confirming not only the precision within 5 × 10-7 K-1 and the accuracy within 0.4% from 298K to 448K but also the high sensitivity non-contact measurement of the lower reflectivity surface induced by the sample oxidization from 448 K to 748 K.

Curvature Compensated CMOS Bandgap Reference with Novel Process Variation Calibration Technique

A lowtemperature coefficient（ TC） bandgap reference（ BGR） with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio（ PSRR） of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^（-6）/℃-9. 56 × 10^（-6）/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^（-6）/℃.

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.