Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance o...Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.展开更多
The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq...The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq 3 molecule, the binding energy ( E b) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533.2 eV. As the sputtering time of Ar + ion beam increases, Al 2p , C 1s , N 1s , O 1s , In 3d 5/2 and Sn 3d 5/2 peaks slightly shift towards lower binding energy, and Al 2p , C 1s and N 1s peaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq 3 layer.展开更多
基金supported by the National Key R&D Program of China under Grant No.2017YFA0305500National Natural Science Foundation of China under Grant No.61904096,Taishan Scholars Program of Shandong Province under Grant No.tsqn201812006+2 种基金Natural Science Foundation of Shandong Province under Grants No.ZR2022JQ05 and No.ZR2022QF025Shandong University Multidisciplinary Research and Innovation Team of Young Scholars under Grant No.2020QNQT015“Outstanding Youth Scholar and Qilu Young Scholar”Programs of Shandong University.
文摘Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.
文摘The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq 3 molecule, the binding energy ( E b) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533.2 eV. As the sputtering time of Ar + ion beam increases, Al 2p , C 1s , N 1s , O 1s , In 3d 5/2 and Sn 3d 5/2 peaks slightly shift towards lower binding energy, and Al 2p , C 1s and N 1s peaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq 3 layer.
