CrI3 in two-dimensional(2D) forms has been attracting much attention lately due to its novel magnetic properties at atomic large scale.The size and edge tuning of electronic and magnetic properties for 2D materials ha...CrI3 in two-dimensional(2D) forms has been attracting much attention lately due to its novel magnetic properties at atomic large scale.The size and edge tuning of electronic and magnetic properties for 2D materials has been a promising way to broaden or even enhance their utility, as the case with nanoribbons/nanotubes in graphene, black phosphorus, and transition metal dichalcogenides.Here we studied the CrI3 nanoribbon(NR) and nanotube(NT) systematically to seek the possible size and edge control of the electronic and magnetic properties.We find that ferromagnetic ordering is stable in all the NR and NT structures of interest.An enhancement of the Curie temperature TC can be expected when the structure goes to NR or NT from its 2D counterpart.The energy difference between the FM and AFM states can be even improved by up to 3–4 times in a zigzag nanoribbon(ZZNR), largely because of the electronic instability arising from a large density of states of iodine-5p orbitals at EF.In NT structures, shrinking the tube size harvests an enhancement of spin moment by up to 4%, due to the reduced crystal-field gap and the re-balance between the spin majority and minority populations.展开更多
Spin ordering in a semiconductor has attracted much attention in the community of condensed matter physics. By combining ferromagnetism and the semiconducting nature, systems such as Mn-doped PbSnTe or InAs were found...Spin ordering in a semiconductor has attracted much attention in the community of condensed matter physics. By combining ferromagnetism and the semiconducting nature, systems such as Mn-doped PbSnTe or InAs were found to exhibit tunable magnetic properties responsive to an externally applied electric field. It thus holds great promises for developing novel spintronics with the tuning-knobs such as gate voltage. Conventionally, those systems are often studied in bulk forms and commonly referred to diluted magnetic semiconductor (DMS).展开更多
基金Project supported by the National Key R&D Program of China(Grant No.2017YFA0206301)the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC,China(Grant No.U1537204)
文摘CrI3 in two-dimensional(2D) forms has been attracting much attention lately due to its novel magnetic properties at atomic large scale.The size and edge tuning of electronic and magnetic properties for 2D materials has been a promising way to broaden or even enhance their utility, as the case with nanoribbons/nanotubes in graphene, black phosphorus, and transition metal dichalcogenides.Here we studied the CrI3 nanoribbon(NR) and nanotube(NT) systematically to seek the possible size and edge control of the electronic and magnetic properties.We find that ferromagnetic ordering is stable in all the NR and NT structures of interest.An enhancement of the Curie temperature TC can be expected when the structure goes to NR or NT from its 2D counterpart.The energy difference between the FM and AFM states can be even improved by up to 3–4 times in a zigzag nanoribbon(ZZNR), largely because of the electronic instability arising from a large density of states of iodine-5p orbitals at EF.In NT structures, shrinking the tube size harvests an enhancement of spin moment by up to 4%, due to the reduced crystal-field gap and the re-balance between the spin majority and minority populations.
文摘Spin ordering in a semiconductor has attracted much attention in the community of condensed matter physics. By combining ferromagnetism and the semiconducting nature, systems such as Mn-doped PbSnTe or InAs were found to exhibit tunable magnetic properties responsive to an externally applied electric field. It thus holds great promises for developing novel spintronics with the tuning-knobs such as gate voltage. Conventionally, those systems are often studied in bulk forms and commonly referred to diluted magnetic semiconductor (DMS).
基金financially supported by the National Natural Science Foundation of China (11974431, 11832019, 11622437, 61674171 and 11974422)Guangzhou Science and Technology Project (201707020002)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences (XDB30000000)the Fundamental Research Funds for the Central Universities and the Research Funds of Renmin University of China (16XNLQ01)supported by the Outstanding Innovative Talents Cultivation Funded Programs 2017 of Renmin University of China。
