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Fault-tolerance wide voltage conversion gain DC/DC converter for more electric aircraft
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作者 Binxin ZHU Jiaxin LIU +1 位作者 Yu LIU Kaihong WANG 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2023年第7期420-429,共10页
In this paper,a fault-tolerance wide voltage conversion gain DC/DC converter for More Electric Aircraft(MEA)is proposed.The proposed converter consists of a basic Cuk converter module and n expandable units.By adjusti... In this paper,a fault-tolerance wide voltage conversion gain DC/DC converter for More Electric Aircraft(MEA)is proposed.The proposed converter consists of a basic Cuk converter module and n expandable units.By adjusting the operation state of the expandable units,the voltage conversion gain of the proposed converter could be regulated,which makes it available for wide voltage conversion applications.Especially,since mutual redundancy can be realized between the basic Cuk converter module and the expandable units,the converter can continuously work when an unpredictable fault occurs to the fault-tolerant parts of the proposed converter,which reflects the fault tolerance of the converter and significantly improves the reliability of the system.Moreover,the advantages of small input current ripple,automatic current sharing and low voltage stress are also integrated in this converter.The working principle and features of the proposed converter are mainly introduced,and an experimental prototype with 800 W output power has been manufactured to verify the practicability and availability of the proposed converter. 展开更多
关键词 Cuk converter Fault tolerance High reliability More Electric Aircraft(MEA) Wide voltage conversion gain
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Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer 被引量:1
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作者 Hassan Kaatuzian Hadi Dehghan Nayeri +1 位作者 Masoud Ataei Ashkan Zandi 《Journal of Semiconductors》 EI CAS CSCD 2013年第9期35-40,共6页
We analyze an integrated electrically pumped opto-electronic mixer, which consists of two InP/GalnAs hetero junction bipolar transistors (HBT), in a cascode configuration. A new HBT with modified physical structure ... We analyze an integrated electrically pumped opto-electronic mixer, which consists of two InP/GalnAs hetero junction bipolar transistors (HBT), in a cascode configuration. A new HBT with modified physical structure is proposed and simulated to improve the frequency characteristics of a cascode mixer. For the verification and calibrating software simulator, we compare the simulation results of a typical HBT, before modifying it and com paring it with empirical reported experiments. Then we examine the simulator on our modified proposed HBT to prove its wider frequency characteristics with better flatness and acceptable down conversion gain. Although the idea is examined in several GHz modulation, it may easily be extended to state of the art HBT cascode mixers in much higher frequency range. 展开更多
关键词 CASCODE down conversion gain MIXER opto-electronic photo HBT simulation
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A high linearity dual-band mixer for IMT-A and UWB systems
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作者 唐旭升 王晓羽 +2 位作者 杨江 唐欣 黄风义 《Journal of Semiconductors》 EI CAS CSCD 2014年第11期130-134,共5页
The design and analysis of a reconfigurable dual-band down-conversion mixer for IMT-advanced (3.4 3.6 GHz) and UWB (4.2-4.8 GHz) applications are presented. Based on a folded double-balanced Gilbert cell, which is... The design and analysis of a reconfigurable dual-band down-conversion mixer for IMT-advanced (3.4 3.6 GHz) and UWB (4.2-4.8 GHz) applications are presented. Based on a folded double-balanced Gilbert cell, which is well known for its low voltage, simplicity and well balanced performance, the mixer adopts a capacitive cross-coupling technique for input matching and performance improvement. Switched capacitors and resistors are added to shift the working bands. Fabricated in a TSMC 0.13 #m process, the test results show flat conversion gains from 9.6 to 10.3 dB on the IMT-A band and from 9.7 to 10.4 dB on the UWB band, with a noise figure of about 15 dB on both bands. The input third-order intercept points (lIP3) are about 7,3 dBm on both of the frequency bands. The whole chip consumes 11 mW under 1.2 V supply and the total area of the layout is 0.76 × 0.65 mm^2. 展开更多
关键词 MIXER IMT advanced UW13 IIP3 conversion gain noise figure
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