Metal halide perovskite solar cells(PSCs) have attracted extensive research interest for next-generation solution-processed photovoltaic devices because of their high solar-to-electric power conversion efficiency(PCE)...Metal halide perovskite solar cells(PSCs) have attracted extensive research interest for next-generation solution-processed photovoltaic devices because of their high solar-to-electric power conversion efficiency(PCE)and low fabrication cost. Although the world's best PSC successfully achieves a considerable PCE of over 20% within a very limited timeframe after intensive efforts, the stability, high cost, and up-scaling of PSCs still remain issues. Recently, inorganic perovskite material, CsPbBr_3, is emerging as a promising photo-sensitizer with excellent durability and thermal stability, but the efficiency is still embarrassing. In this work, we intend to address these issues by exploiting CsPbBr_3 as light absorber, accompanied by using Cu-phthalocyanine(CuPc) as hole transport material(HTM) and carbon as counter electrode. The optimal device acquires a decent PCE of 6.21%, over 60% higher than those of the HTM-free devices. The systematic characterization and analysis reveal a more effective charge transfer process and a suppressed charge recombination in PSCs after introducing CuPc as hole transfer layer. More importantly, our devices exhibit an outstanding durability and a promising thermal stability, making it rather meaningful in future fabrication and application of PSCs.展开更多
Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation en...Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)films.Such a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)phase.Theoretical calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)planes.Therefore,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation stability.Meanwhile,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.展开更多
Artificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence.The memristor is an ideal artificial synaptic device with fast operation and g...Artificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence.The memristor is an ideal artificial synaptic device with fast operation and good tolerance.Here,we have prepared a memristor device with Au/CsPbBr_(3)/ITO structure.The memristor device exhibits resistance switching behavior,the high and low resistance states no obvious decline after 400 switching times.The memristor device is stimulated by voltage pulses to simulate biological synaptic plasticity,such as long-term potentiation,long-term depression,pair-pulse facilitation,short-term depression,and short-term potentiation.The transformation from short-term memory to long-term memory is achieved by changing the stimulation frequency.In addition,a convolutional neural network was constructed to train/recognize MNIST handwritten data sets;a distinguished recognition accuracy of~96.7%on the digital image was obtained in 100 epochs,which is more accurate than other memristor-based neural networks.These results show that the memristor device based on CsPbBr3 has immense potential in the neuromorphic computing system.展开更多
Hole transport material free carbon-based all-inorganic CsPbBr_(3)perovskite solar cells(PSCs)are promising for commercialization due to its low-cost,high open-circuit voltage(V_(oc))and superior stability.Due to the ...Hole transport material free carbon-based all-inorganic CsPbBr_(3)perovskite solar cells(PSCs)are promising for commercialization due to its low-cost,high open-circuit voltage(V_(oc))and superior stability.Due to the different solubility of PbBr_(2)and CsBr in conventional solvents,CsPbBr_(3)films are mainly obtained by multi-step spin-coating through the phase evolution from PbBr_(2)to CsPb_(2)Br_(5)and then to CsPbBr_(3).The scalable fabrication of high-quality CsPbBr_(3)films has been rarely studied.Herein,an inkjet-printing method is developed to prepare high-quality CsPbBr_(3)films.The formation of long-range crystalline CsPb_(2)Br_(5)phase can effectively improve phase purity and promote regular crystal stacking of CsPbBr_(3).Consequently,the inkjet-printed CsPbBr_(3)C-PSCs realized PCEs up to 9.09%,8.59%and 7.81%with active areas of 0.09,0.25,and 1 cm^(2),respectively,demonstrating the upscaling potential of our fabrication method and devices.This high performance is mainly ascribed to the high purity,strong crystal orientation,reduced surface roughness and lower trap states density of the as-printed CsPbBr_(3)films.This work provides insights into the relationship between the phase evolution mechanisms and crystal growth dynamics of cesium lead bromide halide films.展开更多
基金the financial support from the National Natural Science Foundation of China (Grant Nos. 51675210 and 51675209)the China Postdoctoral Science Foundation (Grant No. 2016M602283)
文摘Metal halide perovskite solar cells(PSCs) have attracted extensive research interest for next-generation solution-processed photovoltaic devices because of their high solar-to-electric power conversion efficiency(PCE)and low fabrication cost. Although the world's best PSC successfully achieves a considerable PCE of over 20% within a very limited timeframe after intensive efforts, the stability, high cost, and up-scaling of PSCs still remain issues. Recently, inorganic perovskite material, CsPbBr_3, is emerging as a promising photo-sensitizer with excellent durability and thermal stability, but the efficiency is still embarrassing. In this work, we intend to address these issues by exploiting CsPbBr_3 as light absorber, accompanied by using Cu-phthalocyanine(CuPc) as hole transport material(HTM) and carbon as counter electrode. The optimal device acquires a decent PCE of 6.21%, over 60% higher than those of the HTM-free devices. The systematic characterization and analysis reveal a more effective charge transfer process and a suppressed charge recombination in PSCs after introducing CuPc as hole transfer layer. More importantly, our devices exhibit an outstanding durability and a promising thermal stability, making it rather meaningful in future fabrication and application of PSCs.
