Template synthesis of copper azide primary explosive through Cu2O@HKUST-1 core-shell composite prepared by “bottle around ship” method

Copper azide(CA), as a primary explosive with high energy density, has not been practically used so far because of its high electrostatic sensitivity. The Cu2O@HKUST-1 core-shell structure hybrid material was synthesized by the “bottle around ship” methodology in this research by regulating the dissolution rate of Cu2O and the generation rate of metal-organic framework(MOF) materials. Cu2O@HKUST-1 was carbonized to form a Cu O@porous carbon(CuO@PC) composite material. CuO@PC was synthesized into a copper azide(CA) @PC composite energetic material through a gas-solid phase in-situ azidation reaction.CA is encapsulated in PC framework, which acts as a nanoscale Faraday cage, and its excellent electrical conductivity prevents electrostatic charges from accumulating on the energetic material’s surface. The CA@PC composite energetic material has a CA content of 89.6%, and its electrostatic safety is nearly 30times that of pure CA(1.47 mJ compared to 0.05 mJ). CA@PC delivers an outstanding balance of safety and energy density compared to similar materials.

Thermal conductivity of diamond/copper composites with a bimodal distribution of diamond particle sizes prepared by pressure infiltration method

The thermal conductivity of diamond/copper composites with bimodal particle sizes was studied. The composites were prepared through pressure infiltration of liquid copper into diamond preforms with a mixture of 40 and 100 pm-size diamonds. The permeability of the preforms with different coarse-to-fine volume ratios of diamonds was investigated. The thermal conductivity of the diamond/copper composites with bimodal size distribution was compared to the theoretical value derived from an analytical model developed by Chu. It is predicted that the diamond/copper composites could reach a higher thermal conductivity and their surface roughness could be improved by applying bimodal diamond particle sizes.

Preparation and thermal conductivity of tungsten coated diamond/copper composites

Tungsten was plated on the surface of diamond by using thermal diffusion method.Different process parameters were employed to prepare the composites with tungsten,diamond and copper.The micro morphology of different samples was observed,and the thermal conductivity of samples was measured by laser flash method.The optimal process parameters for preparing diamond/copper composites with high thermal conductivity were investigated.The results indicated that plating tungsten on diamond could modify the interface bonding.When the diamond was plated for 60 min,the coating appeared intact,uniform and flat,and the thermal conductivity of the sample could reach as high as 486 W/(m·K).The integrity and uniformity were more important than thickness for the coating.When the tungsten-plated diamond was further annealed,the metallurgical bonding between the coating and the diamond was enhanced,and the thermal conductivity rose to 559 W/(m·K).

Interfacial microstructure and properties of diamond/Cu-xCr composites for electronic packaging applications

Diamond/Cu-xCr composites were fabricated by pressure infiltration process.The thermal conductivities of diamond/Cu-xCr（x = 0.1,0.5,0.8） composites were above 650 W/mK,higher than that of diamond/Cu composites.The tensile strengths ranged from 186 to 225 MPa,and the bonding strengths ranged from 400 to 525 MPa.Influences of Cr element on the thermo-physical properties and interface structures were analyzed.The intermediate layer was confirmed as Cr3C2 and the amount of Cr3C2 increased with the increase of Cr concentration in Cu-xCr alloys.When the Cr concentration was up to 0.5 wt.%,the content of the Cr3C2 layer was constant.As the thickness of the Cr3C2 layer became larger,the composites showed a lower thermal conductivity but higher mechanical properties.The coefficients of thermal expansion（CTE） of diamond/Cu-xCr（x = 0.1,0.5,0.8） composites were in good agreement with the predictions of the Kerner＇ model.

Selective interfacial bonding and thermal conductivity of diamond/Cu-alloy composites prepared by HPHT technique

Cu-based and Cu-alloy-based diamond composites were made by high-pressure-high-temperature （HPHT） sintering with the aim of maximizing the thermal conductivity of the composites. Improvements in interfacial bonding strength and thermo-physical properties of the composites were achieved using an atomized copper alloy with minor additions of Co, Cr, 13, and Ti. The thermal conductivity （TC） oh- mined exhibited as high as 688 W.m-1.K-1, but also as low as 325 W.m-1.K-l. A large variation in TC can be rationalized by the discrepancy of diamond-matrix interfacial bonding. It was found from fractography that preferential bonding between diamond and the Cu-alloy matrix occurred only on the diamond {100} faces. EDS analysis and Raman spectra suggested that selective interfacial bonding may be attributed to amorphous carbon increasing the wettability between diamond and the Cu-alloy matrix. Amorphous carbon was found to significantly affect the TC of the composite by interface modification.

