New Activated Carbon with High Thermal Conductivity and Its Microwave Regeneration Performance

Using a walnut shellas a carbon source and ZnCl_2 as an activating agent,we resolved the temperature gradient problems of activated carbon in the microwave desorption process.An appropriate amount of silicon carbide was added to prepare the composite activated carbon with high thermalconductivity while developing VOC adsorption-microwave regeneration technology.The experimentalresults show that the coefficient of thermalconductivity of SiC-AC is three times as much as those of AC and SY-6.When microwave power was 480 W in its microwave desorption,the temperature of the bed thermaldesorption was 10 ℃ to 30 ℃ below that of normalactivated carbon prepared in our laboratory.The toluene desorption activation energy was 16.05 k J·mol^（-1）,which was 15% less than the desorption activation energy of commercialactivated carbon.This study testified that the process could maintain its high adsorption and regeneration desorption performances.

Effect of Chemical Doping and Ion Implantation on Cond uctivity of Poly(p-phenylene vinylene) Derivatives

The surface conductivity of poly [ 2-methoxy-5-（3＇-methyl） butoxy]-p-phenylene vinylene （PMOMBOPV） films doped with FeCl3 and H2SO4 by chemical method and implanted by N^＋ ions was studied and the comparison of environmental stability of conductive behavior was also investigated. The energy and dose of N^＋ ions were in the rang 15～35 keV and 3. 8×10^15～9. 6×10^16 ions/cm^2, respectively. The conductivity of PMOMBOPV film was enhanced remarkably with the increases of the energy and dose of N^＋ ions. For example, the conductivity of PMOMBOPV film was 3. 2×10^-2S/cm when ion implantation was performed with an energy of 35 keV at a dose of 9. 6 × 10^14 ions/cm^2 , which was almost seven orders of magnitude higher than that of film unimplanted. The environmental stability of conductive behavior for ionimplanted film was much better than that of chemical doped films. Moreover, the conductive activation energy of ion-implanted films was measured to be about 0.17 eV.

Impedance Characteristics of MgO-ZrO_2 Ceramics Doped with CeO_2

The ultrafine CexMg0.06Zr1-xO1.94 （ x = 0 16% ） powders were synthesized by a chemical co-precipitated method. The pressed compacts were sintered in air at 1300, 1400, 1500, 1600℃ for 3 h, respectively. The phase of the ceramics was characterized by the X-ray diffraction （XRD） method. The conductivity of the ceramics was measured by the AC complex impedance technique at 700- 1200 ℃. The ratio of the cubic phase in the ceramics improves with increasing CeO2 content, leading to a enlargement of the oxygen ionic migration channel. The contact resistance between conductive phase particles decreases with increasing CeO2 content, leading to a lower migration hindrance of the oxygen ionic. Consequently, the ionic conductivity of the ceramics improves with increas- ing CeO2 content. Additionally, an analysis for this phenomenon was also presented.

Investigation of electrophysical, photo- and gas-sensitive properties of ZnO–SnO_(2) sol–gel fflms

Thin nanocomposite fflms based on tin dioxide with a low content of zinc oxide(0.5–5 mol.%)were obtained by the sol–gel method.The synthesized fflms are 300–600 nm thick and contains pore sizes of 19–29 nm.The resulting ZnO–SnO_(2) fflms were comprehensively studied by atomic force and Kelvin probe force microscopy,X-ray diffraction,scanning electron microscopy,and high-resolution X-ray photoelectron spectroscopy spectra.The photoconductivity parameters on exposure to light with a wavelength of 470 nm were also studied.The study of the photosensitivity kinetics of ZnO–SnO_(2) fflms showed that the fflm with the Zn:Sn ratio equal to 0.5:99.5 has the minimum value of the charge carrier generation time constant.Measurements of the activation energy of the conductivity,potential barrier,and surface potential of ZnO–SnO_(2) fflms showed that these parameters have maxima at ZnO concentrations of 0.5 mol.%and 1 mol.%.Films with 1 mol.%ZnO exhibit high response values when exposed to 5–50 ppm of nitrogen dioxide at operating temperatures of 200℃ and 250℃.

Cu doped AlSb polycrystalline thin films

Cu-doped AlSb polycrystalline films were grown on quartz glass by magnetron co-sputtering.The structural,morphological and electrical properties of the films were studied.The incorporation of copper atoms can result in the increase of lattice constants,and annealing is helpful to eliminate this deformation.Cu-doped AlSb films exhibit weak n-type conductivity.The results show that the doping effect has a close relationship with the annealing process,meaning that the position of Cu atom in AlSb polycrystalline films might influence the doping effect.