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X-ray detection based on complementary metal-oxide-semiconductor sensors
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作者 Qian-Qian Cheng Chun-Wang Ma +3 位作者 Yan-Zhong Yuan Fang Wang Fu Jin Xian-Feng Liu 《Nuclear Science and Techniques》 SCIE CAS CSCD 2019年第1期43-48,共6页
Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detecti... Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws. 展开更多
关键词 X-ray detection SIMULATED POSITIONER complementary metal-oxide-semiconductor sensor Effective PIXEL POINTS
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Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor 被引量:7
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作者 Lang-Xi Ou Meng-Yang Liu +2 位作者 Li-Yuan Zhu David Wei Zhang Hong-Liang Lu 《Nano-Micro Letters》 SCIE EI CAS CSCD 2022年第12期310-351,共42页
With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been... With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors.However,it is limited by high operating temperature.The current research works are directed towards fabricating high-performance flexible room-temperature(FRT)gas sensors,which are effective in simplifying the structure of MOS-based sensors,reducing power consumption,and expanding the application of portable devices.This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism,performance,flexibility characteristics,and applications.This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors,including pristine MOS,noble metal nanoparticles modified MOS,organic polymers modified MOS,carbon-based materials(carbon nanotubes and graphene derivatives)modified MOS,and two-dimensional transition metal dichalcogenides materials modified MOS.The effect of light-illuminated to improve gas sensing performance is further discussed.Furthermore,the applications and future perspectives of FRT gas sensors are also discussed. 展开更多
关键词 metal oxide semiconductor Flexible gas sensor Room temperature NANOMATERIALS
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Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology 被引量:2
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作者 王伟 黄北举 +1 位作者 董赞 陈弘达 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期677-683,共7页
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit ... A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored. 展开更多
关键词 optoelectronic integrated circuit complementary metal-oxide-semiconductor technology silicon-based light emitting device ELECTROLUMINESCENCE
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Metal oxide ion gated transistors based sensors
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作者 LI Yang YAO Yu +6 位作者 WANG LeLe WANG LiWei PANG YunCong LUO ZhongZhong ARUNPRABAHARAN Subramanian LIU ShuJuan ZHAO Qiang 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2024年第4期1040-1060,共21页
