Design of Linear Functional Noncircular Gear with High Contact Ratio Used in Continuously Variable Transmission

Continuously variable transmission(CVT)of noncircular gear has the technical advantages of large bearing capacity and high transmission efficiency.The key technology of CVT with noncircular gear has been broken through some countries,and is in the stage of deep application research.Although the characteristics and design methods of noncircular gear pairs have been continuously studied in China,the noncircular gear CVT is still in the preliminary exploration and research stage.The linear functional noncircular gear pair,whose transmission ratio is a linear function in the working section,to realize continuously variable transmission was the research object in this paper.According to the required transmission ratio in the working section,the transmission ratio function in the non-working section was constructed by using a polynomial.And then the influence of pitch curve parameters in the working section on which in the non-working section was also analyzed to obtain the pitch curve suitable for transmission of this gear pair.In addition,for improving the stability and bearing capacity of gear transmission,the noncircular gear pair transmission with high contact ratio was designed.Furthermore,the accurate value of the contact tooth length was calculated based on the gear principle and the characteristics of the involute tooth profile,from this the contact tooth length error was calculated by comparing the accurate value with its actual value obtained by the rolling experiment.Finally,an indirect method to verify the contact ratio by detecting the contact length error of the tooth profile was proposed.

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights（BH） of as-deposited and 200 ℃ annealed SBDs are 0.80 eV（I-V）/0.93 eV（C-V） and 0.87 eV（I-V）/1.03 eV（C-V）. However, the BH rises to 0.99 eV（I-V）/1.18 eV（C-V）and then slightly deceases to 0.92 eV（I-V）/1.03 eV（C-V） after annealing at 300 ℃ and 400 ℃. The utmost BH is attained after annealing at 300 ℃ and thus the optimum annealing for SBD is 300 ℃. By applying Cheung＇s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung＇s and ΨS-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the NSS decreases up to 300 ℃ annealing and then slightly increases after annealing at 400 ℃. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.