Li(Sc,M)Si_(2)O_(6)∶Cr^(3+)(M=Ga^(3+)/Lu^(3+)/Y^(3+)/Gd^(3+))的近红外发光性能

荧光转换型近红外发光二极管(NIR pc-LED)具有体积小、谱带宽、峰位易调谐等优点,是新一代NIR光源发展的前沿,其关键在于研发可被蓝光有效激发的高效率宽带近红外荧光粉。LiScSi_(2)O_(6)∶Cr^(3+)荧光材料的激发波长为460 nm,发射峰位在845 nm,光谱带宽为156 nm,内量子效率为64.4%。基于该体系,本文通过M离子(M=Ga^(3+),Lu^(3+),Y^(3+),Gd^(3+))取代Sc^(3+)的方式对其性能进行调控。结果表明,引入M离子易生成杂相或发生相变,降低了材料的发光性能。本文从晶体结构出发对其调控过程进行了分析。

水热-烧结法制备Cr^(2+):ZnSe/ZnSe核壳结构纳米孪晶

Cr^(2+)掺杂ZnSe纳米晶是一种重要的中红外材料,核壳结构的ZnSe基半导体纳米晶表现出优异的光学、电学与催化性能。纳米晶的缺陷可以影响其性能,如具有孪晶结构的纳米晶拥有更高的强度和硬度。为了提高掺杂纳米晶的综合性能,本工作以可溶性Zn盐为Zn源,以新制NaHSe溶液为Se源,以Cr(AC)_(2)为掺杂源,通过两次水热过程制备了核壳结构Cr^(2+):ZnSe/ZnSe,在氩气保护或高真空下分别于400和800℃烧结获得了室温下化学性质稳定的纳米晶。结构和形貌表征结果显示,纳米晶尺寸主要集中在20~30 nm之间,壳体厚度约为2.6 nm,纳米晶具有层错缺陷,并由此发展成为孪晶。分析可知孪晶面为(111),相邻两晶面夹角为70.02°,误差在±0.5°以内。随着样品结晶度提高,孪晶密度增大,表明释放晶格畸变能为层错和孪晶的形成提供驱动力,孪晶的形核与长大符合位错诱导机制。XPS分析表明,Cr元素以+2价存在于纳米晶中;反射光谱测试结果分析发现,烧结的纳米晶在1775 nm附近存在吸收带,表明所制纳米孪晶具有潜在的中红外发光性能。

激活剂间隙位占据诱导氟化物NaHF_(2)∶Cr^(3+)的高效近红外发光

宽带近红外荧光粉转换型发光二极管(pc-LED)作为一种新型固态光源,在夜视照明、食品检测、生物成像等领域受到了广泛的关注。然而,如何实现高效的近红外发射仍然是一个巨大的挑战。本文采用水热法制备了氟化物近红外荧光粉NaHF_(2)∶Cr^(3+),发射峰位于761 nm,半高全宽约为112 nm,其内/外量子效率(IQE/EQE)为72.20%和29.6%。密度泛函理论(DFT)计算和晶体结构分析表明,Cr^(3+)离子在NaHF2体系中占据间隙位点,形成了高度畸变的八面体[CrF_(6)],有利于解除部分宇称禁阻跃迁,使得该荧光粉具有较高的发光效率。将荧光粉NaHF_(2)∶Cr^(3+)与蓝光InGaN芯片相结合,制备了近红外输出功率为426.74 mW@300 mA的pc-LED器件,在夜视成像等领域具有一定的应用前景。本研究也为设计高效近红外发射的Cr^(3+)激活荧光粉提供了新思路。

Co-doped BaFe_(2)As_(2) Josephson junction fabricated with a focused helium ion beam

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.

