The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surfac...The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surface roughness scattering,and remote Coulomb scatterings are considered,and the results are verified by the experimental results at different temperatures for both bulk(from 300 K to 30 K)and UTB SOI(300 K and 25 K)p-MOSFETs.The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature(4.2 K).The results reveal that as the temperature decreases,the RCS due to the interfacial trap charges plays an important role in the hole mobility.展开更多
For the ground state of the homogeneous electron gas (jellium), it is shown how the cumulant decomposition of the 2-matrix leads to the cumulant decomposition of the structure factors Sa,p(q) for the antiparallel (a) ...For the ground state of the homogeneous electron gas (jellium), it is shown how the cumulant decomposition of the 2-matrix leads to the cumulant decomposition of the structure factors Sa,p(q) for the antiparallel (a) and parallel (p) spin pairs and how it simultaneously allows one to derive the momentum distribution n(k), which is a one-body quantity [Phys. Rev. A 86, 012508 (2012)]. The small-q and large-q behavior of Sa,p(q), and their normalizations are derived and compared with the results of P. Gori-Giorgi et al. [Physica A 280, 199 (2000) and Phys. Rev. B 61, 7353 (2000)].展开更多
sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0....sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0.5）Ge_（0.5）QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.展开更多
Electrons are believed to avoid one another in space(correlation) due to the Coulomb repulsion and/or the Pauli exclusion principle.It is shown, using examples of two-electron systems, that indeed the mean electron-el...Electrons are believed to avoid one another in space(correlation) due to the Coulomb repulsion and/or the Pauli exclusion principle.It is shown, using examples of two-electron systems, that indeed the mean electron-electron distance increases in case of the ground electronic state as compared to the independent electron model. It is demonstrated however that there exist excited states, often of low energy, in which the electrons, while having a lot of free physical space(with nuclei being absent), choose to be close to each other in their motion("anticorrelation"), as if they mutually attracted one another. The source of this effect, quantummechanical in nature, is the orthogonality of the eigenfunctions, that forces the electronic wave functions to differ widely, even at the price of short electron-electron distances. There are also excited states with a mixed behaviour, with complex and often intriguing correlation-anticorrelation patterns.展开更多
Ⅰ.INTRODUCTIONWhen calculating the interaction energy between two hydrogen molecules with certain relative orientation, if we only wish to determine the position of the equilibrium point and the depth of the potentia...Ⅰ.INTRODUCTIONWhen calculating the interaction energy between two hydrogen molecules with certain relative orientation, if we only wish to determine the position of the equilibrium point and the depth of the potential well, those with higher accuracy among the ab initio methods could be chosen, by which only several points near certain estimated position need to be calcu-展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61674008,61421005,and 61804003)the National Key Research and Development Program of China(Grant No.2016YFA0202101)the China Postdoctoral Science Foundation(Grant Nos.2018M630034 and 2019T120017)。
文摘The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surface roughness scattering,and remote Coulomb scatterings are considered,and the results are verified by the experimental results at different temperatures for both bulk(from 300 K to 30 K)and UTB SOI(300 K and 25 K)p-MOSFETs.The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature(4.2 K).The results reveal that as the temperature decreases,the RCS due to the interfacial trap charges plays an important role in the hole mobility.
文摘For the ground state of the homogeneous electron gas (jellium), it is shown how the cumulant decomposition of the 2-matrix leads to the cumulant decomposition of the structure factors Sa,p(q) for the antiparallel (a) and parallel (p) spin pairs and how it simultaneously allows one to derive the momentum distribution n(k), which is a one-body quantity [Phys. Rev. A 86, 012508 (2012)]. The small-q and large-q behavior of Sa,p(q), and their normalizations are derived and compared with the results of P. Gori-Giorgi et al. [Physica A 280, 199 (2000) and Phys. Rev. B 61, 7353 (2000)].
基金Project supported by the National Natural Science Foundation of China(Nos.61306126,61306127,61106015)the CAS International Collaboration and Innovation Program on High Mobility Materials Engineering
文摘sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0.5）Ge_（0.5）QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.
文摘Electrons are believed to avoid one another in space(correlation) due to the Coulomb repulsion and/or the Pauli exclusion principle.It is shown, using examples of two-electron systems, that indeed the mean electron-electron distance increases in case of the ground electronic state as compared to the independent electron model. It is demonstrated however that there exist excited states, often of low energy, in which the electrons, while having a lot of free physical space(with nuclei being absent), choose to be close to each other in their motion("anticorrelation"), as if they mutually attracted one another. The source of this effect, quantummechanical in nature, is the orthogonality of the eigenfunctions, that forces the electronic wave functions to differ widely, even at the price of short electron-electron distances. There are also excited states with a mixed behaviour, with complex and often intriguing correlation-anticorrelation patterns.
文摘Ⅰ.INTRODUCTIONWhen calculating the interaction energy between two hydrogen molecules with certain relative orientation, if we only wish to determine the position of the equilibrium point and the depth of the potential well, those with higher accuracy among the ab initio methods could be chosen, by which only several points near certain estimated position need to be calcu-
