随着信息时代的到来,数据的爆炸式增长使得传统的冯诺依曼计算系统在存储和计算效率方面均面临着巨大挑战。受人脑神经网络的启发,面向存算一体的电子器件具有很好的发展前景。忆阻器作为一种新兴的人工突触器件,能够根据施加电压或电...随着信息时代的到来,数据的爆炸式增长使得传统的冯诺依曼计算系统在存储和计算效率方面均面临着巨大挑战。受人脑神经网络的启发,面向存算一体的电子器件具有很好的发展前景。忆阻器作为一种新兴的人工突触器件,能够根据施加电压或电流的历史保持内阻状态,实现生物突触功能和神经形态计算。文章制备了一种基于卤化物钙钛矿CsPbBr3的人工突触。采用溶胶–凝胶法制备了CsPbBr3薄膜,并通过旋涂退火获得了Au/CsPbBr3/ITO结构的人工突触,其学习记忆行为与生物神经元相似。此外,突触可塑性也得到了证实,包括短期突触可塑性和长期突触可塑性。With the advent of the information age, the explosive growth of data makes the traditional von Neumann computing system face great challenges in terms of storage and computing efficiency. Inspired by human brain neural network, electronic devices for memory and computer integration have a good development prospect. As a new kind of artificial synaptic device, memristor can maintain the internal resistance state according to the history of applied voltage or current, and realize the synaptic function and neuromorphic calculation. In this paper, an artificial synapse based on halide perovskite CsPbBr3 is prepared. CsPbBr3 films were prepared by sol-gel method, and Au/CsPbBr3/ITO structures were obtained by spinning annealing. The learning and memory behavior of CsPbBr3 was similar to that of biological neurons. In addition, synaptic plasticity has been demonstrated, including short-term plasticity and long-term plasticity.展开更多
Wet chemistry methods,including hot-injection and precipitation methods,have emerged as major synthetic routes for high-quality perovskite nanocrystals in backlit display and scintillation applications.However,low che...Wet chemistry methods,including hot-injection and precipitation methods,have emerged as major synthetic routes for high-quality perovskite nanocrystals in backlit display and scintillation applications.However,low chemical yield hinders their upscale production for practical use.Meanwhile,the labile nature of halide-based perovskite poses a major challenge for long-term storage of perovskite nanocrystals.Herein,we report a green synthesis at room temperature for gram-scale production of CsPbBr3 nanosheets with minimum use of solvent,saving over 95% of the solvent for the unity mass nanocrystal production.The perovskite colloid exhibits record stability upon long-term storage for up to 8 months,preserving a photoluminescence quantum yield of 63% in solid state.Importantly,the colloidal nanosheets show self-assembly behavior upon slow solidification,generating a crack-free thin film in a large area.The uniform film was then demonstrated as an efficient scintillation screen for X-ray imaging.Our findings bring a scalable tool for synthesis of high-quality perovskite nanocrystals,which may inspire the industrial optoelectronic application of large-area perovskite film.展开更多
All-inorganic cesium lead bromide(CsPbBr3)perovskite is attracting growing interest as functional materials in photovoltaics and other optoelectronic devices due to its superb stability.However,the fabrication of high...All-inorganic cesium lead bromide(CsPbBr3)perovskite is attracting growing interest as functional materials in photovoltaics and other optoelectronic devices due to its superb stability.However,the fabrication of high-quality CsPbBr3 films still remains a big challenge by solution-process because of the low solubility of the cesium precursor in common solvents.Herein,we report a facile solution-processed approach to prepare high-quality CsPbBr3 perovskite films via a two-step spin-coating method,in which the Cs Br methanol/H2 O mixed solvent solution is spin-coated onto the lead bromide films,followed by an isopropanol-assisted post-treatment to regulate the crystallization process and to control the film morphology.In this fashion,dense and uniform CsPbBr3 films are obtained consisting of large crystalline domains with sizes up to microns and low defect density.The effectiveness of the resulting CsPbBr3 films is further examined in perovskite solar cells(PSCs)with a simplified planar architecture of fluorine–doped tin oxide/compact Ti O2/CsPbBr3/carbon,which deliver a maximum power conversion efficiency of 8.11%together with excellent thermal and humidity stability.The present work offers a simple and effective strategy in fabrication of high-quality CsPbBr3 films for efficient and stable PSCs as well as other optoelectronic devices.展开更多
Metal halide perovskite solar cells(PSCs) have attracted extensive research interest for next-generation solution-processed photovoltaic devices because of their high solar-to-electric power conversion efficiency(PCE)...Metal halide perovskite solar cells(PSCs) have attracted extensive research interest for next-generation solution-processed photovoltaic devices because of their high solar-to-electric power conversion efficiency(PCE)and low fabrication cost. Although the world's best PSC successfully achieves a considerable PCE of over 20% within a very limited timeframe after intensive efforts, the stability, high cost, and up-scaling of PSCs still remain issues. Recently, inorganic perovskite material, CsPbBr_3, is emerging as a promising photo-sensitizer with excellent durability and thermal stability, but the efficiency is still embarrassing. In this work, we intend to address these issues by exploiting CsPbBr_3 as light absorber, accompanied by using Cu-phthalocyanine(CuPc) as hole transport material(HTM) and carbon as counter electrode. The optimal device acquires a decent PCE of 6.21%, over 60% higher than those of the HTM-free devices. The systematic characterization and analysis reveal a more effective charge transfer process and a suppressed charge recombination in PSCs after introducing CuPc as hole transfer layer. More importantly, our devices exhibit an outstanding durability and a promising thermal stability, making it rather meaningful in future fabrication and application of PSCs.展开更多
文摘随着信息时代的到来,数据的爆炸式增长使得传统的冯诺依曼计算系统在存储和计算效率方面均面临着巨大挑战。受人脑神经网络的启发,面向存算一体的电子器件具有很好的发展前景。忆阻器作为一种新兴的人工突触器件,能够根据施加电压或电流的历史保持内阻状态,实现生物突触功能和神经形态计算。文章制备了一种基于卤化物钙钛矿CsPbBr3的人工突触。采用溶胶–凝胶法制备了CsPbBr3薄膜,并通过旋涂退火获得了Au/CsPbBr3/ITO结构的人工突触,其学习记忆行为与生物神经元相似。此外,突触可塑性也得到了证实,包括短期突触可塑性和长期突触可塑性。With the advent of the information age, the explosive growth of data makes the traditional von Neumann computing system face great challenges in terms of storage and computing efficiency. Inspired by human brain neural network, electronic devices for memory and computer integration have a good development prospect. As a new kind of artificial synaptic device, memristor can maintain the internal resistance state according to the history of applied voltage or current, and realize the synaptic function and neuromorphic calculation. In this paper, an artificial synapse based on halide perovskite CsPbBr3 is prepared. CsPbBr3 films were prepared by sol-gel method, and Au/CsPbBr3/ITO structures were obtained by spinning annealing. The learning and memory behavior of CsPbBr3 was similar to that of biological neurons. In addition, synaptic plasticity has been demonstrated, including short-term plasticity and long-term plasticity.