Metal oxide ion-gated transistors(MOIGTs)have garnered significant attention within the sensing domain due to their potential for achieving heightened sensitivity while consuming minimal energy across diverse scenario... Metal oxide ion-gated transistors(MOIGTs)have garnered significant attention within the sensing domain due to their potential for achieving heightened sensitivity while consuming minimal energy across diverse scenarios.By harnessing the advantageous combination of metal oxides'high carrier mobility and facile surface customization,coupled with the potent signal amplification capabilities of ion-gated transistors,MOIGTs offer a promising avenue for discerning biomolecules,overseeing chemical reactions,p H levels,as well as facilitating gas or light determination.Over the past few decades,the MOIGT field has made remarkable strides in refining device physics,enhancing material properties,showcasing robust sensing capabilities,and broadening its application spectrum.These advancements have simultaneously unveiled new challenges and opportunities,necessitating interdisciplinary expertise to fully unlock the commercial potential of MOIGTs.In this comprehensive review,we offer a snapshot of this swiftly evolving technology,delve into its current applications,and provide insightful recommendations for future directions in the coming decade. 展开更多
关键词 sensorS ion gated transistors metal oxide semiconductors biosensors CHEMOsensorS pH sensors
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用于射频能量收集的低阈值CMOS整流电路设计
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作者 徐雷钧 孙鑫 +1 位作者 白雪 陈建锋 《半导体技术》 CAS 北大核心 2024年第4期365-372,共8页
基于TSMC 180 nm工艺,设计了一款高效率低阈值整流电路。在传统差分输入交叉耦合整流电路的基础上,提出源极与衬底之间增加双PMOS对称辅助晶体管配合缓冲电容的改进结构,对整流晶体管进行阈值补偿。有效缓解了MOS管的衬底偏置效应,降低... 基于TSMC 180 nm工艺,设计了一款高效率低阈值整流电路。在传统差分输入交叉耦合整流电路的基础上,提出源极与衬底之间增加双PMOS对称辅助晶体管配合缓冲电容的改进结构,对整流晶体管进行阈值补偿。有效缓解了MOS管的衬底偏置效应,降低了整流电路的开启阈值电压,针对较低输入信号功率,提高了整流电路的功率转换效率(PCE)。同时将低阈值整流电路三级级联以提高输出电压。测试结果显示,在输入信号功率为-14 dBm@915 MHz时,三级级联低阈值整流电路实现了升压功能,能稳定输出1.2 V电压,峰值PCE约为71.32%。相较于传统结构,该低阈值整流电路更适合用于射频能量收集。 展开更多
关键词 互补金属氧化物半导体(CMOS) 射频能量收集 低阈值电压 RF-DC整流电路 差分输入交叉耦合整流电路
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MEMS矢量水听器敏感结构的后CMOS释放工艺研究 被引量:1
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作者 谭皓宇 刘国昌 +3 位作者 张文栋 张国军 杨玉华 王任鑫 《传感器与微系统》 CSCD 北大核心 2024年第4期33-36,共4页
纤毛式微机电系统(MEMS)矢量水听器可探测水下质点振速等矢量信息,与互补金属氧化物半导体(CMOS)集成能够很大程度地提升其性能。针对纤毛式MEMS矢量水听器的CMOS集成提出了一种方案,该方案在MEMS后处理工艺中,利用侧墙保护和各向异性... 纤毛式微机电系统(MEMS)矢量水听器可探测水下质点振速等矢量信息,与互补金属氧化物半导体(CMOS)集成能够很大程度地提升其性能。针对纤毛式MEMS矢量水听器的CMOS集成提出了一种方案,该方案在MEMS后处理工艺中,利用侧墙保护和各向异性湿法腐蚀从正面释放水听器的十字梁敏感结构。整个后处理过程不需要光刻,降低加工难度的同时,保证了加工结构的精确性。设计出了一种验证性的工艺流程,具体分析了4种不同结构的湿法腐蚀过程。最终完成了这4种结构的工艺流片,对实验结果进行了分析。实验验证了该方案的可行性,为纤毛式MEMS矢量水听器的CMOS集成奠定了基础。 展开更多
关键词 矢量水听器 互补金属氧化物半导体集成 各向异性湿法腐蚀 侧墙保护 结构释放
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金属氧化物半导体MEMS气体传感器研究进展 被引量:2
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作者 尹嘉琦 沈文锋 +3 位作者 吕大伍 赵京龙 胡鹏飞 宋伟杰 《材料导报》 EI CSCD 北大核心 2024年第1期30-43,共14页
