Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value...Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.展开更多
Aiming at piezoresistive pressure sensors, this paper studies simulation of standard pressure by using benchmark current source and self-calibration of the sampling data characteristics. A data fusion algorithm for sa...Aiming at piezoresistive pressure sensors, this paper studies simulation of standard pressure by using benchmark current source and self-calibration of the sampling data characteristics. A data fusion algorithm for sample set is presented which transforms a surface problem into a curve fitting and interpolation problem. The simulation result shows that benchmark current source simulating pressure is successful and data fusion algorithm is effective. The maximum measurement error is only 0.098 kPa and maximum relative error is 0.92% at 0-45 kPa and -10-45~C.展开更多
文摘Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.
基金Project supported by the National Natural Science Foundation of China （Grant No.40265001）, and the Science Foundation of Yunnan Province （Grant No.2002C0038M）
文摘Aiming at piezoresistive pressure sensors, this paper studies simulation of standard pressure by using benchmark current source and self-calibration of the sampling data characteristics. A data fusion algorithm for sample set is presented which transforms a surface problem into a curve fitting and interpolation problem. The simulation result shows that benchmark current source simulating pressure is successful and data fusion algorithm is effective. The maximum measurement error is only 0.098 kPa and maximum relative error is 0.92% at 0-45 kPa and -10-45~C.
