In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The...In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).展开更多
Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better cr...Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.展开更多
For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular be...For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.展开更多
Cr_(2)O_(3)-bearing castables bonded with reactive MgO(RM)or calcium aluminate cement(CAC)were studied to evaluate the binder effect on their performance in corrosive environments.The properties of the as-prepared cas...Cr_(2)O_(3)-bearing castables bonded with reactive MgO(RM)or calcium aluminate cement(CAC)were studied to evaluate the binder effect on their performance in corrosive environments.The properties of the as-prepared castables were compared with respect to the differences in phase composition and microstructure.The corrosion behavior of the as-prepared castables by CaO-Al_(2)O_(3)-Fe_(2)O_(3)-SiO_(2)-based slag was systematically compared viarefractory cup testing at 1600℃with respect to the differences in phase composition and microstructure.The analysis indicates that RM bonded castables show higher apparent porosity,lower bulk density and strengths after drying at 110℃and firing at 1300℃,and higher permanent linear change after firing at 1300℃,but better slag corrosion and infiltration resistance compared with CAC bonded castables.展开更多
The Y_2O_3 thin film was applied on Fe-3Al intermetallic compound by electrodeposition and thermal decomposition. The cyclic oxidation of the Fe-3Al specimens with and without surfaceapplied Y_2O_3 thin film was carri...The Y_2O_3 thin film was applied on Fe-3Al intermetallic compound by electrodeposition and thermal decomposition. The cyclic oxidation of the Fe-3Al specimens with and without surfaceapplied Y_2O_3 thin film was carried out at 900 ℃ in air. The results show that the selective oxidation of Al in Fe-3Al was promoted, and both of the plasticity and the adhesion of the oxide scale formed on Fe3Al were improved and the high temperature oxidation resistance of Fe3Al was enhanced markedly.展开更多
YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic fi...YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic field. The orientation relationship of the multilayer film superconductor has been determined. The(001) plane of the YBCO film is parallel to the(100) surface of the YSZ intermediate layer. YSZ buffer layer with(100) preferred orientation is about 20 nm thick and contains element Ba, due to out-diffusion of Ba from YBCO layer. The(100) preferred orientation of YSZ buffer permits the growth of high quality YBCO thin film. Y2BaCuO5 precipitates with small size distribute uniformly in the YBCO thin film and it is favourable to raise critical current density Jc.展开更多
The patterning technologies and process order of high Tc(86K) super-conducting film bolometers have been studied. After the deposition, a conventional lithographic process was used to pattern the films with aqueous so...The patterning technologies and process order of high Tc(86K) super-conducting film bolometers have been studied. After the deposition, a conventional lithographic process was used to pattern the films with aqueous solution of HCl, and then the films were transferred into a tube furnace for annealing to form superconducting film. It eliminates the degradation of patterning process. The bolometric responsivity of approximately 34. 32 V/W is measured, and the detectivity is greater than 1. 62× 108cm · Hz1/2 · W-1, the noise equivalent powers NEP is 2. 1×10-9W.展开更多
The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma e...The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga_(2)O_(3) thin films grown on sapphire substrates by chemical vapor deposition.The results in-dicate that the H incorporation leads to a significantly increased electrical conductivity,a greatly reduced defect-related photolu-minescence emission,and a slightly enhanced transmittance,while it has little effect on the crystalline quality of theβ-Ga_(2)O_(3) films.The significant changes in the electrical and optical properties ofβ-Ga_(2)O_(3) may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H.Temperature dependent electrical properties of the H-in-corporatedβ-Ga_(2)O_(3) films are also investigated,and the dominant scattering mechanisms at various temperatures are dis-cussed.展开更多
基金Funded by the Youth Backbone Teacher Training Plan in University of Henan Province(No.21220028)Science and Technology Research Project of Henan Province(No.242102321066)+2 种基金Natural Science Foundation of Henan Province(No.232300420312)Henan University of Technology Young Backbone Teacher Training Plan(No.21421260)the Innovation Training Program for College Students in Henan Province(No.202310463046)。
文摘In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).
基金Project supported by the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2022JQ-701)the Scientific Research Program Funded by Shaanxi Provincial Education Department,China(Grant No.21JK0919)。
文摘Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.
基金Project supported by the Enterprise Science and Technology Correspondent for Guangdong Province,China (Grant No.GDKTP2021015200)。
文摘For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.
基金the Joint Founds of R&D Program of Henan Province (222301420034)National Natural Science Foundation of China (51802287)Collaborative Innovation Major Special Project of Zhengzhou (No. 20XTZX12025) for the financial support
文摘Cr_(2)O_(3)-bearing castables bonded with reactive MgO(RM)or calcium aluminate cement(CAC)were studied to evaluate the binder effect on their performance in corrosive environments.The properties of the as-prepared castables were compared with respect to the differences in phase composition and microstructure.The corrosion behavior of the as-prepared castables by CaO-Al_(2)O_(3)-Fe_(2)O_(3)-SiO_(2)-based slag was systematically compared viarefractory cup testing at 1600℃with respect to the differences in phase composition and microstructure.The analysis indicates that RM bonded castables show higher apparent porosity,lower bulk density and strengths after drying at 110℃and firing at 1300℃,and higher permanent linear change after firing at 1300℃,but better slag corrosion and infiltration resistance compared with CAC bonded castables.
文摘The Y_2O_3 thin film was applied on Fe-3Al intermetallic compound by electrodeposition and thermal decomposition. The cyclic oxidation of the Fe-3Al specimens with and without surfaceapplied Y_2O_3 thin film was carried out at 900 ℃ in air. The results show that the selective oxidation of Al in Fe-3Al was promoted, and both of the plasticity and the adhesion of the oxide scale formed on Fe3Al were improved and the high temperature oxidation resistance of Fe3Al was enhanced markedly.
文摘YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic field. The orientation relationship of the multilayer film superconductor has been determined. The(001) plane of the YBCO film is parallel to the(100) surface of the YSZ intermediate layer. YSZ buffer layer with(100) preferred orientation is about 20 nm thick and contains element Ba, due to out-diffusion of Ba from YBCO layer. The(100) preferred orientation of YSZ buffer permits the growth of high quality YBCO thin film. Y2BaCuO5 precipitates with small size distribute uniformly in the YBCO thin film and it is favourable to raise critical current density Jc.
文摘The patterning technologies and process order of high Tc(86K) super-conducting film bolometers have been studied. After the deposition, a conventional lithographic process was used to pattern the films with aqueous solution of HCl, and then the films were transferred into a tube furnace for annealing to form superconducting film. It eliminates the degradation of patterning process. The bolometric responsivity of approximately 34. 32 V/W is measured, and the detectivity is greater than 1. 62× 108cm · Hz1/2 · W-1, the noise equivalent powers NEP is 2. 1×10-9W.
基金supported by the National Natural Science Foundation of China (Grant Nos. 62174009, 61904174 and 61874106)the Natural Science Foundation of Beijing Municipality (Grant No. 4212045)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43000000)
文摘The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga_(2)O_(3) thin films grown on sapphire substrates by chemical vapor deposition.The results in-dicate that the H incorporation leads to a significantly increased electrical conductivity,a greatly reduced defect-related photolu-minescence emission,and a slightly enhanced transmittance,while it has little effect on the crystalline quality of theβ-Ga_(2)O_(3) films.The significant changes in the electrical and optical properties ofβ-Ga_(2)O_(3) may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H.Temperature dependent electrical properties of the H-in-corporatedβ-Ga_(2)O_(3) films are also investigated,and the dominant scattering mechanisms at various temperatures are dis-cussed.