随着物联网的快速发展,各领域对气体监测的需求越来越大,基于先进微机电系统(Micro-electro-mechanical systems, MEMS)技术的金属氧化物半导体(Metal oxide semiconductor, MOS)气体传感器在过去几十年里取得了很大发展。MEMS微热板的... 随着物联网的快速发展,各领域对气体监测的需求越来越大,基于先进微机电系统(Micro-electro-mechanical systems, MEMS)技术的金属氧化物半导体(Metal oxide semiconductor, MOS)气体传感器在过去几十年里取得了很大发展。MEMS微热板的多样化设计、MOSs纳米结构的多样化以及机器学习算法的出现为MEMS的传感性能以及智能传感系统的构建提供了很大助力。本文从MEMS气体传感器的分类、制备和应用以及传感器阵列的构建等方面综述了金属氧化物半导体MEMS气体传感器的最新研究进展,并对MEMS基气体传感器的发展前景进行了总结和展望。 展开更多
关键词 气体传感器 金属氧化物半导体 微机电系统 传感器阵列 智能传感系统
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基于45 nm CMOS SOI工艺的毫米波双频段低相噪压控振荡器设计
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作者 陈喆 王品清 +2 位作者 周培根 陈继新 洪伟 《电子学报》 EI CAS CSCD 北大核心 2024年第7期2161-2169,共9页
本文基于45 nm互补金属氧化物半导体绝缘体上硅工艺(Complementary Metal Oxide Semiconductor Silicon On Insulator,CMOS SOI)设计了一款支持5G毫米波24.25~27.5 GHz和37~43.5 GHz双频段的低相位噪声压控振荡器(Voltage Controlled Os... 本文基于45 nm互补金属氧化物半导体绝缘体上硅工艺(Complementary Metal Oxide Semiconductor Silicon On Insulator,CMOS SOI)设计了一款支持5G毫米波24.25~27.5 GHz和37~43.5 GHz双频段的低相位噪声压控振荡器(Voltage Controlled Oscillator,VCO).基于CMOS SOI工艺良好的晶体管开关特性,结合开关电容阵列及开关电感方案,提高宽带调谐电容、电感Q值,扩展VCO工作频段,降低相位噪声.同时,输出匹配网络也采用开关电容切换方式,实现了5G毫米波双频段良好阻抗匹配及稳定功率输出.流片测试结果表明该VCO可以完整覆盖5G毫米波双频段24.25~27.5 GHz和37~43.5 GHz,低频段输出功率-4.8~0 dBm,高频段输出功率-6.4~-2.3 dBm.在24.482 GHz载频,1 MHz频偏处的相位噪声为-105.1 dBc/Hz;在43.308 GHz载频,1 MHz频偏处的相位噪声为-95.3 dBc/Hz.VCO核心直流功耗15.3~18.5 mW,电路核心面积为0.198 mm^(2).低频段(高频段)的FoM(Figure of Merit)及FoMT优值分别达到-181.3 dBc/Hz(-175.4 dBc/Hz)、-194.3 dBc/Hz(-188.3 dBc/Hz). 展开更多
关键词 互补金属氧化物半导体绝缘体上硅工艺 压控振荡器 5G毫米波 双频段
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SF_(6)分解组分的气体传感器检测方法综述 被引量:1
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作者 蒋庆明 张艳妹 +3 位作者 王明祥 李洨雨 徐敏 贾鹏飞 《绝缘材料》 CAS 北大核心 2024年第3期1-14,共14页
填充六氟化硫(SF_(6))的电气设备内部存在绝缘缺陷时可能发生过热或放电,迫使SF_(6)分解产生一些特定的气体副产物。通过检测这些副产物的种类和浓度,可以判断电气设备中是否存在绝缘缺陷以及缺陷的类型和严重程度。气体传感器作为气体... 填充六氟化硫(SF_(6))的电气设备内部存在绝缘缺陷时可能发生过热或放电,迫使SF_(6)分解产生一些特定的气体副产物。通过检测这些副产物的种类和浓度,可以判断电气设备中是否存在绝缘缺陷以及缺陷的类型和严重程度。气体传感器作为气体检测的重要工具,在绝缘缺陷的气体检测法中受到了越来越多的关注。本文重点回顾了使用气体传感器检测SF_(6)分解产物的方法,介绍了SF_(6)解离过程和特征气体的生成路径,详细阐述了用于SF_(6)分解特征气体检测的传感器气敏原理和优缺点;重点讨论了利用特征气体信息诊断绝缘缺陷的算法,并展望了通过传感器检测气体分解组分方法诊断绝缘缺陷的发展方向。 展开更多
关键词 六氟化硫 气体组分分析法 绝缘缺陷 气体传感器 金属氧化物半导体
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Ka波段CMOS有源矢量合成移相器
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作者 刘帅 《微波学报》 CSCD 北大核心 2024年第3期53-56,共4页
本文基于65 nm硅基互补金属氧化物半导体工艺设计了一款Ka波段有源矢量合成移相器。该电路由正交耦合器、单端转差分信号的巴伦、可变增益放大器、信号合成网络组成。基于集总LC等效模型的正交发生器能够实现紧凑尺寸并获得高精度正交信... 本文基于65 nm硅基互补金属氧化物半导体工艺设计了一款Ka波段有源矢量合成移相器。该电路由正交耦合器、单端转差分信号的巴伦、可变增益放大器、信号合成网络组成。基于集总LC等效模型的正交发生器能够实现紧凑尺寸并获得高精度正交信号;可变增益放大器采用数字控制的共源共栅架构,能够实现精准的幅度调节,并提高输入输出之间的隔离度。实测结果表明,该移相器可在25 GHz~32 GHz频带范围内实现360°移相,相位步进5.625°,均方根(RMS)相位误差小于3°,寄生调幅RMS小于1 dB,电路面积为800μm×400μm,功耗11 mW。 展开更多
关键词 互补金属氧化物半导体 矢量合成 移相器 可变增益放大器 共源共栅
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金属氧化物半导体气体传感器选择性改进研究进展
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作者 刘亚东 徐勇 +1 位作者 尤立娟 王学峰 《传感器与微系统》 CSCD 北大核心 2024年第10期1-5,共5页
选择性较差一直是金属氧化物半导体(MOS)传感器难以攻破的主要技术瓶颈。本文基于单层结构和分层结构两种角度,对目前解决MOS传感器选择性问题的技术途径进行了综述。基于单层结构提出的技术途径,能够在一定程度上提升传感器的选择性,... 选择性较差一直是金属氧化物半导体(MOS)传感器难以攻破的主要技术瓶颈。本文基于单层结构和分层结构两种角度,对目前解决MOS传感器选择性问题的技术途径进行了综述。基于单层结构提出的技术途径,能够在一定程度上提升传感器的选择性,但在实际应用环境下的抗干扰能力等方面存在一定的未知性和局限性。基于分层结构提出的技术途径,在对气体的响应过程中产生的具有差异性的特征,可以为传感器对目标气体的准确识别提供可靠依据。但分层结构MOS传感器一致性较难控制、制备技术要求较高、使用寿命相对较短等问题仍需进一步改进和完善。 展开更多
