Traditional magneto-electric vibration sensors and servo accelerometers have severe shortcomings when used to measure vibration where low frequency components predominate.A low frequency characteristic extension for v...Traditional magneto-electric vibration sensors and servo accelerometers have severe shortcomings when used to measure vibration where low frequency components predominate.A low frequency characteristic extension for velocity vibration sensors is presented in this paper.The passive circuit technology,active compensation technology and the closed- cycle pole compensation technology are used to extend the measurable range and to improve low frequency characteristics of sensors.Thses three types of low frequency velocity vibration sensors have been developed and widely adopted in China.展开更多
The presentation will give an overview over different classes of signal impairments in ultra-long-haul and high-speed optical WDM transmission systems and adequate approaches for suppression, mitigation or compensatio...The presentation will give an overview over different classes of signal impairments in ultra-long-haul and high-speed optical WDM transmission systems and adequate approaches for suppression, mitigation or compensation are discussed.展开更多
Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type sil...Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.展开更多
基金The Ministry of Science and Technology Special Foundation Grant No.217Harbin Important Science Technology Foundation Grant No.0014211044
文摘Traditional magneto-electric vibration sensors and servo accelerometers have severe shortcomings when used to measure vibration where low frequency components predominate.A low frequency characteristic extension for velocity vibration sensors is presented in this paper.The passive circuit technology,active compensation technology and the closed- cycle pole compensation technology are used to extend the measurable range and to improve low frequency characteristics of sensors.Thses three types of low frequency velocity vibration sensors have been developed and widely adopted in China.
文摘The presentation will give an overview over different classes of signal impairments in ultra-long-haul and high-speed optical WDM transmission systems and adequate approaches for suppression, mitigation or compensation are discussed.
基金supported by the National Natural Science Foundation of China(No.61471159)the Natural Science Foundation of Heilongjiang Province(No.F201433)+1 种基金the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province(No.2015018)the Special Funds for Science and Technology Innovation Talents of Harbin in China(No.2016RAXXJ016)
文摘Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.
