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Reconstruction of composite defects of the nose following tumor resection–a single author's experience and evaluation of the outcome
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作者 Mohammed Ahmed Rifaat 《The Chinese-German Journal of Clinical Oncology》 CAS 2013年第9期427-434,共8页
Objective:The aim of the study was to present our experience in reconstruction of complex defects of the nose.Methods:Fourteen patients presenting with large composite defects of the nose were anatomically reconstruct... Objective:The aim of the study was to present our experience in reconstruction of complex defects of the nose.Methods:Fourteen patients presenting with large composite defects of the nose were anatomically reconstructed after full tumor clearance of a skin cancer.The aesthetic outcome was assessed subjectively and objectively while the functional outcome was only assessed subjectively in 13 patients.Results:Basal cell carcinoma(BCC),represented the tumor excised in 10 patients while the remaining 4 patients suffered from squamous cell carcinoma(SCC).One patient died of extensive local recurrence of SCC after 6 months.The commonest flap used for inner lining was the septal flap while the forehead paramedian flap provided the external coverage for the majority of patients.All flaps survived completely except in one patient who developed distal paramedian forehead flap necrosis.Two patients developed multiple abscesses and sinuses discharging parts of cartilage grafts through the flaps’skin with one patient suffering from total extrusion of the costal cartilage grafts.Two other patients suffered from severe nostril stenosis.All patients had variable degree of difficulty in airway passage,while most patients were satisfied with the total nasal appearance.The objective assessment of the overall appearance of the nose scored less than the subjective satisfaction.Conclusion:Reconstruction of complex nasal defects has a high learning curve.Intranasal flaps are usually of limited size and nostril asymmetry is likely to occur.Local or regional skin flaps if available are still considered a good choice for inner as well as outer lining. 展开更多
关键词 RECONSTRUCTION complex defects NOSE OUTCOME
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3D Printing Hip Prostheses Offer Accurate Reconstruction,Stable Fixation,and Functional Recovery for Revision Total Hip Arthroplasty with Complex Acetabular Bone Defect 被引量:6
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作者 Yongqiang Hao Lei Wang +5 位作者 Wenbo Jiang Wen Wu Songtao Ai Lu Shen Shuang Zhao Kerong Dai 《Engineering》 SCIE EI 2020年第11期1285-1290,共6页
Complicated and large acetabular bone defects present the main challenges and difficulty in the revision of total hip arthroplasty(THA).This study aimed to explore the advantages of three-dimensional(3D)printing techn... Complicated and large acetabular bone defects present the main challenges and difficulty in the revision of total hip arthroplasty(THA).This study aimed to explore the advantages of three-dimensional(3D)printing technology in the reconstruction of such acetabular bone defects.We retrospectively analyzed the prognosis of four severe bone defects around the acetabulum in three patients who were treated using 3D printing technology.Reconstruction of bone defect by conventional methods was difficult in these patients.In this endeavor,we used radiographic methods,related computer software such as Materialise's interactive medical image control system and Siemens NX software,and actual surgical experience to estimate defect volume,prosthesis stability,and installation accuracy,respectively.Moreover,a Harris hip score was obtained to evaluate limb function.It was found that bone defects could be adequately reconstructed using a 3D printing prosthesis,and its stability was reliable.The Harris hip score indicated a very good functional recovery in all three patients.In conclusion,3D printing technology had a good therapeutic effect on both complex and large bone defects in the revision of THA.It was able to achieve good curative effects in patients with large bone defects. 展开更多
关键词 3D printing Hip revision complex and large acetabular bone defect Accurate reconstruction
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First-Principles Study on Native Defect Complexes in InN 被引量:1
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作者 赵风歧 史俊杰 杨茂 《Communications in Theoretical Physics》 SCIE CAS CSCD 2010年第1期145-148,共4页
We present first-principles calculations of the formation energy of different native defects and their complexes in wurtzite InN using density-functional theory and the pseudopotential plane-wave method. Our calculati... We present first-principles calculations of the formation energy of different native defects and their complexes in wurtzite InN using density-functional theory and the pseudopotential plane-wave method. Our calculations are aimed in the three cases: N/In = 1, N/In 〉 1 (N-rich), and N/In 〈 1 (In-rich). Our results indicate that the antisite defect has the lowest formation energy under N/In = 1. The formation energy of nitrogen interstitial (nitrogen vacancy) defect is significantly low under the N-rich (In-rich) condition. Thus the antisite defect is an important defect if N/In = 1, and the nitrogen interstitial (nitrogen vacancy) defect is a vital defect under the N-rich (In-rich) condition. The atomic site relaxation around the nitrogen interstitial and vacancy is investigated. Our calculations show that the nitrogen vacancy cannot be observed although it is one of the most important defects in InN. Our results are confirmed by experiments. 展开更多
关键词 density-functional theory native defect complexes formation energy
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Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si
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作者 陈贵锋 阎文博 +2 位作者 陈洪建 崔会英 李养贤 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第7期2988-2991,共4页
This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5 MeV) at 360 K.Two groups of samples with low [Oi] = 6.9 x 10^17 cm^-3 and high [O... This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5 MeV) at 360 K.Two groups of samples with low [Oi] = 6.9 x 10^17 cm^-3 and high [Oi] = 1.06 x 10^18 cm^-3 were used.We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen,it is hardly changed in the higher concentration of oxygen specimen.It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃,accompanied with the appearing of VO3. For both kinds of specimens,the concentration of VO3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃. 展开更多
关键词 electron irradiation CZ-SI defect complex annealing processes
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Clinicopathologic and prognostic relevance of ARID1A protein loss in colorectal cancer 被引量:9
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作者 Xiao-Li Wei De-Shen Wang +11 位作者 Shao-Yan Xi Wen-Jing Wu Dong-Liang Chen Zhao-Lei Zeng Rui-Yu Wang Ya-Xin Huang Ying Jin Feng Wang Miao-Zhen Qiu Hui-Yan Luo Dong-Sheng Zhang Rui-Hua Xu 《World Journal of Gastroenterology》 SCIE CAS 2014年第48期18404-18412,共9页
AIM: To explore the association between AT-rich interactive domain 1A (ARID1A) protein loss by immunohistochemistry and both clinicopathologic characteristics and prognosis in patients with colorectal cancer.