大尺寸优质Cr^(3+)∶BeAl_(2)O_(4)晶体生长与性能研究

本文采用感应加热提拉法结合上称重自动控径技术,成功生长出大尺寸、高质量的翠绿宝石(Cr^(3+)∶BeAl_(2)O_(4))晶体。晶坯等径圆柱体尺寸达到ϕ70 mm×140 mm,晶坯质量超过2800 g。通过冷光源照射晶坯,发现晶坯中心区域ϕ10~15 mm存在气泡。采用5 mW绿光激光照射ϕ8 mm×130 mm的翠绿宝石晶体棒,晶体内部无散射颗粒。利用Zygo激光平面干涉仪对晶体棒进行测试,波前畸变为0.3λ@632.8 nm。用电感耦合等离子体原子发射光谱法测定了翠绿宝石晶体的铬离子掺杂浓度,并计算出轴向浓度梯度为0.5×10^(-4)~1.9×10^(-4)cm^(-1)(摩尔分数)。用Perkin Elmer Lambda-950紫外可见近红外分光光度计测试了不同掺杂浓度的翠绿宝石晶体在室温下的吸收光谱,并计算了吸收系数。这些研究结果为翠绿宝石晶体的应用提供了重要的基础数据。

Neutral and metallic vs.charged and semiconducting surface layer in acceptor doped CeO_(2)

The monomolecular surface layer of acceptor doped CeO_(2) may become neutral and metallic or charged and semiconducting.This is revealed in the theoretical analysis of the oxygen pressure dependence of the surface defects concentration in acceptor doped ceria with two different dopant types and operated under different oxygen pressures.Recently published experimental data for highly reduced Sm0.2Ce0.8O1.9-x(SDC)containing a fixed valence dopant Sm3+are very different from those published for Pr0.1Ce0.9O_(2)-x(PCO) with the variable valence dopant Pr4+/Pr3+being reduced under milder conditions.The theoretical analysis of these experimental results fits very well the experimental results of SDC and PCO.It leads to the following predictions:the highly reduced surface of SDC is metallic and neutral,the metallic surface electron density of state is gs=0.9×10^(38)J-1·m^(-2)(1.4×1015eV^(-1)·cm^(-2)),the electron effective mass is meff,s=3.3me,and the phase diagram of the reduced surface has theα(fcc)structure as in the bulk.In PCO a double layer is predicted to be formed between the surface and the bulk with the surface being negatively charged and semiconducting.The surface of PCO maintains high Pr^(3+) defect concentration as well as relative high oxygen vacancy concentration at oxygen pressures higher than in the bulk.The reasons for the difference between a metallic and semiconducting surface layer of acceptor doped CeO_(2) are reviewed,as well as the key theoretical considerations applied in coping with this problem.For that we make use of the experimental data and theoretical analysis available for acceptor doped ceria.

植物补光用In^(3+)掺杂Zn_(3)Ga_(2)Ge_(2)O_(10)∶Cr^(3+)远红光发光材料的性能研究

采用高温固相法制备了Cr^(3+)掺杂的远红光荧光粉,并通过引入In^(3+)对Zn_(3)Ga_(2)Ge_(2)O_(10)∶Cr^(3+)发光特性进行了调控。通过XRD对Zn_(3)(Ga_(1-x)In_(x))_(2)Ge_(2)O_(10)∶2%Cr^(3+)(摩尔分数)的晶体结构进行了分析。利用室温荧光光谱和热释光光谱分析了Zn_(3)(Ga_(1-x)In_(x))_(2)Ge_(2)O_(10)∶2%Cr^(3+)的发光特性,其发射光谱由^(4)T_(2)(^(4)F)→^(4)A_(2)和^(2)E→^(4)A_(2)跃迁的705、721 nm两发光峰叠加而成。随着Zn_(3)(Ga_(1-x)In_(x))_(2)Ge_(2)O_(10)∶2%Cr^(3+)中In^(3+)掺杂浓度增加,材料发射光谱呈现展宽的现象,这是Cr^(3+)所处晶体场环境的改变导致了晶体场劈裂程度的变化。光谱展宽后荧光材料的发光特性与植物中光敏色素吸收谱更加匹配,因此其有望应用于植物照明领域。此外,随着In^(3+)掺杂浓度增加,荧光材料表现出红色长余辉现象,并且余辉时间与In^(3+)掺杂浓度有关。

Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage,in-memory computing, synaptic applications, etc. In recent years, two-dimensional(2D) materials with moderate defects have been discovered to exist memristive feature. However, it is very difficult to obtain moderate defect degree in 2D materials, and studied on modulation means and mechanism becomes urgent and essential. In this work, we realized memristive feature with a bipolar switching and a configurable on/off ratio in a two-terminal MoS_(2) device(on/off ratio ~100), for the first time, from absent to present using laser-modulation to few-layer defect-free MoS_(2)(about 10 layers), and its retention time in both high resistance state and low resistance state can reach 2×10^(4) s. The mechanism of the laser-induced memristive feature has been cleared by dynamic Monte Carlo simulations and first-principles calculations. Furthermore, we verified the universality of the laser-modulation by investigating other 2D materials of TMDs. Our work will open a route to modulate and optimize the performance of 2D semiconductor memristive devices.