关键词 金属氧化物半导体气体传感器 选择性 技术途径
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Semiconductor metal oxide compounds based gas sensors: A literature review 被引量:6
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作者 Sunil Jagannath PATIL Arun Vithal PATIL +5 位作者 Chandrakant Govindrao DIGHAVKAR Kashinath Shravan THAKARE Ratan Yadav BORASE Sachin Jayaram NANDRE Nishad Gopal DESHPANDE Rajendra Ramdas AHIRE 《Frontiers of Materials Science》 SCIE CSCD 2015年第1期14-37,共24页
This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (... This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (LPG), H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein. 展开更多
关键词 gas sensor semiconductor metal oxide (SMO) sensitivity air pollutant gas response
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Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors 被引量:4
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作者 马林东 李豫东 +7 位作者 郭旗 文林 周东 冯婕 刘元 曾骏哲 张翔 王田珲 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第11期264-268,共5页
Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology.... Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad(Si) ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose(TID) damage. 展开更多
关键词 complementary metal-oxide-semiconductor(CMOS) active pixel sensor dark current fixedpattern noise quantum efficiency
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Simple point contact WO_3 sensor for NO_2 sensing and relevant impedance analysis
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作者 Wu-bin Gao Yun-han Ling +1 位作者 Xu Liu Jia-lin Sun 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2012年第12期1142-1148,共7页
A simple and new point contact tungsten trioxide (WO3) sensor, which can be prepared by the oxidation of tungsten filaments via in-situ induction heating, likely detects low concentration (ppm level) environmental... A simple and new point contact tungsten trioxide (WO3) sensor, which can be prepared by the oxidation of tungsten filaments via in-situ induction heating, likely detects low concentration (ppm level) environmental pollutants such as NO2. X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) were applied to characterize the phase and the microstructure of the samples, respec-tively. It was found that the synthesized WO3 films exhibited a monoclinic phase and were composed of hierarchical microcrystals and nanocrystals. The point contact WO3 sensor (W-WO3-W) showed rectifying characteristics and an ideal sensing performance of about 110 C. A single semicircle in Nyquist plots was recorded by electrochemical impedance spectroscopy (EIS) at a relatively low temperature of 150 C but faded away above 200 C, which revealed that the sensing process was governed by a determining factor, i.e., grain boundaries at the contact site. 展开更多
关键词 gas sensors tungsten trioxide metal oxide semiconductors thin fills MICROCRYSTALS NANOCRYSTALS electrochemical impedancespectroscopy (EIS)
