Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detecti...Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.展开更多
With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been...With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors.However,it is limited by high operating temperature.The current research works are directed towards fabricating high-performance flexible room-temperature(FRT)gas sensors,which are effective in simplifying the structure of MOS-based sensors,reducing power consumption,and expanding the application of portable devices.This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism,performance,flexibility characteristics,and applications.This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors,including pristine MOS,noble metal nanoparticles modified MOS,organic polymers modified MOS,carbon-based materials(carbon nanotubes and graphene derivatives)modified MOS,and two-dimensional transition metal dichalcogenides materials modified MOS.The effect of light-illuminated to improve gas sensing performance is further discussed.Furthermore,the applications and future perspectives of FRT gas sensors are also discussed.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
Metal oxide ion-gated transistors(MOIGTs)have garnered significant attention within the sensing domain due to their potential for achieving heightened sensitivity while consuming minimal energy across diverse scenario...Metal oxide ion-gated transistors(MOIGTs)have garnered significant attention within the sensing domain due to their potential for achieving heightened sensitivity while consuming minimal energy across diverse scenarios.By harnessing the advantageous combination of metal oxides'high carrier mobility and facile surface customization,coupled with the potent signal amplification capabilities of ion-gated transistors,MOIGTs offer a promising avenue for discerning biomolecules,overseeing chemical reactions,p H levels,as well as facilitating gas or light determination.Over the past few decades,the MOIGT field has made remarkable strides in refining device physics,enhancing material properties,showcasing robust sensing capabilities,and broadening its application spectrum.These advancements have simultaneously unveiled new challenges and opportunities,necessitating interdisciplinary expertise to fully unlock the commercial potential of MOIGTs.In this comprehensive review,we offer a snapshot of this swiftly evolving technology,delve into its current applications,and provide insightful recommendations for future directions in the coming decade.展开更多
This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (...This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (LPG), H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein.展开更多
Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad(Si) ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose(TID) damage.展开更多
A simple and new point contact tungsten trioxide (WO3) sensor, which can be prepared by the oxidation of tungsten filaments via in-situ induction heating, likely detects low concentration (ppm level) environmental...A simple and new point contact tungsten trioxide (WO3) sensor, which can be prepared by the oxidation of tungsten filaments via in-situ induction heating, likely detects low concentration (ppm level) environmental pollutants such as NO2. X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) were applied to characterize the phase and the microstructure of the samples, respec-tively. It was found that the synthesized WO3 films exhibited a monoclinic phase and were composed of hierarchical microcrystals and nanocrystals. The point contact WO3 sensor (W-WO3-W) showed rectifying characteristics and an ideal sensing performance of about 110 C. A single semicircle in Nyquist plots was recorded by electrochemical impedance spectroscopy (EIS) at a relatively low temperature of 150 C but faded away above 200 C, which revealed that the sensing process was governed by a determining factor, i.e., grain boundaries at the contact site.展开更多
Ultra-low power transceiver design is proposed for wireless sensor node used in the wireless sensor network(WSN).Typically,each sensor node contains a transceiver so it is required that both hardware and software de...Ultra-low power transceiver design is proposed for wireless sensor node used in the wireless sensor network(WSN).Typically,each sensor node contains a transceiver so it is required that both hardware and software designs of WSN node must take care of energy consumption during all modes of operation including active/sleep modes so that the operational life of each node can be increased in order to increase the lifetime of network.The current declared size of the wireless sensor node is of millimeter order,excluding the power source and crystal oscillator.We have proposed a new 2.4 GHz transceiver that has five blocks namely XO,PLL,PA,LNA and IF.The proposed transceiver incorporates less number of low-drop outs(LDOs)regulators.The size of the transceiver is reduced by decreasing the area of beneficiary components up to 0.41 mm;of core area in such a way that some functions are optimally distributed among other components.The proposed design is smaller in size and consumes less power,<1 mW,compared to other transceivers.The operating voltage has also been reduced to 1 V.This transceiver is most efficient and will be fruitful for the wireless networks as it has been designed by considering modern requirements.展开更多
Path recognition is an inevitable core technology in the development of tracking robot. In this paper,the path tracking system of tracking robot can be realized by image sensor module based on camera to obtain lane im...Path recognition is an inevitable core technology in the development of tracking robot. In this paper,the path tracking system of tracking robot can be realized by image sensor module based on camera to obtain lane image information,and then extract the path through visual servo. The whole system can be divided into seven modules: micro control unit( MCU) processor module,image acquisition module,debugging module,motor drive module,servo drive module,speed sensor module,and voltage conversion module.In image pre-processing part,there is an introduction of binarization processing and the median filtering to strengthen the image information. About recognition algorithm,three key variables which are changed in the movement state are discussed and there are also many auxiliary algorithms that help to improve the path recognition.The experiment can verify that the whole system can accurately abstract the black guide lines from the white track and make the robot moving fast and stable by following the road parameters and conditions.展开更多
A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) ...A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.展开更多
基金supported by the Plan for Science Innovation Talent of Henan Province(No.154100510007)the Natural and Science Foundation in Henan Province(No.162300410179)the Cultivation Foundation of Henan Normal University National Project(No.2017PL04)
文摘Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.
基金This work is supported by This work was supported by the National Key R&D Program of China(Nos.2020YFB2008604 and 2021YFB3202500)the National Natural Science Foundation of China(Nos.61874034 and 51861135105)+1 种基金the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300)Fudan University-CIOMP Joint Fund(E02632Y7H0).
