The properties of Sc-dopedθ′(Al_(2)Cu)/Al interface in Al−Cu alloys were investigated by first-principles calculations.Sc-doped semi-coherent and coherentθ′(Al_(2)Cu)/Al interfaces(Sc doped in Al slab(S1 site),Sc ...The properties of Sc-dopedθ′(Al_(2)Cu)/Al interface in Al−Cu alloys were investigated by first-principles calculations.Sc-doped semi-coherent and coherentθ′(Al_(2)Cu)/Al interfaces(Sc doped in Al slab(S1 site),Sc doped inθ′slab(S2 site))were modeled based on calculated results and reported experiments.Through the analysis of interfacial bonding strength,it is revealed that the doping of Sc at S1 site can significantly decrease the interface energy and increase the work of adhesion.In particular,the doped coherent interface with Sc at S1 site which is occupied by interstitial Cu atoms has very good bonding strength.The electronic structure shows the strong Al—Cu bonds at the interfaces with Sc at S1 site,and the Al—Al bonds at the interfaces with Sc at S2 site are formed.The formation of strong Al—Cu and Al—Al bonds plays an important role in the enhancement of doped interface strength.展开更多
Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile memory.But this memory suffers from large dispersion of resistive switching parameters due to the int...Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile memory.But this memory suffers from large dispersion of resistive switching parameters due to the intrinsic randomness of the conductive filament. In this work, we have proposed a self-doping approach to improve the resistive switching characteristics. The fabricated Pt/HfO_2:Cu/Cu device shows outstanding nonvolatile memory properties, including high uniformity, good endurance, long retention and fast switching speed. The results demonstrate that the self-doping approach is an effective method to improve the metal-oxide ECM memory performances and the self-doped Pt/HfO_2:Cu/Cu device has high potentiality for the nonvolatile memory applications in the future.展开更多
基金the financia supports from the National Key Research and Development Program of China (No. 2019YFB2006500)the National Natura Science Foundation of China (Nos. 52171024 51771234, 51601228)。
文摘The properties of Sc-dopedθ′(Al_(2)Cu)/Al interface in Al−Cu alloys were investigated by first-principles calculations.Sc-doped semi-coherent and coherentθ′(Al_(2)Cu)/Al interfaces(Sc doped in Al slab(S1 site),Sc doped inθ′slab(S2 site))were modeled based on calculated results and reported experiments.Through the analysis of interfacial bonding strength,it is revealed that the doping of Sc at S1 site can significantly decrease the interface energy and increase the work of adhesion.In particular,the doped coherent interface with Sc at S1 site which is occupied by interstitial Cu atoms has very good bonding strength.The electronic structure shows the strong Al—Cu bonds at the interfaces with Sc at S1 site,and the Al—Al bonds at the interfaces with Sc at S2 site are formed.The formation of strong Al—Cu and Al—Al bonds plays an important role in the enhancement of doped interface strength.
基金supported by the National Natural Science Foundation of China (Grant Nos. 61521064, 61422407, 61474136, 61334007, 61574166, 6127409, 61322408, 61522408, 61574169, 61471377, 61604177 and 61306117)the National High Technology Research Development Program (Grant No. 2014AA032901)+4 种基金Beijing Training Project for the Leading Talents in S&T (Grant No. ljrc201508)NUDT Research Funding Program (Grant No. JC-15-04-02)the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronicsthe Chinese Academy of Sciences, Youth Innovation Promotion Association CAS (Grant No. 2015096)the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201504).
文摘Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile memory.But this memory suffers from large dispersion of resistive switching parameters due to the intrinsic randomness of the conductive filament. In this work, we have proposed a self-doping approach to improve the resistive switching characteristics. The fabricated Pt/HfO_2:Cu/Cu device shows outstanding nonvolatile memory properties, including high uniformity, good endurance, long retention and fast switching speed. The results demonstrate that the self-doping approach is an effective method to improve the metal-oxide ECM memory performances and the self-doped Pt/HfO_2:Cu/Cu device has high potentiality for the nonvolatile memory applications in the future.