Selective core-shell doping enabling high performance 4.6 V-LiCoO_(2)

Constructing robust surface and bulk structure is the prerequisite for realizing high performance high voltage LiCoO_(2)(LCO).Herein,we manage to synthesize a surface Mg-doping and bulk Al-doping coreshell structured LCO,which demonstrates excellent cycling performance.Half-cell shows 94.2%capacity retention after 100 cycles at 3.0-4.6 V(vs.Li/Li^(+))cycling,and no capacity decay after 300 cycles for fullcell test(3.0-4.55 V).Based on comprehensive microanalysis and theoretical calculations,the degradation mechanisms and doping effects are systematically revealed.For the undoped LCO,high voltage cycling induces severe interfacial and bulk degradations,where cracks,stripe defects,fatigue H2 phase,and spinel phase are identified in grain bulk.For the doped LCO,Mg-doped surface shell can suppress the interfacial degradations,which not only stabilizes the surface structure by forming a thin rock-salt layer but also significantly improves the electronic conductivity,thus enabling superior rate performance.Bulk Al-doping can suppress the lattice"breathing"effect and the detrimental H3 to H1-3 phase transition,which minimizes the internal strain and defects growth,maintaining the layered structure after prolonged cycling.Combining theoretical calculations,this work deepens our understanding of the doping effects of Mg and Al,which is valuable in guiding the future material design of high voltage LCO.

Durable hierarchical phosphorus‐doped biphase MoS_(2)electrocatalysts with enhanced H^(*)adsorption

Phase engineering is an efficient strategy for enhancing the kinetics of electrocatalytic reactions.Herein,phase engineering was employed to prepare high‐performance phosphorous‐doped biphase(1T/2H)MoS_(2)(P‐BMS)nanoflakes for hydrogen evolution reaction(HER).The doping of MoS_(2)with P atoms modifies its electronic structure and optimizes its electrocatalytic reaction kinetics,which significantly enhances its electrical conductivity and structural stability,which are verified by various characterization tools,including X‐ray photoelectron spectroscopy,high‐resolution transmission electron microscopy,X‐ray absorption near‐edge spectroscopy,and extended X‐ray absorption fine structure.Moreover,the hierarchically formed flakes of P‐BMS provide numerous catalytic surface‐active sites,which remarkably enhance its HER activity.The optimized P‐BMS electrocatalysts exhibit low overpotentials(60 and 72 mV at 10 mA cm^(−2))in H_(2)SO_(4)(0.5 M)and KOH(1.0 M),respectively.The mechanism of improving the HER activity of the material was systematically studied using density functional theory calculations and various electrochemical characterization techniques.This study has shown that phase engineering is a promising strategy for enhancing the H*adsorption of metal sulfides.

Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS_(2)

Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped 1T-TiS_(2) under high pressure by electrical resistance investigations,synchrotron x-ray diffraction,Raman scattering and theoretical calculations.Up to 70 GPa,an unusual metal-semiconductor-metal transition occurs.Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa is due to the electron localization induced by the intercalated Ti atoms.This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms,and the Anderson localization arising from the disordered intercalation.At pressures exceeding 30.5 GPa,the doped TiS_(2) undergoes a re-metallization transition initiated by a crystal structure phase transition.We assign the most probable space group as P2_(1)2_(1)2_(1).Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.