关键词 AT-rich interactive domain 1A Switching defective/sucrose non-fermenting complexes Colorectal cancer Clinicopathologic characteristics Prognosis
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Defect types and room-temperature ferromagnetism in undoped rutile TiO_2 single crystals 被引量:1
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作者 李东翔 秦秀波 +5 位作者 郑黎荣 李玉晓 曹兴忠 李卓昕 杨静 王宝义 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第3期491-494,共4页
Room-temperature ferromagnetism has been experimentally observed in annealed rutile TiO2 single crystals when a magnetic field is applied parallel to the sample plane.By combining X-ray absorption near the edge struct... Room-temperature ferromagnetism has been experimentally observed in annealed rutile TiO2 single crystals when a magnetic field is applied parallel to the sample plane.By combining X-ray absorption near the edge structure spectrum and positron annihilation lifetime spectroscopy,Ti^3+-V O defect complexes(or clusters) have been identified in annealed crystals at a high vacuum.We elucidate that the unpaired 3d electrons in Ti^3+ ions provide the observed room-temperature ferromagnetism.In addition,excess oxygen ions in the TiO2 lattice could induce a number of Ti vacancies which obviously increase magnetic moments. 展开更多
关键词 ANNEALING oxygen vacancies Ti^3+-V O defect complexes FERROMAGNETISM
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Double-paddled pectoralis major myocutaneous flap as an alternative to microvascularized free flaps in complex orocervical defects
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作者 Manuel Moreno-Sánchez Raúl González-García Carlos Moreno-García 《Plastic and Aesthetic Research》 2017年第5期82-85,共4页
The authors present the double-paddled pectoralis major myocutaneous flap as a successful alternative for the reconstruction of complex orocervical defects following failure of prior microvascularized free flaps or fr... The authors present the double-paddled pectoralis major myocutaneous flap as a successful alternative for the reconstruction of complex orocervical defects following failure of prior microvascularized free flaps or free flap harvest is not feasible. This method was used for the reconstruction of post-ablative defect in a 36-year-old male with a T4 squamous cell carcinoma of the base of tongue with laryngeal involvement. The distal paddle was adapted to reconstruct a defect of the floor of the mouth and further sutured in two layers (muscle-basal mandible and skin paddle-oral mucosa) while the proximal skin paddle was used to close the cervical skin and the peri-tracheostomy defect. 展开更多
关键词 Double-paddled pectoralis flap orocervical complex defect microvascularized free flap failure
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Local charge neutrality condition,Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects 被引量:1
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作者 Ken K.Chin 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第11期1-8,共8页
For semiconductors with localized intrinsic/impurity defects, intentionally doped or unintentionally incorporated, that have multiple transition energy levels among charge states, the general formulation of the local ... For semiconductors with localized intrinsic/impurity defects, intentionally doped or unintentionally incorporated, that have multiple transition energy levels among charge states, the general formulation of the local charge neutrality condition is given for the determination of the Fermi level and the majority carrier density. A graphical method is used to illustrate the solution of the problem. Relations among the transition energy levels of the multi-level defect are derived using the graphical method. Numerical examples are given for p-doping of the CdTe thin film used in solar panels and semi-insulating Si to illustrate the relevance and importance of the issues discussed in this work. 展开更多
关键词 multi-level defects defect complex INTRINSIC IMPURITY SEMICONDUCTOR Fermi level majority carrier density
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GaZn-VZn acceptor complex defect in Ga-doped ZnO
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作者 AiHua Tang ZengXia Mei +5 位作者 YaoNan Hou LiShu Liu Vishnukanthan Venkatachalapathy Alexander Azarov Andrej Kuznetsov XiaoLong Du 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2018年第7期67-72,共6页
Gallium (Ga)-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant... Gallium (Ga)-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped ZnO isotopic heterostructures. The (GaZn-VZ.)- complex defect, instead of the isolated VZn^2-, is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a -0.78 eV binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements (-(0.82±0.02) eV). These findings contribute to an essential understanding of the (GaZn-VZn)- complex defect and the potential engineering routes of heavily Ga-doped ZnO. 展开更多
关键词 Ga-doped ZnO complex defect SELF-DIFFUSION
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On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data
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作者 E.L.Pankratov 《Journal of Semiconductors》 EI CAS CSCD 2018年第5期6-15,共10页
We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes(divacancies and diinterstitials) in a multilayer structure. The ... We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes(divacancies and diinterstitials) in a multilayer structure. The model gives a possibility to describe qualitatively nonmonotonicity of distributions of concentrations of radiation defects on interfaces between layers of the multilayer structure. The nonmonotonicity was recently found experimentally.To take into account the nonmonotonicity we modify recently used in literature model for analysis of distribution of concentration of radiation defects. To analyze the model we used an approach of solution of boundary problems,which could be used without crosslinking of solutions on interfaces between layers of the considered multilayer structures. 展开更多
关键词 radiation defects nonmonotonicity of distributions of concentrations complex
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