Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.

Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films

Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In2O3：Sn （ITO） thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%.

Precision Control of Amphoteric Doping in Cu_(x)Bi_(2)Se_(3) Nanoplates

Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copper dopants in Cu_(x)Bi_(2)Se_(3) display complex electronic behaviors and may function as either electron donors or acceptors depending on their concentration and atomic sites within the Bi_(2)Se_(3) crystal lattice.Thus,a precise understanding and control of the doping concentration and sites is of both fundamental and practical significance.Herein,we report a solution-based one-pot synthesis of Cu_(x)Bi_(2)Se_(3) nanoplates with systematically tunable Cu doping concentrations and doping sites.Our studies reveal a gradual evolution from intercalative sites to substitutional sites with increasing Cu concentrations.The Cu atoms at intercalative sites function as electron donors while those at the substitutional sites function as electron acceptors,producing distinct effects on the electronic properties of the resulting materials.We further show that Cu_(0.18)Bi_(2)Se_(3) exhibits superconducting behavior,which is not present in Bi_(2)Se_(3),highlighting the essential role of Cu doping in tailoring exotic quantum properties.This study establishes an efficient methodology for precise synthesis of Cu_(x)Bi_(2)Se_(3) with tailored doping concentrations,doping sites,and electronic properties.