Enhanced stability of FA-based perovskite:Rare-earth metal compound EuBr_(2) doping

It is highly desirable to enhance the long-term stability of perovskite solar cells(PSCs)so that this class of photovoltaic cells can be effectively used for the commercialization purposes.In this contribution,attempts have been made to use the two-step sequential method to dope EuBr_(2)into FAMAPbI_(3)perovskite to promote the stability.It is shown that the device durability at 85℃in air with RH of 20%-40%is improved substantially,and simultaneously the champion device efficiency of 23.04%is achieved.The enhancement in stability is attributed to two points:(ⅰ)EuBr_(2)doping effectively inhibits the decomposition andα-δphase transition of perovskite under ambient environment,and(ⅱ)EuBr_(2)aggregates in the oxidized format of Eu(BrO_(3))_(3)at perovskite grain boundaries and surface,hampering humidity erosion and mitigates degradation through coordination with H_(2)O.

Small but mighty:Empowering sodium/potassium-ion battery performance with S-doped SnO_(2) quantum dots embedded in N,S codoped carbon fiber network

SnO_(2) has been extensively investigated as an anode material for sodium-ion batteries(SIBs)and potassium-ion batteries(PIBs)due to its high Na/K storage capacity,high abundance,and low toxicity.However,the sluggish reaction kinetics,low electronic conductivity,and large volume changes during charge and discharge hinder the practical applications of SnO_(2)-based electrodes for SIBs and PIBs.Engineering rational structures with fast charge/ion transfer and robust stability is important to overcoming these challenges.Herein,S-doped SnO_(2)(S-SnO_(2))quantum dots(QDs)(≈3 nm)encapsulated in an N,S codoped carbon fiber networks(S-SnO_(2)-CFN)are rationally fabricated using a sequential freeze-drying,calcination,and S-doping strategy.Experimental analysis and density functional theory calculations reveal that the integration of S-SnO_(2) QDs with N,S codoped carbon fiber network remarkably decreases the adsorption energies of Na/K atoms in the interlayer of SnO_(2)-CFN,and the S doping can increase the conductivity of SnO_(2),thereby enhancing the ion transfer kinetics.The synergistic interaction between S-SnO_(2) QDs and N,S codoped carbon fiber network results in a composite with fast Na+/K+storage and extraordinary long-term cyclability.Specifically,the S-SnO_(2)-CFN delivers high rate capacities of 141.0 mAh g^(−1) at 20 A g^(−1) in SIBs and 102.8 mAh g^(−1) at 10 A g^(−1) in PIBs.Impressively,it delivers ultra-stable sodium storage up to 10,000 cycles at 5 A g^(−1) and potassium storage up to 5000 cycles at 2 A g^(−1).This study provides insights into constructing metal oxide-based carbon fiber network structures for high-performance electrochemical energy storage and conversion devices.

Mg-doped SrTaO_(2)N as a visible-light-driven H_(2)-evolution photocatalyst for accelerated Z-scheme overall water splitting

Perovskite SrTaO_(2)N is one of the most promising narrow-bandgap photocatalysts for Z-scheme overall water splitting.However,the formation of defect states during thermal nitridation severely hinders the separation of charges,resulting in poor photocatalytic activity.In the present study,we successfully synthesize SrTaO_(2)N photocatalyst with low density of defect states,uniform morphology and particle size by flux-assisted one-pot nitridation combined with Mg doping.Some important parameters,such as the size of unit cell,the content of nitrogen,and microstructure,prove the successful doping of Mg.The defect-related carrier recombination has been significantly reduced by Mg doping,which effectively promotes the charge separation.Moreover,Mg doping induces a change of the band edge,which makes proton reduction have a stronger driving force.After modifying with the core/shell-structured Pt/Cr_(2)O_(3)cocatalyst,the H_(2)evolution activity of the optimized SrTaO_(2)N:Mg is 10 times that of the undoped SrTaO_(2)N,with an impressive apparent quantum yield of 1.51%at 420 nm.By coupling with Au-FeCoO_(x)modified BiVO_(4)as an O_(2)-evolution photocatalyst and[Fe(CN)_(6)]_(3)−/[Fe(CN)_(6)]_(4)−as the redox couple,a redox-based Z-scheme overall water splitting system is successfully constructed with an apparent quantum yield of 1.36%at 420 nm.This work provides an alternative way to prepare oxynitride semiconductors with reduced defects to promote the conversion of solar energy.

