Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detecti...Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) ...A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.展开更多
现今,惯性传感器加双天线RTK的组合测姿方法被广泛的应用于车载测姿领域,该方法集中了惯性传感器的快速更新速率特点和双天线RTK的高精确度的优点。针对当遇到高楼或者树林阻挡时卫星信号会丢失,导致双天线RTK(real time kinematic)无...现今,惯性传感器加双天线RTK的组合测姿方法被广泛的应用于车载测姿领域,该方法集中了惯性传感器的快速更新速率特点和双天线RTK的高精确度的优点。针对当遇到高楼或者树林阻挡时卫星信号会丢失,导致双天线RTK(real time kinematic)无法提供可用的航向角,而惯性传感器又无法长时间保持航向角精度问题。本文尝试采用了一种基于微惯性测量单元(miniature inertial measurement unit,MIMU)与磁传感器与双天线RTK的信息融合方法。开展了实际跑车实验分析。得出了在卫星信号丢失的条件下本方法通过引入磁传感器提供航向信息,能够保证高精度车辆姿态数据的稳定输出。展开更多
基金supported by the Plan for Science Innovation Talent of Henan Province(No.154100510007)the Natural and Science Foundation in Henan Province(No.162300410179)the Cultivation Foundation of Henan Normal University National Project(No.2017PL04)
文摘Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
文摘A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.