基金the financial support from the National Key R&D program of China(2021YFF0500501 and 2021YFF0500504)the Fundamental Research Funds for the Central Universities(YJS2213 and JB211408)+1 种基金the National Natural Science Foundation of China(61874083)the Joint Research Funds of Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University(No.2020GXLH-Z-014)
文摘Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)films.Such a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)phase.Theoretical calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)planes.Therefore,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation stability.Meanwhile,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.
基金sponsored by the National Natural Science Foundation of China(Grant Nos 11574057,and 12172093)the Guangdong Basic and Applied Basic Research Foundation(Grant No.2021A1515012607).
文摘Artificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence.The memristor is an ideal artificial synaptic device with fast operation and good tolerance.Here,we have prepared a memristor device with Au/CsPbBr_(3)/ITO structure.The memristor device exhibits resistance switching behavior,the high and low resistance states no obvious decline after 400 switching times.The memristor device is stimulated by voltage pulses to simulate biological synaptic plasticity,such as long-term potentiation,long-term depression,pair-pulse facilitation,short-term depression,and short-term potentiation.The transformation from short-term memory to long-term memory is achieved by changing the stimulation frequency.In addition,a convolutional neural network was constructed to train/recognize MNIST handwritten data sets;a distinguished recognition accuracy of~96.7%on the digital image was obtained in 100 epochs,which is more accurate than other memristor-based neural networks.These results show that the memristor device based on CsPbBr3 has immense potential in the neuromorphic computing system.
基金supported by the National Key Research and Development Program of China(Grant Nos.2021YFB3800100 and 2021YFB3800101)the National Natural Science Foundation of China(62004089,U2001217,and U19A2089)+6 种基金the Guangdong Basic and Applied Basic Research Foundation(2019A1515110439,2019B1515120083,and2022A1515011218)the Shenzhen Science and Technology Program(JCYJ20190809150811504 and KQTD2015033110182370)the HKRGC General Research Funds(16312216)the Shenzhen&Hong Kong Joint Research Program(SGLH20180622092406130)the Shenzhen Engineering Research and Development Center for Flexible Solar Cel s Project funding from Shenzhen Development and Reform Committee(2019-126)the Key Fundamental Research Project funding from the Shenzhen Science and Technology Innovation Committee(JCYJ20200109141014474)the Guangdong-Hong Kong-Macao Joint Laboratory(2019B121205001)
文摘Hole transport material free carbon-based all-inorganic CsPbBr_(3)perovskite solar cells(PSCs)are promising for commercialization due to its low-cost,high open-circuit voltage(V_(oc))and superior stability.Due to the different solubility of PbBr_(2)and CsBr in conventional solvents,CsPbBr_(3)films are mainly obtained by multi-step spin-coating through the phase evolution from PbBr_(2)to CsPb_(2)Br_(5)and then to CsPbBr_(3).The scalable fabrication of high-quality CsPbBr_(3)films has been rarely studied.Herein,an inkjet-printing method is developed to prepare high-quality CsPbBr_(3)films.The formation of long-range crystalline CsPb_(2)Br_(5)phase can effectively improve phase purity and promote regular crystal stacking of CsPbBr_(3).Consequently,the inkjet-printed CsPbBr_(3)C-PSCs realized PCEs up to 9.09%,8.59%and 7.81%with active areas of 0.09,0.25,and 1 cm^(2),respectively,demonstrating the upscaling potential of our fabrication method and devices.This high performance is mainly ascribed to the high purity,strong crystal orientation,reduced surface roughness and lower trap states density of the as-printed CsPbBr_(3)films.This work provides insights into the relationship between the phase evolution mechanisms and crystal growth dynamics of cesium lead bromide halide films.
