采用 LBL(layer- by- layer)法制备了 Cu2 Sn S3 薄膜。即首先采用电化学方法在 Sn O2 衬底上制备 Sn S薄膜 ,然后又在其上用化学沉积法制备 Cu S薄膜 ,最后进行退火处理得到厚度约为960 nm的 Cu2 Sn S3 薄膜。探讨了薄膜的制备机理、...采用 LBL(layer- by- layer)法制备了 Cu2 Sn S3 薄膜。即首先采用电化学方法在 Sn O2 衬底上制备 Sn S薄膜 ,然后又在其上用化学沉积法制备 Cu S薄膜 ,最后进行退火处理得到厚度约为960 nm的 Cu2 Sn S3 薄膜。探讨了薄膜的制备机理、生长速度、结构和光学特性。制备的薄膜为多晶(Cu2 Sn S3 ) 72 z(三斜或假单斜晶系 )结构 ,其直接光学带隙约为 1 .0 5 e V。展开更多
文中采用修正的嵌入原子势函数(modified embedded atomic method,MEAM)的分子动力学模拟,研究了无铅焊点中Cu_3Sn/Cu界面元素的扩散过程,对界面元素的扩散行为进行了分析计算,获得了界面各元素的扩散激活能,根据元素扩散的经验公式得...文中采用修正的嵌入原子势函数(modified embedded atomic method,MEAM)的分子动力学模拟,研究了无铅焊点中Cu_3Sn/Cu界面元素的扩散过程,对界面元素的扩散行为进行了分析计算,获得了界面各元素的扩散激活能,根据元素扩散的经验公式得出界面过渡区的厚度表达式.结果表明,扩散过程中主要是铜晶格中Cu原子向Cu_3Sn晶格中扩散.其中,铜晶格内原子以较慢的速率扩散,但可以深入Cu_3Sn晶格内部,Cu_3Sn中原子以较快的速率扩散,但难以进入铜晶格内部.结合阿伦尼乌斯关系和爱因斯坦扩散定律,计算得到界面处铜晶格原子的扩散激活能为172.76 k J/mol,界面处Cu_3Sn晶格中Cu原子扩散激活能为52.48 k J/mol,Sn原子扩散激活能为77.86 k J/mol.展开更多
The Cu2ZnSnS4 thin film was prepared by a facile solution method without vacuum environment and toxic substance. The formation mechanism of the film was studied by transmission electron microscopy (TEM), X-ray diffrac...The Cu2ZnSnS4 thin film was prepared by a facile solution method without vacuum environment and toxic substance. The formation mechanism of the film was studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and Raman scattering measurements. Through cyclic voltammetry and photo-electricity tests, the electrocatalytic activity of the prepared film as the counter electrode of dye-sensitizedsolar cell was also studied. The results show that the mixed precursor solution mainly consists of Cu2SnS3 nanoparticles and Zn ions.After 550 °C annealing process on the precursor film prepared from the mixed solution, Cu2ZnSnS4 thin film is obtained. Besides, itis found that the prepared Cu2ZnSnS4 thin film has the electrocatalytic activity toward the redox reaction of I3?/I? and the dye-sensitized solar cell with the prepared Cu2ZnSnS4 thin film as the counter electrode achieves the efficiency of 1.09%.展开更多
文摘采用 LBL(layer- by- layer)法制备了 Cu2 Sn S3 薄膜。即首先采用电化学方法在 Sn O2 衬底上制备 Sn S薄膜 ,然后又在其上用化学沉积法制备 Cu S薄膜 ,最后进行退火处理得到厚度约为960 nm的 Cu2 Sn S3 薄膜。探讨了薄膜的制备机理、生长速度、结构和光学特性。制备的薄膜为多晶(Cu2 Sn S3 ) 72 z(三斜或假单斜晶系 )结构 ,其直接光学带隙约为 1 .0 5 e V。
文摘文中采用修正的嵌入原子势函数(modified embedded atomic method,MEAM)的分子动力学模拟,研究了无铅焊点中Cu_3Sn/Cu界面元素的扩散过程,对界面元素的扩散行为进行了分析计算,获得了界面各元素的扩散激活能,根据元素扩散的经验公式得出界面过渡区的厚度表达式.结果表明,扩散过程中主要是铜晶格中Cu原子向Cu_3Sn晶格中扩散.其中,铜晶格内原子以较慢的速率扩散,但可以深入Cu_3Sn晶格内部,Cu_3Sn中原子以较快的速率扩散,但难以进入铜晶格内部.结合阿伦尼乌斯关系和爱因斯坦扩散定律,计算得到界面处铜晶格原子的扩散激活能为172.76 k J/mol,界面处Cu_3Sn晶格中Cu原子扩散激活能为52.48 k J/mol,Sn原子扩散激活能为77.86 k J/mol.
基金Projects(51204214,51272292,51222403)supported by the National Natural Science Foundation of China
文摘The Cu2ZnSnS4 thin film was prepared by a facile solution method without vacuum environment and toxic substance. The formation mechanism of the film was studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and Raman scattering measurements. Through cyclic voltammetry and photo-electricity tests, the electrocatalytic activity of the prepared film as the counter electrode of dye-sensitizedsolar cell was also studied. The results show that the mixed precursor solution mainly consists of Cu2SnS3 nanoparticles and Zn ions.After 550 °C annealing process on the precursor film prepared from the mixed solution, Cu2ZnSnS4 thin film is obtained. Besides, itis found that the prepared Cu2ZnSnS4 thin film has the electrocatalytic activity toward the redox reaction of I3?/I? and the dye-sensitized solar cell with the prepared Cu2ZnSnS4 thin film as the counter electrode achieves the efficiency of 1.09%.
