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Improvement of silicon etching resolution using the confined etchant layer technique
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作者 Zu, YB Xie, L +3 位作者 Tian, ZW Xie, ZX Mu, JQ Mao, BW 《Chinese Science Bulletin》 SCIE EI CAS 1997年第15期1318-1319,共2页
WHEN scanning electrochemical microscopy (SECM) with feedback mode is used to etchcertain surface, the etchant molecules generated at a microelectrode diffuse to the surface andreact therein with the surface species, ... WHEN scanning electrochemical microscopy (SECM) with feedback mode is used to etchcertain surface, the etchant molecules generated at a microelectrode diffuse to the surface andreact therein with the surface species, resulting in local etching pattern. It is noted that theetching resolution of SECM is dominantly determined by the size of the microelectrode.However, many experimental results have shown the significant influence of the lateral diffu-sion of etchant on the etching resolution. Therefore, a thin diffusion layer of the 展开更多
关键词 AS SECM Improvement of silicon etching resolution using the confined etchant layer technique CELT
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