Nitrogen-doping boosts ^(*)CO utilization and H_(2)O activation on copper for improving CO_(2) reduction to C_(2+) products

To improve the electrocatalytic transformation of carbon dioxide (CO_(2)) to multi-carbon (C_(2+)) products is of great importance.Here we developed a nitrogen-doped Cu catalyst,by which the maximum C_(2+) Faradaic efficiency can reach 72.7%in flow-cell system,with the partial current density reaching 0.62 A cm^(-2).The in situ Raman spectra demonstrate that the *CO adsorption can be strengthened on such a N-doped Cu catalyst,thus promoting the *CO utilization in the subsequent C–C coupling step.Simultaneously,the water activation can be well enhanced by N doping on Cu catalyst.Owing to the synergistic effects,the selectivity and activity for C_(2+) products over the N-deoped Cu catalyst are much improved.

Defect Engineering in Earth-Abundant Cu_(2)ZnSnSe_(4) Absorber Using Efficient Alkali Doping for Flexible and Tandem Solar Cell Applications

To demonstrate flexible and tandem device applications,a low-temperature Cu_(2)ZnSnSe_(4)(CZTSe)deposition process,combined with efficient alkali doping,was developed.First,high-quality CZTSe films were grown at 480℃by a single co-evaporation,which is applicable to polyimide(PI)substrate.Because of the alkali-free substrate,Na and K alkali doping were systematically studied and optimized to precisely control the alkali distribution in CZTSe.The bulk defect density was significantly reduced by suppression of deep acceptor states after the(NaF+KF)PDTs.Through the low-temperature deposition with(NaF+KF)PDTs,the CZTSe device on glass yields the best efficiency of 8.1%with an improved Voc deficit of 646 mV.The developed deposition technologies have been applied to PI.For the first time,we report the highest efficiency of 6.92%for flexible CZTSe solar cells on PI.Additionally,CZTSe devices were utilized as bottom cells to fabricate four-terminal CZTSe/perovskite tandem cells because of a low bandgap of CZTSe(~1.0 eV)so that the tandem cell yielded an efficiency of 20%.The obtained results show that CZTSe solar cells prepared by a low-temperature process with in-situ alkali doping can be utilized for flexible thin-film solar cells as well as tandem device applications.

Homovalent doping:An efficient strategy of the enhanced TiNb_(2)O_(7)anode for lithium-ion batteries

The low energy density,unsatisfied cycling performance,potential safety issue and slow charging kinetics of the commercial lithium-ion batteries restrained their further application in the fields of fast charging and long-haul electric vehicles.Monoclinic TiNb_(2)O_(7)(TNO)with the theoretical capacity of 387 mAh g^(-1)has been proposed as a high-capacity anode materials to replace Li4Ti5O12.In this work,homovalent doping strategy was used to enhance the electrochemical performance of TiNb_(2)O_(7)(TNO)by employing Zr to partial substitute Ti through solvothermal method.The doping of Zr^(4+)ions can enlarge the lattice structure without changing the chemical valence of the original elements,refine and homogenize the grains,improve the electrical conductivity,and accelerate the ion diffusion kinetics,and finally enhance the cycle and rate performance.Specifically,Z0.05-TNO shows initial discharge capacity of as high as 312.2 mAh g^(-1)at 1 C and 244.8 mAh g^(-1)at 10 C,and still maintains a high specific capacity of 171.3 mAh g^(-1)after 800 cycles at 10 C.This study provides a new strategy for high-performance fast-charging energy storage electrodes.

Enhancing potassium-ion storage of Bi_(2)S_(3) through external–internal dual synergism: Ti_(3)C_(2)T_(x) compositing and Cu^(2+) doping