Effect of sintering parameters on the microstructure and thermal conductivity of diamond/Cu composites prepared by high pressure and high temperature infiltration

Pure Cu composites reinforced with diamond particles were fabricated by a high pressure and high temperature （HPHT） infiltration technique. Their microstructural evolution and thermal conductivity were presented as a function of sintering parameters （temperature, pressure, and time）. The improvement in interfacial bonding strength and the maximum thermM conductivity of 750 W/（m.K） were achieved at the optimal sintering parameters of 1200℃, 6 GPa and 10 min. It is found that the thermal conductivity of the composites depends strongly on sintering pressure. When the sintering pressure is above 6 GPa, the diamond skeleton is detected, which greatly contributes to the excellent thermal conductivity.

Pressure infiltrated Cu/diamond composites for LED applications

Diamond reinforced copper （Cu/diamond） composites were prepared by a pressure infilla＇ation technique. The composites show a super high conductivity of 713 W.m-1.K-1 in combination with an extremely low coefficient of thermal expansion （CTE） of 7.72 × 10-6 K-1 （25-100℃）, which are achieved by modifying the copper matrix with adding 0.3 wt.% of boron to get a good thermal contact between the matrix and the diamond particles. By adopting a series of postmachining techniques the composites were made into near-net-shape parts, and an electroless silver coating was also successfully plated on the composites. Finally, their potential applications in the thermal management of fight emitting diodes （LED） were illustrated via prototype examples.

MECHANICAL PROPERTIES OF HOT PRESSED ZINC SULPHIDEDIAMOND COMPOSITES

ZnS-Diatnond cotnPOsites (ZnS/D) were fabricated by hot pressing to obtain a ZnS ithered transparent materials with incmeed toughness. The relations of the mechanical properties and the diomond contents were investigated. It was determined that,when the content of diamond is in the mnge hem 1% to 10%, the toughness of the composite fits the equation KIC = cexp(a+bx). The constants c, a, and b determined experimentally are 10-6, d.47 and 9.70 respectively.

Electrochemical behavior of different shelled microcapsule composite copper coatings

Copper/liquid microcapsule composite coatings with polyvinyl alcohol （PVA）, gelatin or methyl cellulose （MC） as shell materials were prepared by electrodeposition. The influence of shell materials on the corrosion resistance of the composite coatings in 0.1 M H2SO4 was investigated by means of electrochemical techniques, scanning electron microscopy （SEM）, and energy dispersion spectrometry （EDS）. The results show that the participation of microcapsules can enhance the corrosion resistance of the composite coatings compared with the traditional copper layer. Based on the analysis of electrochemical test results, the release ways of microcapsules were deduced. Gelatin and MC as the shell materials of microcapsules are easy to release quickly in the composite coating. On the contrary, the releasing speed of PVA microcapsules is relatively slow due to their characteristics.

Effect of sintering on the relative density of Cr-coated diamond/Cu composites prepared by spark plasma sintering

Cr-coated diamond/Cu composites were prepared by spark plasma sintering. The effects of sintering pressure, sintering temperature, sintering duration, and Cu powder particle size on the relative density and thermal conductivity of the composites were investigated in this paper. The influence of these parameters on the properties and microstructures of the composites was also discussed. The results show that the relative density of Cr-coated diamond/Cu reaches ~100% when the composite is gradually compressed to 30 MPa during the heating process. The densification temperature increases from 880 to 915℃ when the diamond content is increased from 45vol% to 60vol%. The densification temperature does not increase further when the content reaches 65vol%. Cu powder particles in larger size are beneficial for increasing the relative density of the composite.

