SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electr...SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si—C, Si—N, C—N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.展开更多
The deposition of a Cu seed layer film is investigated by supercritical fluid deposition （SCFD） using H2 as a reducing agent for Bis（2,2,6,6-tetramethyl-3,5- heptanedionato） copper in supercritical CO2 （scCO2）. ...The deposition of a Cu seed layer film is investigated by supercritical fluid deposition （SCFD） using H2 as a reducing agent for Bis（2,2,6,6-tetramethyl-3,5- heptanedionato） copper in supercritical CO2 （scCO2）. The effects of deposition temperature, precursor, and H2 concentration are investigated to optimize Cu deposition. Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2. A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films. For a H2 concentration above 0.56 mol/L, the root-mean-square （RMS） roughness of a Cu film decreases as the H2 concentration increases. Finally, a 20-nm thick Cu film with a smooth surface, which is required as a seed layer in advanced interconnects, is successfully deposited at a high H2 concentration （0.75 tool/L）.展开更多
基金Project(60371046) supported by the National Natural Science Foundation of ChinaProject(713-394201034) supported by the International Cooperant Foundation of Hunan Province, China
文摘SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si—C, Si—N, C—N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 50901086 and 51072118)the Shanghai Shuguang Project,China (Grant No. 09SG46)+2 种基金the Science Foundation for the Excellent Youth Scholars of Shanghai Municipal Education Commission,China (Grant No. slg10032)the Qianjiang Project of Zhejiang Province,China (Grant No. 2010R10047)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry
文摘The deposition of a Cu seed layer film is investigated by supercritical fluid deposition （SCFD） using H2 as a reducing agent for Bis（2,2,6,6-tetramethyl-3,5- heptanedionato） copper in supercritical CO2 （scCO2）. The effects of deposition temperature, precursor, and H2 concentration are investigated to optimize Cu deposition. Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2. A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films. For a H2 concentration above 0.56 mol/L, the root-mean-square （RMS） roughness of a Cu film decreases as the H2 concentration increases. Finally, a 20-nm thick Cu film with a smooth surface, which is required as a seed layer in advanced interconnects, is successfully deposited at a high H2 concentration （0.75 tool/L）.