Potassium-ion batteries(PIBs)offer a cost-effective and resource-abundant solution for large-scale energy storage.However,the progress of PIBs is impeded by the lack of high-capacity,long-life,and fast-kinetics anode electrode materials.Here,we propose a dual synergic optimization strategy to enhance the K^(+)storage stability and reaction kinetics of Bi_(2)S_(3) through two-dimensional compositing and cation doping.Externally,Bi_(2)S_(3) nanoparticles are loaded onto the surface of three-dimensional interconnected Ti_(3)C_(2)T_(x) nanosheets to stabilize the electrode structure.Internally,Cu^(2+)doping acts as active sites to accelerate K^(+)storage kinetics.Various theoretical simulations and ex situ techniques are used to elucidate the external–internal dual synergism.During discharge,Ti_(3)C_(2)T_(x) and Cu^(2+)collaboratively facilitate K+intercalation.Subsequently,Cu^(2+)doping primarily promotes the fracture of Bi2S3 bonds,facilitating a conversion reaction.Throughout cycling,the Ti_(3)C_(2)T_(x) composite structure and Cu^(2+)doping sustain functionality.The resulting Cu^(2+)-doped Bi2S3 anchored on Ti_(3)C_(2)T_(x)(C-BT)shows excellent rate capability(600 mAh g^(-1) at 0.1 A g^(–1);105 mAh g^(-1) at 5.0 A g^(-1))and cycling performance(91 mAh g^(-1) at 5.0 A g^(-1) after 1000 cycles)in half cells and a high energy density(179 Wh kg–1)in full cells.

蓝光激发的KMgF_(3)∶Cr^(3+)/Ni^(2+)基透明微晶玻璃超宽带近红外发光

近红外光谱技术在食品科学、信息安全、生物医疗等重大国计民生领域的应用对近红外光源提出了越来越高的要求。研发具有高效超宽带发射的近红外光源因此成为一项重要且迫切的研究课题。本文采用熔融淬火法在氟硅酸盐玻璃体系SiO_(2)-K_(2)CO_(3)-KF·2H_(2)O-MgF_(2)中成功析出了钙钛矿型KMgF_(3)纳米晶体。通过改变玻璃组分和热处理温度可以调控氟化物纳米晶相的析出,得到析晶和透明度最佳的微晶玻璃样品。玻璃中KMgF_(3)纳米晶体为Cr^(3+)和Ni^(2+)提供了稳定的八面体配位和低声子能量发光环境,在450 nm蓝光激发下,基于Cr^(3+)到Ni^(2+)的能量传递实现了Cr^(3+)(700~1200 nm)和Ni^(2+)(1400~1700 nm)双宽带近红外发射,并且双宽带近红外发光强度随离子掺杂浓度而可调变化。荧光光谱和荧光衰减曲线表征证明了Cr^(3+)到Ni^(2+)的能量传递过程,对应的能量传递效率为52.2%,能量传递机制为电子偶极-四极相互作用。研究结果不仅可以为系统掌握透明光学材料的超宽带发光规律提供基础数据,同时有助于设计开发低成本、高效率的近红外宽带光源。

无定形TiO_(2)的F、La共掺杂及光催化脱硫性能

将钛酸四丁酯直接水解制备了无定形TiO_(2)〔TiO_(2)(Am)〕,将钛酸四丁酯在硝酸镧溶液或氟化铵溶液或其混合溶液中水解,分别制备了La掺杂型、F掺杂型以及F、La共掺杂型光催化剂,分别记为La-TiO_(2)(Am)、F-TiO_(2)(Am)和F-La-TiO_(2)(Am)。采用XRD、FTIR、XPS、UV-Vis DRS、SEM、PL及VB-XPS对其进行了表征,比较了其对模拟柴油〔二苯并噻吩(DBT)的正十二烷溶液〕的催化脱硫性能。结果表明,F、La共掺杂提升了TiO_(2)(Am)的吸光度和光吸收边缘红移程度,F的电负性使F-La-TiO_(2)(Am)的禁带宽度变窄,La—O键的生成为F-La-TiO_(2)(Am)提供了更多的氧空位,促进了杂质能级的生成,有效抑制了电子-空穴的复合。在以H_(2)O_(2)为氧化剂、无水甲醇为萃取剂、V(无水甲醇)∶V(模拟油)=1.0∶1、F-La-TiO_(2)(Am)用量为模拟柴油质量的1.0%、n(双氧水中O原子)∶n(DBT中S原子)=15∶1、反应时间3.0 h的条件下,模拟柴油脱硫率为94.10%。F-La-TiO_(2)(Am)使用4次后,脱硫率仍可达85.40%。在脱硫过程中,超氧自由基和空穴为主要活性物种,可将DBT转化成极性更强的亚砜和砜类物质,经由无水甲醇溶解后实现脱除。