Effect of Boron Addition on the Thermal Properties of Diamond-Particle-Dispersed Cu-Matrix Composites Fabricated by SPS

Diamond particle dispersed copper (Cu) matrix composites were fabricated from the powder mixture composed of diamond, pure-Cu and boron (B) by spark plasma sintering (SPS). The composites were consolidated at 1173 K for 600 s by SPS. The reaction between the diamond particle and the Cu matrix in the composite was not confirmed by SEM observation and X-ray diffraction (XRD) analysis. The relative packing density of the Cu/diamond composites increased with B addition and attained 93.2% - 95.8% at the B content range between 1.8 vol.% and 13.8 vol.%. The thermal conductivity of the diamond-dispersed Cu composite drastically increased with B addition and reached the maximum value of 689 W/mK at 7.2 vol% B. Numerous transgranular fractures of diamond particles were observed on bending fracture surfaces of Cu-B/diamond composites. This indicates strong bonding between the diamond particle and the Cu matrix in the composite. The coefficient of thermal expansion of the composite falls in the upper line of Kerner’s model.

Effects of submicron diamonds on the growth of copper in Cu-diamond co-deposition

Submicron diamonds were co-deposited on aluminum substrates with copper from the acid copper sulfate electrolyte by electro- lyte-suspension co-deposition. After submicron diamonds were added to the electrolyte, the shape of copper grains transformed from oval or round to polyhedron, the growth mode of copper grains transformed from columnar growth to gradual change in size, and the preferred ori- entation of copper grains transformed from （220） to （200）. Analyzing the variation of cathodic overpotential, it was found that the cathodic overpotential tended to remain tmchanged when copper plane （220） grew in the process of electrodepositing pure copper, while it tended to decrease with time when copper plane （200） grew in the process of co-deposition. It was inferred that copper plane （200） was propitious to the deposition of submicron diamonds.

Microstructural characterization of Cu/Al composites and effect of cooling rate at the Cu/Al interfacial region

Cu/Al composites are of vital importance in industrial applications because of their numerous advantages. The influence of bond-ing temperature and cooling rate on the microstructure and morphology of Cu/Al composites was investigated in this paper. The interfacial morphology and constituent phases at the Cu/Al interface were analyzed by optical microscopy and field-emission scanning electron mi-croscopy equipped with energy-dispersive X-ray spectroscopy. The results indicate that effective Cu-Al bonding requires a higher bonding temperature to facilitate interdiffusion between the two metals. The microstructural characteristics are associated with various bonding tem-peratures, which impact the driving force of interdiffusion. It is observed that cooling rate exerts a significant influence on the morphology and amount of the intermetallic compounds at the interfacial region. Meanwhile, microhardness measurements show that hardness varies with the bonding temperature and rate of cooling.

Fabrication and Microstructure of W/Cu Functionally Graded Material

W/Cu functionally gradient material (FGM) has excellent mechanical properties since it can effectively relax interlayer thermal stresses caused by the mismatch between their thermal expansion coefficients. W/Cu FGM combines the advantages of tungsten such as high melting point and service strength, with heat conductivity and plasticity of copper at room temperature. Thus it demonstrates satisfactory heat corrosion and thermal shock resistance and will be a promising candidate as divertor component in thermonuclear device. Owing to the dramatic difference of melting point between tungsten and copper, conventional processes meet great difficulties in fabricating this kind of FGMs. A new approach termed graded sintering under ultra-high pressure (GSUHP) is proposed, with which a near 96% relative density of W/Cu FGM that contains a full distribution spectrum (0-100%W) has been successfully fabricated. Suitable amount of transition metals (such as nickel, zirconium, vanadium) is employed as additives to activate tungsten's sintering, enhance phase wettability and bonding strength between W and Cu. Densification effects of different layer of FGM were investigated. Microstructure morphology and interface elements distribution were observed and analyzed. The thermal shock performance of W/Cu FGM was also preliminarily tested.

Researches for higher electrical conductivity copper-based materials

Copper and copper-based materials are widely used in power electronics,auto-mobiles,mechanical manufacturing and high-tech manufacturing fields such as aerospace,telecommunications and integrated circuits owing to their compre-hensive advantages in mechanical,electrical conductivity and processing prop-erties.With the rapid development of technology,many emerging technical fields have introduced more challenging requirements for the electrical conductivity of copper.This article reviews the research status of high-conductivity copper-based materials and introduces three methods to improve electrical conductivity,including purification,alloying and addition of nanocarbon materials.We sum-marise the advantages,disadvantages and future development trends of methods for improving copper conductivity.The key to producing high-conductivity copper-based materials is development of low-cost,continuous and stable processes.