基金supported by National Natural Science Foundation of China (Nos. 21805111 and 11405073)Taishan Scholar Fund
文摘Wet chemistry methods,including hot-injection and precipitation methods,have emerged as major synthetic routes for high-quality perovskite nanocrystals in backlit display and scintillation applications.However,low chemical yield hinders their upscale production for practical use.Meanwhile,the labile nature of halide-based perovskite poses a major challenge for long-term storage of perovskite nanocrystals.Herein,we report a green synthesis at room temperature for gram-scale production of CsPbBr3 nanosheets with minimum use of solvent,saving over 95% of the solvent for the unity mass nanocrystal production.The perovskite colloid exhibits record stability upon long-term storage for up to 8 months,preserving a photoluminescence quantum yield of 63% in solid state.Importantly,the colloidal nanosheets show self-assembly behavior upon slow solidification,generating a crack-free thin film in a large area.The uniform film was then demonstrated as an efficient scintillation screen for X-ray imaging.Our findings bring a scalable tool for synthesis of high-quality perovskite nanocrystals,which may inspire the industrial optoelectronic application of large-area perovskite film.
基金financial support by the National Natural Science Foundation of China(21975038,21606039,and 51661135021)the Swiss National Science Foundation(IZLCZ2_170177)+3 种基金the Fundamental Research Funds for the Central Universities(DUT17JC39)the Swedish Foundation for Strategic Research(SSF)the Swedish Energy Agencythe Knut and Alice Wallenberg Foundation。
文摘All-inorganic cesium lead bromide(CsPbBr3)perovskite is attracting growing interest as functional materials in photovoltaics and other optoelectronic devices due to its superb stability.However,the fabrication of high-quality CsPbBr3 films still remains a big challenge by solution-process because of the low solubility of the cesium precursor in common solvents.Herein,we report a facile solution-processed approach to prepare high-quality CsPbBr3 perovskite films via a two-step spin-coating method,in which the Cs Br methanol/H2 O mixed solvent solution is spin-coated onto the lead bromide films,followed by an isopropanol-assisted post-treatment to regulate the crystallization process and to control the film morphology.In this fashion,dense and uniform CsPbBr3 films are obtained consisting of large crystalline domains with sizes up to microns and low defect density.The effectiveness of the resulting CsPbBr3 films is further examined in perovskite solar cells(PSCs)with a simplified planar architecture of fluorine–doped tin oxide/compact Ti O2/CsPbBr3/carbon,which deliver a maximum power conversion efficiency of 8.11%together with excellent thermal and humidity stability.The present work offers a simple and effective strategy in fabrication of high-quality CsPbBr3 films for efficient and stable PSCs as well as other optoelectronic devices.
基金the financial support from the National Natural Science Foundation of China (Grant Nos. 51675210 and 51675209)the China Postdoctoral Science Foundation (Grant No. 2016M602283)
文摘Metal halide perovskite solar cells(PSCs) have attracted extensive research interest for next-generation solution-processed photovoltaic devices because of their high solar-to-electric power conversion efficiency(PCE)and low fabrication cost. Although the world's best PSC successfully achieves a considerable PCE of over 20% within a very limited timeframe after intensive efforts, the stability, high cost, and up-scaling of PSCs still remain issues. Recently, inorganic perovskite material, CsPbBr_3, is emerging as a promising photo-sensitizer with excellent durability and thermal stability, but the efficiency is still embarrassing. In this work, we intend to address these issues by exploiting CsPbBr_3 as light absorber, accompanied by using Cu-phthalocyanine(CuPc) as hole transport material(HTM) and carbon as counter electrode. The optimal device acquires a decent PCE of 6.21%, over 60% higher than those of the HTM-free devices. The systematic characterization and analysis reveal a more effective charge transfer process and a suppressed charge recombination in PSCs after introducing CuPc as hole transfer layer. More importantly, our devices exhibit an outstanding durability and a promising thermal stability, making it rather meaningful in future fabrication and application of PSCs.