文摘With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors.However,it is limited by high operating temperature.The current research works are directed towards fabricating high-performance flexible room-temperature(FRT)gas sensors,which are effective in simplifying the structure of MOS-based sensors,reducing power consumption,and expanding the application of portable devices.This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism,performance,flexibility characteristics,and applications.This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors,including pristine MOS,noble metal nanoparticles modified MOS,organic polymers modified MOS,carbon-based materials(carbon nanotubes and graphene derivatives)modified MOS,and two-dimensional transition metal dichalcogenides materials modified MOS.The effect of light-illuminated to improve gas sensing performance is further discussed.Furthermore,the applications and future perspectives of FRT gas sensors are also discussed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金supported by the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant No.NY221111)the Natural Science Foundation of Jiangsu Province of China(Grant Nos.BK20220397,BK20230359)+2 种基金the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province(Grant Nos.22KJB430038,22KJB510010)the National Natural Science Foundation of China(Grant Nos.62204130,62288102,and62304112)the National Funds for Distinguished Young Scientists(Grant No.61825503)。
文摘Metal oxide ion-gated transistors(MOIGTs)have garnered significant attention within the sensing domain due to their potential for achieving heightened sensitivity while consuming minimal energy across diverse scenarios.By harnessing the advantageous combination of metal oxides'high carrier mobility and facile surface customization,coupled with the potent signal amplification capabilities of ion-gated transistors,MOIGTs offer a promising avenue for discerning biomolecules,overseeing chemical reactions,p H levels,as well as facilitating gas or light determination.Over the past few decades,the MOIGT field has made remarkable strides in refining device physics,enhancing material properties,showcasing robust sensing capabilities,and broadening its application spectrum.These advancements have simultaneously unveiled new challenges and opportunities,necessitating interdisciplinary expertise to fully unlock the commercial potential of MOIGTs.In this comprehensive review,we offer a snapshot of this swiftly evolving technology,delve into its current applications,and provide insightful recommendations for future directions in the coming decade.
文摘This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (LPG), H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad(Si) ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose(TID) damage.
基金supported by the National Natural Science Foundation of China (Nos.NSAF10876017, NSAF10776017, and91023037)
文摘A simple and new point contact tungsten trioxide (WO3) sensor, which can be prepared by the oxidation of tungsten filaments via in-situ induction heating, likely detects low concentration (ppm level) environmental pollutants such as NO2. X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) were applied to characterize the phase and the microstructure of the samples, respec-tively. It was found that the synthesized WO3 films exhibited a monoclinic phase and were composed of hierarchical microcrystals and nanocrystals. The point contact WO3 sensor (W-WO3-W) showed rectifying characteristics and an ideal sensing performance of about 110 C. A single semicircle in Nyquist plots was recorded by electrochemical impedance spectroscopy (EIS) at a relatively low temperature of 150 C but faded away above 200 C, which revealed that the sensing process was governed by a determining factor, i.e., grain boundaries at the contact site.
基金Supported by Young Scientists Fund of the National Natural Science Foundation of China(61201040)
文摘Ultra-low power transceiver design is proposed for wireless sensor node used in the wireless sensor network(WSN).Typically,each sensor node contains a transceiver so it is required that both hardware and software designs of WSN node must take care of energy consumption during all modes of operation including active/sleep modes so that the operational life of each node can be increased in order to increase the lifetime of network.The current declared size of the wireless sensor node is of millimeter order,excluding the power source and crystal oscillator.We have proposed a new 2.4 GHz transceiver that has five blocks namely XO,PLL,PA,LNA and IF.The proposed transceiver incorporates less number of low-drop outs(LDOs)regulators.The size of the transceiver is reduced by decreasing the area of beneficiary components up to 0.41 mm;of core area in such a way that some functions are optimally distributed among other components.The proposed design is smaller in size and consumes less power,<1 mW,compared to other transceivers.The operating voltage has also been reduced to 1 V.This transceiver is most efficient and will be fruitful for the wireless networks as it has been designed by considering modern requirements.
基金National Natural Science Foundations of China(Nos.61272097,61305014)Natural Science Foundation of Shanghai,China(No.13ZR1455200)+6 种基金Innovation Programs of Shanghai Municipal Education Commission,China(Nos.12ZZ182,14ZZ156)Funding Scheme for Training Young Teachers in Shanghai Colleges,China(No.ZZGJD13006)Key Support Project of Shanghai Science and Technology Committee,China(No.13510501400)Research Startup Foundation of Shanghai University of Engineering Science,China(No.2013-13)The Connotative Construction Projects of Shanghai Local Colleges in the 12th Five-Year,China(No.nhky-2012-10)Shandong Province Young and Middle-Aged Scientists Research Awards Fund,China(No.BS2013DX021)Shandong Academy Young Scientists Fund Project,China(No.2013QN037)
文摘Path recognition is an inevitable core technology in the development of tracking robot. In this paper,the path tracking system of tracking robot can be realized by image sensor module based on camera to obtain lane image information,and then extract the path through visual servo. The whole system can be divided into seven modules: micro control unit( MCU) processor module,image acquisition module,debugging module,motor drive module,servo drive module,speed sensor module,and voltage conversion module.In image pre-processing part,there is an introduction of binarization processing and the median filtering to strengthen the image information. About recognition algorithm,three key variables which are changed in the movement state are discussed and there are also many auxiliary algorithms that help to improve the path recognition.The experiment can verify that the whole system can accurately abstract the black guide lines from the white track and make the robot moving fast and stable by following the road parameters and conditions.
文摘A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.