Lead isotopic composition and lead source of the Tongchanghe basalt-type native copper-chalcocite deposit in Ninglang , western Yunnan , China

The Tongchanghe native copper-chalcocite deposit at Ninglang occurs in low-Ti basalts of western Yunnan, and the mode of fault-filling & metasomatism metallogenesis indicates that this deposit is of late-stage hydrothermal origin. This makes it more complicated to define the source of ore-forming materials. This paper introduces the Pb isotope data of Himalayan alkali-rich porphyries, regional Early-Middle Proterozoic metamorphic rock basement and various types of rocks of the mining district in western Yunnan with an attempt to constrain the origin of the Tongchanghe native copper-chalcocite deposit at Ninglang. The results showed that the ores are relatively homogeneous in Pb isotopic composition, implying a simple ore-forming material source. The three sets of Pb isotopic ratios in the Himalayan alkali-rich porphyries are all higher than those of the ores; the regional basement metamorphic rocks show a wide range of variations in Pb isotopic ratio, quite different from the isotopic composition of ore lead; the Pb isotopic composition of the Triassic sedimentary rocks and mudstone and siltstone interbeds in the Late Permian Heinishao Formation (corresponding to the forth cycle of basaltic eruption) in the mining district has the characteristics of radiogenic lead and is significantly different from the isotopic composition of ore lead; like the ores, the Emeishan basalts in the mining district and those regionally distributed possess the same Pb isotopic composition, showing a complete overlap with respect to their distribution range. From the above, the possibilities can be ruled out that the ore-forming materials of the Tongchanghe deposit were derived from the basement, a variety of Himalayan magmatic activities, etc. It is thereby defined that the ore-forming materials were derived largely from the Emeishan basalts. From the data available it is deduced that the native cupper-chalcocite-type metallogenesis that occurred in the Emeishan basalt-distributed area has the same metal source as the Tongchanghe deposit.

Fabrication and characterization of copper-diamond particles

The electroless copper deposition on both pure and Cr-coated diamond particles was stud- ied to produce copper/diamond composites for electronic packaging materials. The particles were characterized and the mechanism of product formation was investigated through scanning electron microscopy （SEM）, energy dispersive spectroscopy （EDS）, X-ray diffraction （XRD）, and X-ray photoelectron spectra （XPS）. The particle coating thickness was measured using optical micro- graphs. The diamond particles got uniform coating thickness of copper crystals layers. This method provided an excellent base for the fabrication of metal-based composites using cheap equipments, and was less time consuming, nature friendly and economical compared with other methods of dia- mond surface metallization.

增强体表面改性在高导热金属基复合材料中的应用

随着电子技术的高速发展和电子器件的更新换代,电子封装材料的性能需求越来越高。金属基复合材料,尤其是铝基和铜基复合材料具有高导热、低膨胀、高稳定性等特点,是具有广阔应用前景的电子封装材料。然而,金刚石、石墨烯、硅等增强体与基体的润湿性差,或者在高温下与基体发生有害的界面反应,限制了此类高导热金属基复合材料的开发和应用。本文简述了金属基复合材料的界面研究进展,结合影响金属基复合材料界面结合的因素,提出了几种改善界面结合的方法。增强体表面改性是改善金属基复合材料界面的重要途径之一,常用工艺有磁控溅射法、化学气相沉积法、溶胶凝胶法、化学镀法等;最后,对增强体表面改性在高热导金属基复合材料中的应用进行分析和展望。

铜复合金属材料抗菌特性试验研究

文章将大肠埃希氏菌作为试验菌种,采用平板计数法评价铜及铜复合金属材料的抗菌性能。试验中,将适宜稀释度的菌悬液分别滴加在空白样本(聚乙烯片)和实验样本(白铜片、磷铜片和铍青铜片)上接触培养一段时间,洗脱后将洗脱液涂布于平板上进行培养,并进行菌落计数,以研究铜合金材料的抗菌特性,探索铜合金抗菌材料在诸多领域的深入应用。结果表明,接触白铜、磷铜、铍青铜3种材料24 h,稀释10~5倍的菌液培养24 h后基本无菌落生长。试验结果显示,铜合金材料的平均抗菌率R≥99%,且材料中起主要抗菌作用的成分是铜。铜合金材料的抗菌率与纯铜材料的抗菌率相近,且结果均符合Ⅰ级抗细菌率标准,所以判断这三类铜合金材料均具有强抗菌效果。