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Reversal current observed in micro-and submicro-channel flow under non-continuous DC electric field
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作者 段一飞 马宏伟 +7 位作者 高泽阳 王凯歌 赵伟 孙聃 王归仁 李俊杰 白晋涛 顾长志 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第6期481-490,共10页
In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the move... In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the movement of single molecule within micro-/submicro-fluidic channels, the characteristics of current signals at the initial stage of the flow are systematically studied based on a three-electrode system. The current response of micro-/submicro-fluidic channels filled with different electrolyte solutions in non-continuous external electric field are investigated. It is found, there always exists a current reversal phenomenon, which is an inherent property of the current signals in micro/submicro-fluidics Each solution has an individual critical voltage under which the steady current value is equal to zero The interaction between the steady current and external applied voltage follows an exponential function. All these results can be attributed to the overpotentials of the electric double layer on the electrodes. These results are helpful for the design and fabrication of functional micro/nano-scale fluidic sensors and biochips. 展开更多
关键词 micro/nano-fluidic channel reversed-current phenomenon critical voltage steady current over-potential electric double layer
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NUMERICAL ANALYSIS OF THEORETICAL MODEL OF THE RF MEMS SWITCHES 被引量:5
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作者 张立宪 余同希 赵亚溥 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2004年第2期178-184,共7页
An improved electromechanical model of the RF MEMS(radio frequency microelec- tromechanical systems)switches is introduced,in which the effects of intrinsic residual stress from fabrication processes,axial stress due ... An improved electromechanical model of the RF MEMS(radio frequency microelec- tromechanical systems)switches is introduced,in which the effects of intrinsic residual stress from fabrication processes,axial stress due to stretching of beam,and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model.A semi- analytical method is developed to calculate the behavior of the RF MEMS switches.Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared,and the corresponding analysis with the dimensionless numbers is conducted too.The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given. 展开更多
关键词 RF MEMS axial stretching residual stress fringing field critical pull-in voltage
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Electrothermal energy conversion mechanism of micro-scale semiconductor bridge
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作者 杨贵丽 焦清介 +1 位作者 金兆鑫 徐新春 《Journal of Beijing Institute of Technology》 EI CAS 2011年第1期23-29,共7页
The response characteristics of resistance is observed by the analysis of experimental data of micro scale semiconductor bridge (MSCB) under different voltage inputs. Two critical voltages are found. One is called e... The response characteristics of resistance is observed by the analysis of experimental data of micro scale semiconductor bridge (MSCB) under different voltage inputs. Two critical voltages are found. One is called exploding voltage, above which the MSCB can be melted and vaporized without generating a plasma, and the other is called producing a plasma voltage, above which the MSCB is entirely vaporized, and then the current flows through the vapor producing the plasma. Based on the non Fourier heat conduction theory, the electrothermal energy conversion model is es tablished for the stage from heating to exploding, and then the correlation of MSCB and time is ob tained by graphic calculation. Importantly, the critical exploding voltage and exploding time are also derivate. With the comparison between the analytical result from the theoretical model and that from experimental data, it has been demonstrated that the theoretical model is reasonable and feasible for designing the exploding voltage and exploding time. 展开更多
关键词 micro scale semiconductor bridge energy conversion mechanism capacitor discharge critical exploding voltage exploding time
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Orbiting Optimization Model for Tracking Voltage Security Region Boundary in Bulk Power Grids
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作者 Xue Li Tao Jiang +4 位作者 Linquan Bai Xiao Kou Fangxing Li Houhe Chen Guoqing Li 《CSEE Journal of Power and Energy Systems》 SCIE EI CSCD 2022年第2期476-487,共12页
A voltage security region(VSR)is a powerful tool for monitoring the voltage security in bulk power grids with high penetration of renewables.It can prevent cascading failures in wind power integration areas caused by ... A voltage security region(VSR)is a powerful tool for monitoring the voltage security in bulk power grids with high penetration of renewables.It can prevent cascading failures in wind power integration areas caused by serious over or low voltage problems.The bottlenecks of a VSR for practical applications are computational efficiency and accuracy.To bridge these gaps,a general optimization model for tracking a voltage security region boundary(VSRB)in bulk power grids is developed in this paper in accordance with the topological characteristics of the VSRB.First,the initial VSRB point on the VSRB is examined with the traditional OPF by using the base case parameters as initial values.Then,the rest of the VSRB points on the VSRB are tracked one after another,with the proposed optimization model,by using the parameters of the tracked VSRB point as the initial value to explore its adjacent VSRB point.The proposed approach can significantly improve the computational efficiency of the VSRB tracking over the existing algorithms,and case studies,in the WECC 9-bus and the Polish 2736-bus test systems,demonstrate the high accuracy and efficiency of the proposed approach on exploring the VSRB. 展开更多
关键词 Optimal power flow(OPF) stress direction voltage security critical point voltage security region voltage security region boundary
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