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Ultra-Low Power 1 Volt Small Size 2.4 GHz CMOS RF Transceiver Design for Wireless Sensor Node
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作者 Muhammad Yasir Faheem Shun'an Zhong +1 位作者 Abid Ali Minhas Muhammad Basit Azeem 《Journal of Beijing Institute of Technology》 EI CAS 2018年第4期584-591,共8页
Ultra-low power transceiver design is proposed for wireless sensor node used in the wireless sensor network(WSN).Typically,each sensor node contains a transceiver so it is required that both hardware and software de... Ultra-low power transceiver design is proposed for wireless sensor node used in the wireless sensor network(WSN).Typically,each sensor node contains a transceiver so it is required that both hardware and software designs of WSN node must take care of energy consumption during all modes of operation including active/sleep modes so that the operational life of each node can be increased in order to increase the lifetime of network.The current declared size of the wireless sensor node is of millimeter order,excluding the power source and crystal oscillator.We have proposed a new 2.4 GHz transceiver that has five blocks namely XO,PLL,PA,LNA and IF.The proposed transceiver incorporates less number of low-drop outs(LDOs)regulators.The size of the transceiver is reduced by decreasing the area of beneficiary components up to 0.41 mm;of core area in such a way that some functions are optimally distributed among other components.The proposed design is smaller in size and consumes less power,<1 mW,compared to other transceivers.The operating voltage has also been reduced to 1 V.This transceiver is most efficient and will be fruitful for the wireless networks as it has been designed by considering modern requirements. 展开更多
关键词 low-drop outs(LDOs) TRANSCEIVER metal oxide semiconductor field effect transistor(MOSFET) wireless sensor networks(WSN)
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Path Recognition Algorithm of Tracking Robots Based on Image Sensor
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作者 韩华 曹志强 +2 位作者 胡一帆 方易圆 黄镇 《Journal of Donghua University(English Edition)》 EI CAS 2014年第2期137-140,共4页
Path recognition is an inevitable core technology in the development of tracking robot. In this paper,the path tracking system of tracking robot can be realized by image sensor module based on camera to obtain lane im... Path recognition is an inevitable core technology in the development of tracking robot. In this paper,the path tracking system of tracking robot can be realized by image sensor module based on camera to obtain lane image information,and then extract the path through visual servo. The whole system can be divided into seven modules: micro control unit( MCU) processor module,image acquisition module,debugging module,motor drive module,servo drive module,speed sensor module,and voltage conversion module.In image pre-processing part,there is an introduction of binarization processing and the median filtering to strengthen the image information. About recognition algorithm,three key variables which are changed in the movement state are discussed and there are also many auxiliary algorithms that help to improve the path recognition.The experiment can verify that the whole system can accurately abstract the black guide lines from the white track and make the robot moving fast and stable by following the road parameters and conditions. 展开更多
关键词 complementary metal oxide semiconductor(CMOS) tracking robots path recognition BINARIZATION median filtering
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DESIGN AND IMPLEMENTATION OF CMOS IMAGE SENSOR
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作者 Liu Yu Wang Guoyu 《Journal of Electronics(China)》 2007年第1期95-99,共5页
A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) ... A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected. 展开更多
关键词 complementary metal oxide semiconductor (CMOS) Active Pixel sensor (APS) Fill factor Dynamic Digital Double Sample (DDDS) Fixed Pattern Noise (FPN)
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基于0.18μm CMOS工艺的300GHz高响应度探测器
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作者 徐雷钧 汪附凯 +3 位作者 白雪 张子宇 赵心可 姜高峰 《半导体技术》 CAS 北大核心 2023年第5期408-413,442,共7页
基于0.18μm CMOS工艺设计了一种300 GHz高响应度探测器。该探测器集成了双馈差分天线和双场效应管(FET)对称差分自混频电路。双馈差分天线较单馈天线有更高的精确度及更优的抗干扰性。差分自混频电路能有效地抑制共模信号,减小噪声输... 基于0.18μm CMOS工艺设计了一种300 GHz高响应度探测器。该探测器集成了双馈差分天线和双场效应管(FET)对称差分自混频电路。双馈差分天线较单馈天线有更高的精确度及更优的抗干扰性。差分自混频电路能有效地抑制共模信号,减小噪声输入。双场效应管后增加一级放大电路,将自混频电路输出的微弱信号进一步放大以增大响应度。天线与电路间的匹配网络实现了信号的最大功率传输。在全波电磁场仿真软件HFSS下对双馈天线进行建模与仿真优化,并与电路进行联合仿真。结果显示探测器在栅源电压为0.43 V、输入功率为-40 dBm时,最大响应度为11.25 kV/W,最小噪声等效功率为115pW/√Hz。 展开更多
关键词 互补金属氧化物半导体(CMOS) 高响应度 双馈差分天线 对称差分自混频电路 放大电路
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MOS气体传感器的制作及对芥子气的响应研究 被引量:2
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作者 杨姝 高适 +1 位作者 王学峰 张顺平 《传感器与微系统》 CSCD 北大核心 2023年第8期39-42,共4页
为了提高金属氧化物半导体(MOS)气体传感器测试芥子气(HD)的性能,采用水热法制备了氧化锡(SnO_(2))、三氧化二铟(In_(2)O_(3))、三氧化钨(WO_(3))及其修饰改性的金属氧化物半导体气敏材料,利用光刻剥离工艺、电流体微喷工艺以及金丝球... 为了提高金属氧化物半导体(MOS)气体传感器测试芥子气(HD)的性能,采用水热法制备了氧化锡(SnO_(2))、三氧化二铟(In_(2)O_(3))、三氧化钨(WO_(3))及其修饰改性的金属氧化物半导体气敏材料,利用光刻剥离工艺、电流体微喷工艺以及金丝球焊技术制作了16阵列气体传感器。搭建传感器测试平台,采用温度调制模式优化检测数据的采集,测试了32种材料对芥子气的响应信号,进而对材料进行有针对性的筛选,对未来实现低体积分数典型化学毒剂的快速响应、高效识别具有较大的现实意义。 展开更多
关键词 金属氧化物半导体 气体传感器 芥子气 响应
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基于MOFs路线构建的三种不同形貌的ZnO及其三乙胺响应特性
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作者 刘国强 靳焘 陈玉放 《广州化学》 CAS 2023年第5期56-61,66,I0004,共8页
采用简单的溶剂热法构筑了对苯二甲酸、2-甲基咪唑、均苯三甲酸三种配体的Zn-MOF,分别衍生制备出具有片状、正十二面体与花状形貌的ZnO材料,并将其与商品纳米ZnO进行对照。采用IR、XRD、SEM、TEM和CGS-8气敏测试平台表征及测试性能。结... 采用简单的溶剂热法构筑了对苯二甲酸、2-甲基咪唑、均苯三甲酸三种配体的Zn-MOF,分别衍生制备出具有片状、正十二面体与花状形貌的ZnO材料,并将其与商品纳米ZnO进行对照。采用IR、XRD、SEM、TEM和CGS-8气敏测试平台表征及测试性能。结果表明:制备出三种相应的Zn-MOF及ZnO;三种ZnO以及商品纳米ZnO均符合六方纤锌矿晶型结构;正十二面体形ZnO具有较大的比表面积,生长过程中暴露的高催化活性(002)晶面;四种不同形貌的ZnO对于TEA的实际气敏响应中,正十二面体形ZnO具有最优气敏传感特性,包括优异的响应灵敏度(62~100 ppm)以及响应恢复特性(t_(res)/t_(rec)=29 s/57 s)。 展开更多
关键词 金属有机框架 氧化锌 三乙胺 传感器 半导体器件
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